Abstract
| Language | English |
|---|---|
| Title of host publication | 2015 IEEE Energy Conversion Congress and Exposition (ECCE) |
| Place of Publication | Piscataway, N.J. |
| Publisher | IEEE |
| ISBN (Print) | 978-1-4673-7151-3 |
| DOIs | |
| Publication status | Published - 24 Sep 2015 |
| Externally published | Yes |
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Keywords
- MOSFET
- switching loss
- capacitance
Cite this
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Figure of merit for selecting super-Junction MOSFETs in high efficiency voltage source converters. / Hopkins, Andrew; McNeill, Neville; Anthony, Philip; Mellor, Philip.
2015 IEEE Energy Conversion Congress and Exposition (ECCE). Piscataway, N.J. : IEEE, 2015.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book
TY - GEN
T1 - Figure of merit for selecting super-Junction MOSFETs in high efficiency voltage source converters
AU - Hopkins, Andrew
AU - McNeill, Neville
AU - Anthony, Philip
AU - Mellor, Philip
PY - 2015/9/24
Y1 - 2015/9/24
N2 - Silicon super-junction MOSFETs have very low on-state resistances and fast switching characteristics. However, their use in voltage-source converters is hindered by the poor reverse recovery performance of their body drain diode and an adverse output capacitance characteristic. These both act to increase the overall switching loss. The on-state resistance and output capacitance characteristics of super junction devices are both related to the area of the silicon die. As this increases, the on-state resistance decreases but the output capacitance increases. A figure of merit is evaluated with both predicted and experimental results using a 400-V, DC-DC synchronous buck-converter operating over a range of output currents and switching frequencies.
AB - Silicon super-junction MOSFETs have very low on-state resistances and fast switching characteristics. However, their use in voltage-source converters is hindered by the poor reverse recovery performance of their body drain diode and an adverse output capacitance characteristic. These both act to increase the overall switching loss. The on-state resistance and output capacitance characteristics of super junction devices are both related to the area of the silicon die. As this increases, the on-state resistance decreases but the output capacitance increases. A figure of merit is evaluated with both predicted and experimental results using a 400-V, DC-DC synchronous buck-converter operating over a range of output currents and switching frequencies.
KW - MOSFET
KW - switching loss
KW - capacitance
UR - http://ieeexplore.ieee.org/document/7310195/
U2 - 10.1109/ECCE.2015.7310195
DO - 10.1109/ECCE.2015.7310195
M3 - Conference contribution book
SN - 978-1-4673-7151-3
BT - 2015 IEEE Energy Conversion Congress and Exposition (ECCE)
PB - IEEE
CY - Piscataway, N.J.
ER -