Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate

P. F. Tian, E. Y. Xie, Z. Gong, Z. Z. Chen, T. J. Yu, Y. J. Sun, S. L. Qi, Y. J. Chen, Y. F. Zhang, S. Calvez, Erdan Gu, Guoyi Zhang, Martin Dawson

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

4 Citations (Scopus)

Abstract

By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.
LanguageEnglish
Title of host publicationProceedings of the 2011 IEEE Photonics Conference
Place of PublicationNew York
PublisherIEEE
Pages551-552
Number of pages2
ISBN (Print)9781424489404
DOIs
Publication statusPublished - Oct 2011
Event24th Annual Meeting of the IEEE Photonics Society - Arlington, United States
Duration: 9 Oct 201113 Oct 2011

Conference

Conference24th Annual Meeting of the IEEE Photonics Society
CountryUnited States
CityArlington
Period9/10/1113/10/11

Fingerprint

light emitting diodes
metal bonding
radii
lasers

Keywords

  • GaN
  • AuSn
  • vertical structure LEDs
  • LEDS
  • flexible optoelectronics
  • bonding
  • Substrates
  • Optical imaging
  • optical device fabrication
  • light emitting diodes
  • gold
  • flexible vertical structure
  • GaN-based light emitting diodes

Cite this

Tian, P. F., Xie, E. Y., Gong, Z., Chen, Z. Z., Yu, T. J., Sun, Y. J., ... Dawson, M. (2011). Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate. In Proceedings of the 2011 IEEE Photonics Conference (pp. 551-552). New York: IEEE. https://doi.org/10.1109/PHO.2011.6110666
Tian, P. F. ; Xie, E. Y. ; Gong, Z. ; Chen, Z. Z. ; Yu, T. J. ; Sun, Y. J. ; Qi, S. L. ; Chen, Y. J. ; Zhang, Y. F. ; Calvez, S. ; Gu, Erdan ; Zhang, Guoyi ; Dawson, Martin. / Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate. Proceedings of the 2011 IEEE Photonics Conference. New York : IEEE, 2011. pp. 551-552
@inproceedings{227201e9b4ce4435b6f729742268ca95,
title = "Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate",
abstract = "By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.",
keywords = "GaN, AuSn, vertical structure LEDs, LEDS, flexible optoelectronics, bonding, Substrates , Optical imaging , optical device fabrication, light emitting diodes , gold, flexible vertical structure , GaN-based light emitting diodes",
author = "Tian, {P. F.} and Xie, {E. Y.} and Z. Gong and Chen, {Z. Z.} and Yu, {T. J.} and Sun, {Y. J.} and Qi, {S. L.} and Chen, {Y. J.} and Zhang, {Y. F.} and S. Calvez and Erdan Gu and Guoyi Zhang and Martin Dawson",
year = "2011",
month = "10",
doi = "10.1109/PHO.2011.6110666",
language = "English",
isbn = "9781424489404",
pages = "551--552",
booktitle = "Proceedings of the 2011 IEEE Photonics Conference",
publisher = "IEEE",

}

Tian, PF, Xie, EY, Gong, Z, Chen, ZZ, Yu, TJ, Sun, YJ, Qi, SL, Chen, YJ, Zhang, YF, Calvez, S, Gu, E, Zhang, G & Dawson, M 2011, Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate. in Proceedings of the 2011 IEEE Photonics Conference. IEEE, New York, pp. 551-552, 24th Annual Meeting of the IEEE Photonics Society, Arlington, United States, 9/10/11. https://doi.org/10.1109/PHO.2011.6110666

Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate. / Tian, P. F.; Xie, E. Y.; Gong, Z.; Chen, Z. Z.; Yu, T. J.; Sun, Y. J.; Qi, S. L.; Chen, Y. J.; Zhang, Y. F.; Calvez, S.; Gu, Erdan; Zhang, Guoyi; Dawson, Martin.

Proceedings of the 2011 IEEE Photonics Conference. New York : IEEE, 2011. p. 551-552.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate

AU - Tian, P. F.

AU - Xie, E. Y.

AU - Gong, Z.

AU - Chen, Z. Z.

AU - Yu, T. J.

AU - Sun, Y. J.

AU - Qi, S. L.

AU - Chen, Y. J.

AU - Zhang, Y. F.

AU - Calvez, S.

AU - Gu, Erdan

AU - Zhang, Guoyi

AU - Dawson, Martin

PY - 2011/10

Y1 - 2011/10

N2 - By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.

AB - By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.

KW - GaN

KW - AuSn

KW - vertical structure LEDs

KW - LEDS

KW - flexible optoelectronics

KW - bonding

KW - Substrates

KW - Optical imaging

KW - optical device fabrication

KW - light emitting diodes

KW - gold

KW - flexible vertical structure

KW - GaN-based light emitting diodes

UR - http://www.scopus.com/inward/record.url?scp=84862956092&partnerID=8YFLogxK

U2 - 10.1109/PHO.2011.6110666

DO - 10.1109/PHO.2011.6110666

M3 - Conference contribution book

SN - 9781424489404

SP - 551

EP - 552

BT - Proceedings of the 2011 IEEE Photonics Conference

PB - IEEE

CY - New York

ER -

Tian PF, Xie EY, Gong Z, Chen ZZ, Yu TJ, Sun YJ et al. Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate. In Proceedings of the 2011 IEEE Photonics Conference. New York: IEEE. 2011. p. 551-552 https://doi.org/10.1109/PHO.2011.6110666