Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM

N.K. Metzger, C.G. Leburn, A.A. Lagatsky, C.T.A. Brown, S. Calvez, D. Burns, H.D. Sun, M.D. Dawson, J.C. Harmand, W. Sibbett

Research output: Contribution to journalArticle

10 Citations (Scopus)


The operation of a femtosecond Cr4+:YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230fs pulses centred at 1528nm were generated at an average output power of 280mW. The SESAM exhibited a low saturation fluence of 10μJ/cm2 and a short recovery time of 12ps.
Original languageEnglish
Pages (from-to)18739-18744
Number of pages6
JournalOptics Express
Issue number23
Publication statusPublished - 29 Oct 2008


  • solid-state lasers
  • semiconductor saturable-absorber
  • mode-locking
  • femtosecond pulse generation

Cite this