Projects per year
The operation of a femtosecond Cr4+:YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230fs pulses centred at 1528nm were generated at an average output power of 280mW. The SESAM exhibited a low saturation fluence of 10μJ/cm2 and a short recovery time of 12ps.
- solid-state lasers
- semiconductor saturable-absorber
- femtosecond pulse generation
Calvez, S., Burns, D. & Dawson, M.
1/09/07 → 30/09/11