The present study reports for the first time the influence of stoichiometry of SnO2 nanoparticles synthesized in the gas phase at atmospheric pressure towards the field effect behaviour. The field effect was measured by using the nanoparticles as active material in a transistor channel. The transistors fabricated from the stoichiometric SnO2 nanoparticles (∼20 nm) obtained by post-deposition low-temperature (300 °C) oxidation of the SnO nanoparticles clearly demonstrate n-type behaviour in contrast to the high electrical conductance exhibited by the non-stoichiometric SnOx nanoparticles obtained by high temperature (650 °C) in-flight oxidation. X-ray Photoelectron Spectroscopy (XPS) studies confirm the stoichiometry of the in-flight as well as the post-oxidized nanoparticles.
|Number of pages||6|
|Journal||Physica E: Low-dimensional Systems and Nanostructures|
|Publication status||Published - 31 Jul 2010|
- field effect transistor
- gas phase synthesis
- x-ray photoelectron spectroscopy