Abstract
We have successfully fabricated two-dimensional InGaN-based 12 × 12 micro-light emitting diode (LED) arrays with individually addressable emitters having diameters of 8 and 12 m. A new planarisation scheme including gap-filling with plasma enhanced chemical vapour deposition (PECVD) SiO2 and a chemical-mechanical polishing process was successfully developed for the electrical isolation of individual diodes. The uniformity of elements within an array was demonstrated through their electroluminescence and I-V characteristics.
Original language | English |
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Pages (from-to) | 325-328 |
Number of pages | 3 |
Journal | Physica Status Solidi A |
Volume | 192 |
Issue number | 2 |
DOIs | |
Publication status | Published - Jul 2002 |
Keywords
- plasma
- mechanics
- chemistry