Field-effect mobility of amorphous silicon thin-film transistors under strain

H. Gleskova, P. I. Hsu, Z. Xi, J. C. Sturm, Z. Suo, Sigurd Wagner

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

We applied strain ranging from 1% compressive to ∼0.3% tensile to a-Si:H TFTs on polyimide foils by bending them inward or outward, or by stretching them in a microstrain tester. We also applied strain to a-Si:H TFTs by deforming a flat substrate into a spherical dome. In each case, compression lowered and tension raised the on-current and hence the electron field-effect mobility. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility. We show that the mobility can be used as an indicator of local mechanical strain.

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Thin film transistors
Amorphous silicon
amorphous silicon
transistors
thin films
domes
test equipment
electron mobility
polyimides
foils
conduction bands
valence
Electron mobility
Domes
Valence bands
Conduction bands
Polyimides
Metal foil
Stretching
electrons

Keywords

  • silicon thin-film transistors
  • thin-film transistors
  • field-effect mobility

Cite this

Gleskova, H. ; Hsu, P. I. ; Xi, Z. ; Sturm, J. C. ; Suo, Z. ; Wagner, Sigurd . / Field-effect mobility of amorphous silicon thin-film transistors under strain. In: Journal of Non-Crystalline Solids. 2004 ; Vol. 338-340, No. 1 SPEC. ISS. pp. 732-735.
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Field-effect mobility of amorphous silicon thin-film transistors under strain. / Gleskova, H.; Hsu, P. I.; Xi, Z.; Sturm, J. C.; Suo, Z.; Wagner, Sigurd .

In: Journal of Non-Crystalline Solids, Vol. 338-340, No. 1 SPEC. ISS., 15.06.2004, p. 732-735.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Field-effect mobility of amorphous silicon thin-film transistors under strain

AU - Gleskova, H.

AU - Hsu, P. I.

AU - Xi, Z.

AU - Sturm, J. C.

AU - Suo, Z.

AU - Wagner, Sigurd

PY - 2004/6/15

Y1 - 2004/6/15

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AB - We applied strain ranging from 1% compressive to ∼0.3% tensile to a-Si:H TFTs on polyimide foils by bending them inward or outward, or by stretching them in a microstrain tester. We also applied strain to a-Si:H TFTs by deforming a flat substrate into a spherical dome. In each case, compression lowered and tension raised the on-current and hence the electron field-effect mobility. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility. We show that the mobility can be used as an indicator of local mechanical strain.

KW - silicon thin-film transistors

KW - thin-film transistors

KW - field-effect mobility

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