Failure resistance of amorphous silicon transistors under extreme in-plane strain

H. Gleskova, S. Wagner, Z. Suo

Research output: Contribution to journalArticle

166 Citations (Scopus)

Abstract

We have applied strain on thin-film transistors (TFTs) made of hydrogenated amorphous silicon on polyimide foil. In tension, the amorphous layers of the TFT fail by periodic cracks at a strain of ∼0.5%. In compression, the TFTs do not fail when strained by up to 2%, which is the highest value we can set controllably. The amorphous transistor materials can support such large strains because they lack a mechanism for dislocation motion. While the tensile driving force is sufficient to overcome the resistance to crack formation, the compressive failure mechanism of delamination is not activated because of the large delamination length required between transistor layers and polymer substrate.

LanguageEnglish
Pages3011-3013
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number19
DOIs
Publication statusPublished - 8 Nov 1999

Fingerprint

silicon transistors
plane strain
amorphous silicon
transistors
thin films
crack initiation
polyimides
foils
cracks
polymers

Keywords

  • amorphous silicon transistors
  • transistor layers

Cite this

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Failure resistance of amorphous silicon transistors under extreme in-plane strain. / Gleskova, H.; Wagner, S.; Suo, Z.

In: Applied Physics Letters, Vol. 75, No. 19, 08.11.1999, p. 3011-3013.

Research output: Contribution to journalArticle

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AU - Wagner, S.

AU - Suo, Z.

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