We have successfully fabricated two-dimensional InGaN-based 12 × 12 micro-light emitting diode (LED) arrays with individually addressable emitters having diameters of 8 and 12 m. A new planarisation scheme including gap-filling with plasma enhanced chemical vapour deposition (PECVD) SiO2 and a chemical-mechanical polishing process was successfully developed for the electrical isolation of individual diodes. The uniformity of elements within an array was demonstrated through their electroluminescence and I-V characteristics.
|Number of pages||3|
|Journal||Physica Status Solidi A|
|Publication status||Published - Jul 2002|