Femtosecond laser machining of gallium nitride

T. Kim, H.S. Kim, M. Hetterich, D. Jones, J.M. Girkin, E. Bente, M.D. Dawson

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Ultrashort pulse laser ablation of gallium nitride (GaN) has been studied. Utilizing a 1 kHz femtosecond Ti:sapphire laser with a peak intensity of approximately 10(16) W cm(-2), we have successfully demonstrated controlled ablation of metal organic chemical vapour deposition and hydride vapour phase epitaxy grown GaN. Groove patterns 10-100 mum wide and as deep as 30 mum have been produced both in air and in a vacuum chamber and analyzed by scanning electron microscope and stylus profiling. This approach is demonstrated to be highly suitable for micromachining and controlled definition of features on a tens of micron length scale in materials such as GaN which are resistant to wet chemical etching.
Original languageEnglish
Pages (from-to)262-264
Number of pages3
JournalMaterials Science and Engineering B
Volume82
Issue number1-3
DOIs
Publication statusPublished - 22 May 2001

Keywords

  • laser ablation
  • femtosecond pulse laser
  • gallium nitride

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