Fast high-voltage, high-current switching using stacked IGBTs

Z. Ghasemi, S.J. MacGregor, A.R. Dick, F.A. Tuema

Research output: Contribution to conferencePaper

Abstract

The development of solid-state switches for pulsed power applications has been of considerable interest since high-power semiconductor devices became available. However, the use of solid-state devices in the pulsed power environment has usually been restricted by device limitations in either their voltage/current ratings or their switching speed. The stacking of fast medium-voltage devices, such as IGBTs, to improve the voltage rating, makes solid-state switches a potential substitute for conventional switches such as hard glass tubes, thyratrons and spark gaps.This paper reports on a comparative study into the performance of commercially available 1.2 kV IGBT devices. It has been found that dual degradation of the drainsource voltage can be observed in most of the devices and the reasons for this have been investigated. Further studies have looked at the performance and operation of a high current switch employing fifty 1.2 kV IGBTs in a stacked configuration. Switching times of a few
tens of nanoseconds have been measured for a 10 kV charging voltage switched into a 25 R input impedance Blumlein pulse generator.
LanguageEnglish
Pages1-4
Number of pages4
Publication statusPublished - 2001
Event2001 IEE Symposium on Pulsed Power - London, United Kingdom
Duration: 1 May 20012 May 2001

Conference

Conference2001 IEE Symposium on Pulsed Power
CountryUnited Kingdom
CityLondon
Period1/05/012/05/01

Fingerprint

Insulated gate bipolar transistors (IGBT)
Switches
Electric potential
Thyratrons
Solid state devices
Pulse generators
Electric sparks
Degradation
Glass

Keywords

  • fast
  • high-voltage
  • high current
  • stacked igbt's

Cite this

Ghasemi, Z., MacGregor, S. J., Dick, A. R., & Tuema, F. A. (2001). Fast high-voltage, high-current switching using stacked IGBTs. 1-4. Paper presented at 2001 IEE Symposium on Pulsed Power, London, United Kingdom.
Ghasemi, Z. ; MacGregor, S.J. ; Dick, A.R. ; Tuema, F.A. / Fast high-voltage, high-current switching using stacked IGBTs. Paper presented at 2001 IEE Symposium on Pulsed Power, London, United Kingdom.4 p.
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Ghasemi, Z, MacGregor, SJ, Dick, AR & Tuema, FA 2001, 'Fast high-voltage, high-current switching using stacked IGBTs' Paper presented at 2001 IEE Symposium on Pulsed Power, London, United Kingdom, 1/05/01 - 2/05/01, pp. 1-4.

Fast high-voltage, high-current switching using stacked IGBTs. / Ghasemi, Z.; MacGregor, S.J.; Dick, A.R.; Tuema, F.A.

2001. 1-4 Paper presented at 2001 IEE Symposium on Pulsed Power, London, United Kingdom.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Fast high-voltage, high-current switching using stacked IGBTs

AU - Ghasemi, Z.

AU - MacGregor, S.J.

AU - Dick, A.R.

AU - Tuema, F.A.

PY - 2001

Y1 - 2001

N2 - The development of solid-state switches for pulsed power applications has been of considerable interest since high-power semiconductor devices became available. However, the use of solid-state devices in the pulsed power environment has usually been restricted by device limitations in either their voltage/current ratings or their switching speed. The stacking of fast medium-voltage devices, such as IGBTs, to improve the voltage rating, makes solid-state switches a potential substitute for conventional switches such as hard glass tubes, thyratrons and spark gaps.This paper reports on a comparative study into the performance of commercially available 1.2 kV IGBT devices. It has been found that dual degradation of the drainsource voltage can be observed in most of the devices and the reasons for this have been investigated. Further studies have looked at the performance and operation of a high current switch employing fifty 1.2 kV IGBTs in a stacked configuration. Switching times of a fewtens of nanoseconds have been measured for a 10 kV charging voltage switched into a 25 R input impedance Blumlein pulse generator.

AB - The development of solid-state switches for pulsed power applications has been of considerable interest since high-power semiconductor devices became available. However, the use of solid-state devices in the pulsed power environment has usually been restricted by device limitations in either their voltage/current ratings or their switching speed. The stacking of fast medium-voltage devices, such as IGBTs, to improve the voltage rating, makes solid-state switches a potential substitute for conventional switches such as hard glass tubes, thyratrons and spark gaps.This paper reports on a comparative study into the performance of commercially available 1.2 kV IGBT devices. It has been found that dual degradation of the drainsource voltage can be observed in most of the devices and the reasons for this have been investigated. Further studies have looked at the performance and operation of a high current switch employing fifty 1.2 kV IGBTs in a stacked configuration. Switching times of a fewtens of nanoseconds have been measured for a 10 kV charging voltage switched into a 25 R input impedance Blumlein pulse generator.

KW - fast

KW - high-voltage

KW - high current

KW - stacked igbt's

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Ghasemi Z, MacGregor SJ, Dick AR, Tuema FA. Fast high-voltage, high-current switching using stacked IGBTs. 2001. Paper presented at 2001 IEE Symposium on Pulsed Power, London, United Kingdom.