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Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM

  • N.K. Metzger
  • , C.G. Leburn
  • , A.A. Lagatsky
  • , C.T.A. Brown
  • , S. Calvez
  • , D. Burns
  • , H.D. Sun
  • , M.D. Dawson
  • , J.C. Harmand
  • , W. Sibbett

Research output: Contribution to journalArticlepeer-review

Abstract

The operation of a femtosecond Cr4+:YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230fs pulses centred at 1528nm were generated at an average output power of 280mW. The SESAM exhibited a low saturation fluence of 10μJ/cm2 and a short recovery time of 12ps.
Original languageEnglish
Pages (from-to)18739-18744
Number of pages6
JournalOptics Express
Volume16
Issue number23
DOIs
Publication statusPublished - 29 Oct 2008

Keywords

  • solid-state lasers
  • semiconductor saturable-absorber
  • mode-locking
  • femtosecond pulse generation

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