Factors affecting tunable second harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader

A.J. MacLean, Alan Kemp, J.Y. Kim, K.S. Kim, T. Kim, Martin D. Dawson, David Burns

Research output: Contribution to conferencePaper

Abstract

Semiconductor disk lasers have been shown to be a versatile laser technology providing tunable high power operation and good beam quality at wavelengths from 670nm to 2.3pim [1-2]. The addition of a second harmonic generation (SHG) crystal allows this wavelength range to be extended further into the visible, and even into the UV [1]. The limiting factor to the output power of these devices is heating, and two principal techniques have been developed for thermal management. The first is to remove most or all of the substrate, and bond the semiconductor chip to a high thermal conductivity heatsink. The alternative is to use an optical window of high thermal conductivity material bonded to the intracavity surface of the semiconductor chip. Substrate thinning has been very effective in devices around 1 rtm, but at more challenging wavelengths, where the thermal impedance of the semiconductor materials is much greater, the intracavity heatspreader allows heat to be removed over a larger area, improving the efficiency of thermal management (see Figure 1). In order to explore the practicalities of SHG in semiconductor disk lasers with heatspreaders, a test bed system at 1 [tm is used, with the expectation that thermal management and tuning techniques can be transferred to other wavelengths.

Conference

ConferenceEuropean Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference
CityMunich, Germany
Period17/06/0722/06/07

Fingerprint

harmonic generations
diamonds
lasers
wavelengths
chips
test stands
thermal conductivity
tuning
impedance
heat
conductivity
heating
output
crystals

Keywords

  • Semiconductor disk lasers
  • second harmonicgeneration (SHG)

Cite this

MacLean, A. J., Kemp, A., Kim, J. Y., Kim, K. S., Kim, T., Dawson, M. D., & Burns, D. (2007). Factors affecting tunable second harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader. Paper presented at European Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference, Munich, Germany, .
MacLean, A.J. ; Kemp, Alan ; Kim, J.Y. ; Kim, K.S. ; Kim, T. ; Dawson, Martin D. ; Burns, David. / Factors affecting tunable second harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader. Paper presented at European Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference, Munich, Germany, .1 p.
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abstract = "Semiconductor disk lasers have been shown to be a versatile laser technology providing tunable high power operation and good beam quality at wavelengths from 670nm to 2.3pim [1-2]. The addition of a second harmonic generation (SHG) crystal allows this wavelength range to be extended further into the visible, and even into the UV [1]. The limiting factor to the output power of these devices is heating, and two principal techniques have been developed for thermal management. The first is to remove most or all of the substrate, and bond the semiconductor chip to a high thermal conductivity heatsink. The alternative is to use an optical window of high thermal conductivity material bonded to the intracavity surface of the semiconductor chip. Substrate thinning has been very effective in devices around 1 rtm, but at more challenging wavelengths, where the thermal impedance of the semiconductor materials is much greater, the intracavity heatspreader allows heat to be removed over a larger area, improving the efficiency of thermal management (see Figure 1). In order to explore the practicalities of SHG in semiconductor disk lasers with heatspreaders, a test bed system at 1 [tm is used, with the expectation that thermal management and tuning techniques can be transferred to other wavelengths.",
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MacLean, AJ, Kemp, A, Kim, JY, Kim, KS, Kim, T, Dawson, MD & Burns, D 2007, 'Factors affecting tunable second harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader' Paper presented at European Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference, Munich, Germany, 17/06/07 - 22/06/07, .

Factors affecting tunable second harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader. / MacLean, A.J.; Kemp, Alan; Kim, J.Y.; Kim, K.S.; Kim, T.; Dawson, Martin D.; Burns, David.

2007. Paper presented at European Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference, Munich, Germany, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Factors affecting tunable second harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader

AU - MacLean, A.J.

AU - Kemp, Alan

AU - Kim, J.Y.

AU - Kim, K.S.

AU - Kim, T.

AU - Dawson, Martin D.

AU - Burns, David

PY - 2007/6/17

Y1 - 2007/6/17

N2 - Semiconductor disk lasers have been shown to be a versatile laser technology providing tunable high power operation and good beam quality at wavelengths from 670nm to 2.3pim [1-2]. The addition of a second harmonic generation (SHG) crystal allows this wavelength range to be extended further into the visible, and even into the UV [1]. The limiting factor to the output power of these devices is heating, and two principal techniques have been developed for thermal management. The first is to remove most or all of the substrate, and bond the semiconductor chip to a high thermal conductivity heatsink. The alternative is to use an optical window of high thermal conductivity material bonded to the intracavity surface of the semiconductor chip. Substrate thinning has been very effective in devices around 1 rtm, but at more challenging wavelengths, where the thermal impedance of the semiconductor materials is much greater, the intracavity heatspreader allows heat to be removed over a larger area, improving the efficiency of thermal management (see Figure 1). In order to explore the practicalities of SHG in semiconductor disk lasers with heatspreaders, a test bed system at 1 [tm is used, with the expectation that thermal management and tuning techniques can be transferred to other wavelengths.

AB - Semiconductor disk lasers have been shown to be a versatile laser technology providing tunable high power operation and good beam quality at wavelengths from 670nm to 2.3pim [1-2]. The addition of a second harmonic generation (SHG) crystal allows this wavelength range to be extended further into the visible, and even into the UV [1]. The limiting factor to the output power of these devices is heating, and two principal techniques have been developed for thermal management. The first is to remove most or all of the substrate, and bond the semiconductor chip to a high thermal conductivity heatsink. The alternative is to use an optical window of high thermal conductivity material bonded to the intracavity surface of the semiconductor chip. Substrate thinning has been very effective in devices around 1 rtm, but at more challenging wavelengths, where the thermal impedance of the semiconductor materials is much greater, the intracavity heatspreader allows heat to be removed over a larger area, improving the efficiency of thermal management (see Figure 1). In order to explore the practicalities of SHG in semiconductor disk lasers with heatspreaders, a test bed system at 1 [tm is used, with the expectation that thermal management and tuning techniques can be transferred to other wavelengths.

KW - Semiconductor disk lasers

KW - second harmonicgeneration (SHG)

UR - http://dx.doi.org/10.1109/CLEOE-IQEC.2007.4385899

M3 - Paper

ER -

MacLean AJ, Kemp A, Kim JY, Kim KS, Kim T, Dawson MD et al. Factors affecting tunable second harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader. 2007. Paper presented at European Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference, Munich, Germany, .