We have successfully fabricated two-dimensional InGaN-based 12 × 12 micro-light emitting diode (LED) arrays with individually addressable emitters having diameters of 8 and 12 m. A new planarisation scheme including gap-filling with plasma enhanced chemical vapour deposition (PECVD) SiO2 and a chemical-mechanical polishing process was successfully developed for the electrical isolation of individual diodes. The uniformity of elements within an array was demonstrated through their electroluminescence and I-V characteristics.
|Number of pages||3|
|Journal||Physica Status Solidi A|
|Publication status||Published - Jul 2002|
Jeon, C. W., Kim, K. S., & Dawson, M. D. (2002). Fabrication of two-dimensional InGaN-based micro-LED arrays. Physica Status Solidi A, 192(2), 325-328. https://doi.org/10.1002/1521-396X(200208)192:2<325::AID-PSSA325>3.0.CO;2-Q