FET based nano-pore sensing: a 3D simulation study

I. Moore, C. Millar, S. Roy, A. Asenov

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report the development and testing of simulation software, which, combining self-consistent Brownian dynamics and Drift Diffusion simulation techniques in a single simulation domain allows the simulation of the effect of ions and charged molecules on the current flowing through a sensing FET. For sensory applications an aqueous solution is introduced above the transistor gate dielectric and the effect of fixed charges on the transistor current is investigated. We significantly extend previous work (Moore et al. in Proceedings of the 11th International Conference on Ultimate Integration on Silicon, pp. 85-88, 2010) by analysing the effects of mobile ions on the system and introduce an initial analysis of the noise associated with the Brownian motion of mobile ions in the solution in order to determine the sensitivity of the FET in measuring the position and number of ions. Finally, results are presented showing the sensitivity of the drain current to the movement of a single ion through a nano-pore.

LanguageEnglish
Pages266-271
Number of pages6
JournalJournal of Computational Electronics
Volume11
Issue number3
Early online date26 May 2012
DOIs
Publication statusPublished - 30 Sep 2012

Fingerprint

Nanopore
Field effect transistors
Sensing
Simulation Study
Ions
Drift-diffusion
Brownian Dynamics
Simulation
Simulation Software
Transistors
Brownian motion
Silicon
Charge
Molecules
Brownian movement
Gate dielectrics
Drain current
Testing

Keywords

  • biological sensors
  • device modeling
  • MOSFETs
  • nano-pore
  • semiconductor devices

Cite this

Moore, I. ; Millar, C. ; Roy, S. ; Asenov, A. / FET based nano-pore sensing : a 3D simulation study. 2012 ; Vol. 11, No. 3. pp. 266-271.
@article{2cae4c87bd654b948d21b9ae1765d101,
title = "FET based nano-pore sensing: a 3D simulation study",
abstract = "We report the development and testing of simulation software, which, combining self-consistent Brownian dynamics and Drift Diffusion simulation techniques in a single simulation domain allows the simulation of the effect of ions and charged molecules on the current flowing through a sensing FET. For sensory applications an aqueous solution is introduced above the transistor gate dielectric and the effect of fixed charges on the transistor current is investigated. We significantly extend previous work (Moore et al. in Proceedings of the 11th International Conference on Ultimate Integration on Silicon, pp. 85-88, 2010) by analysing the effects of mobile ions on the system and introduce an initial analysis of the noise associated with the Brownian motion of mobile ions in the solution in order to determine the sensitivity of the FET in measuring the position and number of ions. Finally, results are presented showing the sensitivity of the drain current to the movement of a single ion through a nano-pore.",
keywords = "biological sensors, device modeling, MOSFETs, nano-pore, semiconductor devices",
author = "I. Moore and C. Millar and S. Roy and A. Asenov",
year = "2012",
month = "9",
day = "30",
doi = "10.1007/s10825-012-0405-z",
language = "English",
volume = "11",
pages = "266--271",
number = "3",

}

Moore, I, Millar, C, Roy, S & Asenov, A 2012, 'FET based nano-pore sensing: a 3D simulation study' vol. 11, no. 3, pp. 266-271. https://doi.org/10.1007/s10825-012-0405-z

FET based nano-pore sensing : a 3D simulation study. / Moore, I.; Millar, C.; Roy, S.; Asenov, A.

Vol. 11, No. 3, 30.09.2012, p. 266-271.

Research output: Contribution to journalArticle

TY - JOUR

T1 - FET based nano-pore sensing

T2 - a 3D simulation study

AU - Moore, I.

AU - Millar, C.

AU - Roy, S.

AU - Asenov, A.

PY - 2012/9/30

Y1 - 2012/9/30

N2 - We report the development and testing of simulation software, which, combining self-consistent Brownian dynamics and Drift Diffusion simulation techniques in a single simulation domain allows the simulation of the effect of ions and charged molecules on the current flowing through a sensing FET. For sensory applications an aqueous solution is introduced above the transistor gate dielectric and the effect of fixed charges on the transistor current is investigated. We significantly extend previous work (Moore et al. in Proceedings of the 11th International Conference on Ultimate Integration on Silicon, pp. 85-88, 2010) by analysing the effects of mobile ions on the system and introduce an initial analysis of the noise associated with the Brownian motion of mobile ions in the solution in order to determine the sensitivity of the FET in measuring the position and number of ions. Finally, results are presented showing the sensitivity of the drain current to the movement of a single ion through a nano-pore.

AB - We report the development and testing of simulation software, which, combining self-consistent Brownian dynamics and Drift Diffusion simulation techniques in a single simulation domain allows the simulation of the effect of ions and charged molecules on the current flowing through a sensing FET. For sensory applications an aqueous solution is introduced above the transistor gate dielectric and the effect of fixed charges on the transistor current is investigated. We significantly extend previous work (Moore et al. in Proceedings of the 11th International Conference on Ultimate Integration on Silicon, pp. 85-88, 2010) by analysing the effects of mobile ions on the system and introduce an initial analysis of the noise associated with the Brownian motion of mobile ions in the solution in order to determine the sensitivity of the FET in measuring the position and number of ions. Finally, results are presented showing the sensitivity of the drain current to the movement of a single ion through a nano-pore.

KW - biological sensors

KW - device modeling

KW - MOSFETs

KW - nano-pore

KW - semiconductor devices

UR - http://www.scopus.com/inward/record.url?scp=84871871272&partnerID=8YFLogxK

U2 - 10.1007/s10825-012-0405-z

DO - 10.1007/s10825-012-0405-z

M3 - Article

VL - 11

SP - 266

EP - 271

IS - 3

ER -