Field effects on SnOx and SnO2 nanoparticles synthesized in the gas phase

Dibakar Roy Chowdhury, Aruna Ivaturi, Aleksandar Nedic, Frank Einar Kruis, Roland Schmechel

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The present study reports for the first time the influence of stoichiometry of SnO2 nanoparticles synthesized in the gas phase at atmospheric pressure towards the field effect behaviour. The field effect was measured by using the nanoparticles as active material in a transistor channel. The transistors fabricated from the stoichiometric SnO2 nanoparticles (∼20 nm) obtained by post-deposition low-temperature (300 °C) oxidation of the SnO nanoparticles clearly demonstrate n-type behaviour in contrast to the high electrical conductance exhibited by the non-stoichiometric SnOx nanoparticles obtained by high temperature (650 °C) in-flight oxidation. X-ray Photoelectron Spectroscopy (XPS) studies confirm the stoichiometry of the in-flight as well as the post-oxidized nanoparticles.

Original languageEnglish
Pages (from-to)2471-2476
Number of pages6
JournalPhysica E: Low-dimensional Systems and Nanostructures
Volume42
Issue number9
DOIs
Publication statusPublished - 31 Jul 2010
Externally publishedYes

Keywords

  • field effect transistor
  • gas phase synthesis
  • nanoparticle
  • stoichiometry
  • x-ray photoelectron spectroscopy

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