Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays

E D Le Boulbar, I Gîrgel, C Lewins, P R Edwards, R W Martin, A Satka, D W E Allsopp, P A Shields

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The use of etched nanorods from a planar template as a growth scaffold for a highly regular GaN/InGaN/GaN core-shell structure is demonstrated. The recovery of m-plane non-polar facets from etched high-aspect-ratio GaN nanorods is studied with and without the introduction of a hydrogen silsesquioxane passivation layer at the bottom of the etched nanorod arrays. This layer successfully prevented c-plane growth between the nanorods, resulting in vertical nanorod sidewalls (∼89.8°) and a more regular height distribution than re-growth on unpassivated nanorods. The height variation on passivated nanorods is solely determined by the uniformity of nanorod diameter, which degrades with increased growth duration. Facet-dependent indium incorporation of GaN/InGaN/GaN core-shell layers regrown onto the etched nanorods is observed by high-resolution cathodoluminescence imaging. Sharp features corresponding to diffracted wave-guide modes in angle-resolved photoluminescence measurements are evidence of the uniformity of the full core-shell structure grown on ordered etched nanorods.
LanguageEnglish
Article number094302
Number of pages11
JournalJournal of Applied Physics
Volume114
Early online date3 Sep 2013
DOIs
Publication statusPublished - 2013

Fingerprint

vapor phase epitaxy
nanorods
light emission
flat surfaces
recovery
metals
cathodoluminescence
high aspect ratio
passivity
indium
templates
photoluminescence
high resolution
hydrogen

Keywords

  • facet recovery
  • light emission
  • GaN/InGaN/GaN
  • core-shell structures
  • metal organic vapour phase epitaxy
  • GaN nanorod arrays

Cite this

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abstract = "The use of etched nanorods from a planar template as a growth scaffold for a highly regular GaN/InGaN/GaN core-shell structure is demonstrated. The recovery of m-plane non-polar facets from etched high-aspect-ratio GaN nanorods is studied with and without the introduction of a hydrogen silsesquioxane passivation layer at the bottom of the etched nanorod arrays. This layer successfully prevented c-plane growth between the nanorods, resulting in vertical nanorod sidewalls (∼89.8°) and a more regular height distribution than re-growth on unpassivated nanorods. The height variation on passivated nanorods is solely determined by the uniformity of nanorod diameter, which degrades with increased growth duration. Facet-dependent indium incorporation of GaN/InGaN/GaN core-shell layers regrown onto the etched nanorods is observed by high-resolution cathodoluminescence imaging. Sharp features corresponding to diffracted wave-guide modes in angle-resolved photoluminescence measurements are evidence of the uniformity of the full core-shell structure grown on ordered etched nanorods.",
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Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays. / Le Boulbar, E D; Gîrgel, I; Lewins, C; Edwards, P R; Martin, R W; Satka, A; Allsopp, D W E; Shields, P A.

In: Journal of Applied Physics, Vol. 114, 094302, 2013.

Research output: Contribution to journalArticle

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AU - Le Boulbar, E D

AU - Gîrgel, I

AU - Lewins, C

AU - Edwards, P R

AU - Martin, R W

AU - Satka, A

AU - Allsopp, D W E

AU - Shields, P A

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