Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate

P. F. Tian; E. Y. Xie; Z. Gong; Z. Z. Chen; T. J. Yu; Y. J. Sun; S. L. Qi; Y. J. Chen; Y. F. Zhang; S. Calvez; Erdan Gu; Guoyi Zhang; Martin Dawson

doi:10.1109/PHO.2011.6110666

Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate

P. F. Tian, E. Y. Xie, Z. Gong, Z. Z. Chen, T. J. Yu, Y. J. Sun, S. L. Qi, Y. J. Chen, Y. F. Zhang, S. Calvez, Erdan Gu, Guoyi Zhang, Martin Dawson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

5 Citations (Scopus)

Abstract

By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.

Original language	English
Title of host publication	Proceedings of the 2011 IEEE Photonics Conference
Place of Publication	New York
Publisher	IEEE
Pages	551-552
Number of pages	2
ISBN (Print)	9781424489404
DOIs	https://doi.org/10.1109/PHO.2011.6110666
Publication status	Published - Oct 2011
Event	24th Annual Meeting of the IEEE Photonics Society - Arlington, United States Duration: 9 Oct 2011 → 13 Oct 2011

Conference

Conference	24th Annual Meeting of the IEEE Photonics Society
Country/Territory	United States
City	Arlington
Period	9/10/11 → 13/10/11

Keywords

GaN
AuSn
vertical structure LEDs
LEDS
flexible optoelectronics
bonding
Substrates
Optical imaging
optical device fabrication
light emitting diodes
gold
flexible vertical structure
GaN-based light emitting diodes

Access to Document

10.1109/PHO.2011.6110666

Cite this

@inproceedings{227201e9b4ce4435b6f729742268ca95,

title = "Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate",

abstract = "By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.",

keywords = "GaN, AuSn, vertical structure LEDs, LEDS, flexible optoelectronics, bonding, Substrates , Optical imaging , optical device fabrication, light emitting diodes , gold, flexible vertical structure , GaN-based light emitting diodes ",

author = "Tian, {P. F.} and Xie, {E. Y.} and Z. Gong and Chen, {Z. Z.} and Yu, {T. J.} and Sun, {Y. J.} and Qi, {S. L.} and Chen, {Y. J.} and Zhang, {Y. F.} and S. Calvez and Erdan Gu and Guoyi Zhang and Martin Dawson",

year = "2011",

month = oct,

doi = "10.1109/PHO.2011.6110666",

language = "English",

isbn = "9781424489404",

pages = "551--552",

booktitle = "Proceedings of the 2011 IEEE Photonics Conference",

publisher = "IEEE",

note = "24th Annual Meeting of the IEEE Photonics Society ; Conference date: 09-10-2011 Through 13-10-2011",

}

Tian, PF, Xie, EY, Gong, Z, Chen, ZZ, Yu, TJ, Sun, YJ, Qi, SL, Chen, YJ, Zhang, YF, Calvez, S, Gu, E, Zhang, G & Dawson, M 2011, Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate. in Proceedings of the 2011 IEEE Photonics Conference. IEEE, New York, pp. 551-552, 24th Annual Meeting of the IEEE Photonics Society, Arlington, United States, 9/10/11. https://doi.org/10.1109/PHO.2011.6110666

TY - GEN

T1 - Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate

AU - Tian, P. F.

AU - Xie, E. Y.

AU - Gong, Z.

AU - Chen, Z. Z.

AU - Yu, T. J.

AU - Sun, Y. J.

AU - Qi, S. L.

AU - Chen, Y. J.

AU - Zhang, Y. F.

AU - Calvez, S.

AU - Gu, Erdan

AU - Zhang, Guoyi

AU - Dawson, Martin

PY - 2011/10

Y1 - 2011/10

N2 - By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.

AB - By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.

KW - GaN

KW - AuSn

KW - vertical structure LEDs

KW - LEDS

KW - flexible optoelectronics

KW - bonding

KW - Substrates

KW - Optical imaging

KW - optical device fabrication

KW - light emitting diodes

KW - gold

KW - flexible vertical structure

KW - GaN-based light emitting diodes

UR - http://www.scopus.com/inward/record.url?scp=84862956092&partnerID=8YFLogxK

U2 - 10.1109/PHO.2011.6110666

DO - 10.1109/PHO.2011.6110666

M3 - Conference contribution book

SN - 9781424489404

SP - 551

EP - 552

BT - Proceedings of the 2011 IEEE Photonics Conference

PB - IEEE

CY - New York

T2 - 24th Annual Meeting of the IEEE Photonics Society

Y2 - 9 October 2011 through 13 October 2011

ER -

Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate

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Conference

Keywords

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