Figure of merit for selecting super-Junction MOSFETs in high efficiency voltage source converters

Andrew Hopkins; Neville McNeill; Philip Anthony; Philip Mellor

doi:10.1109/ECCE.2015.7310195

Figure of merit for selecting super-Junction MOSFETs in high efficiency voltage source converters

Andrew Hopkins, Neville McNeill, Philip Anthony, Philip Mellor

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

10 Citations (Scopus)

Abstract

Silicon super-junction MOSFETs have very low on-state resistances and fast switching characteristics. However, their use in voltage-source converters is hindered by the poor reverse recovery performance of their body drain diode and an adverse output capacitance characteristic. These both act to increase the overall switching loss. The on-state resistance and output capacitance characteristics of super junction devices are both related to the area of the silicon die. As this increases, the on-state resistance decreases but the output capacitance increases. A figure of merit is evaluated with both predicted and experimental results using a 400-V, DC-DC synchronous buck-converter operating over a range of output currents and switching frequencies.

Original language	English
Title of host publication	2015 IEEE Energy Conversion Congress and Exposition (ECCE)
Place of Publication	Piscataway, N.J.
Publisher	IEEE
ISBN (Print)	978-1-4673-7151-3
DOIs	https://doi.org/10.1109/ECCE.2015.7310195
Publication status	Published - 24 Sep 2015
Externally published	Yes

Keywords

MOSFET
switching loss
capacitance

Access to Document

10.1109/ECCE.2015.7310195

Cite this

@inproceedings{041749d9288947ba91192bdd4b31fc31,

title = "Figure of merit for selecting super-Junction MOSFETs in high efficiency voltage source converters",

abstract = "Silicon super-junction MOSFETs have very low on-state resistances and fast switching characteristics. However, their use in voltage-source converters is hindered by the poor reverse recovery performance of their body drain diode and an adverse output capacitance characteristic. These both act to increase the overall switching loss. The on-state resistance and output capacitance characteristics of super junction devices are both related to the area of the silicon die. As this increases, the on-state resistance decreases but the output capacitance increases. A figure of merit is evaluated with both predicted and experimental results using a 400-V, DC-DC synchronous buck-converter operating over a range of output currents and switching frequencies.",

keywords = "MOSFET, switching loss, capacitance",

author = "Andrew Hopkins and Neville McNeill and Philip Anthony and Philip Mellor",

year = "2015",

month = sep,

day = "24",

doi = "10.1109/ECCE.2015.7310195",

language = "English",

isbn = "978-1-4673-7151-3",

booktitle = "2015 IEEE Energy Conversion Congress and Exposition (ECCE)",

publisher = "IEEE",

}

TY - GEN

T1 - Figure of merit for selecting super-Junction MOSFETs in high efficiency voltage source converters

AU - Hopkins, Andrew

AU - McNeill, Neville

AU - Anthony, Philip

AU - Mellor, Philip

PY - 2015/9/24

Y1 - 2015/9/24

N2 - Silicon super-junction MOSFETs have very low on-state resistances and fast switching characteristics. However, their use in voltage-source converters is hindered by the poor reverse recovery performance of their body drain diode and an adverse output capacitance characteristic. These both act to increase the overall switching loss. The on-state resistance and output capacitance characteristics of super junction devices are both related to the area of the silicon die. As this increases, the on-state resistance decreases but the output capacitance increases. A figure of merit is evaluated with both predicted and experimental results using a 400-V, DC-DC synchronous buck-converter operating over a range of output currents and switching frequencies.

AB - Silicon super-junction MOSFETs have very low on-state resistances and fast switching characteristics. However, their use in voltage-source converters is hindered by the poor reverse recovery performance of their body drain diode and an adverse output capacitance characteristic. These both act to increase the overall switching loss. The on-state resistance and output capacitance characteristics of super junction devices are both related to the area of the silicon die. As this increases, the on-state resistance decreases but the output capacitance increases. A figure of merit is evaluated with both predicted and experimental results using a 400-V, DC-DC synchronous buck-converter operating over a range of output currents and switching frequencies.

KW - MOSFET

KW - switching loss

KW - capacitance

UR - http://ieeexplore.ieee.org/document/7310195/

U2 - 10.1109/ECCE.2015.7310195

DO - 10.1109/ECCE.2015.7310195

M3 - Conference contribution book

SN - 978-1-4673-7151-3

BT - 2015 IEEE Energy Conversion Congress and Exposition (ECCE)

PB - IEEE

CY - Piscataway, N.J.

ER -

Figure of merit for selecting super-Junction MOSFETs in high efficiency voltage source converters

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this