Field-effect mobility of amorphous silicon thin-film transistors under strain

H. Gleskova, P. I. Hsu, Z. Xi, J. C. Sturm, Z. Suo, Sigurd Wagner

Research output: Contribution to journalArticle

55 Citations (Scopus)


We applied strain ranging from 1% compressive to ∼0.3% tensile to a-Si:H TFTs on polyimide foils by bending them inward or outward, or by stretching them in a microstrain tester. We also applied strain to a-Si:H TFTs by deforming a flat substrate into a spherical dome. In each case, compression lowered and tension raised the on-current and hence the electron field-effect mobility. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility. We show that the mobility can be used as an indicator of local mechanical strain.
Original languageEnglish
Pages (from-to)732-735
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue number1 SPEC. ISS.
Publication statusPublished - 15 Jun 2004
Event20th International Conference on Amorphous and Microcrystalline Semiconductors - Campos do Jordão, Brazil
Duration: 25 Aug 200329 Aug 2003


  • silicon thin-film transistors
  • thin-film transistors
  • field-effect mobility

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