Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate

P. F. Tian, E. Y. Xie, Z. Gong, Z. Z. Chen, T. J. Yu, Y. J. Sun, S. L. Qi, Y. J. Chen, Y. F. Zhang, S. Calvez, Erdan Gu, Guoyi Zhang, Martin Dawson

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

4 Citations (Scopus)

Abstract

By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.
Original languageEnglish
Title of host publicationProceedings of the 2011 IEEE Photonics Conference
Place of PublicationNew York
PublisherIEEE
Pages551-552
Number of pages2
ISBN (Print)9781424489404
DOIs
Publication statusPublished - Oct 2011
Event24th Annual Meeting of the IEEE Photonics Society - Arlington, United States
Duration: 9 Oct 201113 Oct 2011

Conference

Conference24th Annual Meeting of the IEEE Photonics Society
CountryUnited States
CityArlington
Period9/10/1113/10/11

    Fingerprint

Keywords

  • GaN
  • AuSn
  • vertical structure LEDs
  • LEDS
  • flexible optoelectronics
  • bonding
  • Substrates
  • Optical imaging
  • optical device fabrication
  • light emitting diodes
  • gold
  • flexible vertical structure
  • GaN-based light emitting diodes

Cite this

Tian, P. F., Xie, E. Y., Gong, Z., Chen, Z. Z., Yu, T. J., Sun, Y. J., ... Dawson, M. (2011). Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate. In Proceedings of the 2011 IEEE Photonics Conference (pp. 551-552). New York: IEEE. https://doi.org/10.1109/PHO.2011.6110666