Abstract
By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.
Original language | English |
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Title of host publication | Proceedings of the 2011 IEEE Photonics Conference |
Place of Publication | New York |
Publisher | IEEE |
Pages | 551-552 |
Number of pages | 2 |
ISBN (Print) | 9781424489404 |
DOIs | |
Publication status | Published - Oct 2011 |
Event | 24th Annual Meeting of the IEEE Photonics Society - Arlington, United States Duration: 9 Oct 2011 → 13 Oct 2011 |
Conference
Conference | 24th Annual Meeting of the IEEE Photonics Society |
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Country | United States |
City | Arlington |
Period | 9/10/11 → 13/10/11 |
Keywords
- GaN
- AuSn
- vertical structure LEDs
- LEDS
- flexible optoelectronics
- bonding
- Substrates
- Optical imaging
- optical device fabrication
- light emitting diodes
- gold
- flexible vertical structure
- GaN-based light emitting diodes