Fabrication of single-step novel synthesis of ZnCd(S_0.5Se_0.5)₂ thin films for photoelectrochemical (PEC) cell application

In our study, we use a new method called the arrested precipitation technique (APT) to create CdZn(SSe)₂ (CZSS) thin films. We obtain samples at different deposition times, ranging from 2.5 to 4 h, and analyze the effects of deposition time on the opto-structural, morphological, compositional, and photoelectrochemical (PEC) solar cell properties. As a result, we find that the band gap energy increases from 2.366 to 2.60 eV with prolonged growth time, as shown by UV–Vis spectra. X-ray diffraction (XRD) analysis confirms that the crystal structure is hexagonal, with the crystallite size increasing from 76 to 93 nm. The dislocation density and microstrain, determined by the Scherrer formula, decrease from 1.72 to 1.14 lines m⁻² and from 4.75 × 10⁻³ to 3.87 × 10⁻³ (lines m⁻²), respectively. These results are validated using the Williamson-Hall (WH) plot and size-strain plot. The average grain size, evaluated using the standard scale bar method in scanning electron microscopy (SEM), ranges from 80 to 150 nm across CZ1 to CZ4 samples. Transmission electron microscopy (TEM) images of CZ4 and CZ2 reveal particle sizes of 101 nm and 87 nm, respectively, while selected area electron diffraction (SAED) patterns confirm the polycrystalline nature of the material. Energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) analyses confirm the presence of Cd, Zn, S, and Se elements in their intended stoichiometry. Notably, CZSS photoelectrodes deposited over 4 h show better performance in Photoelectrochemical cells (PEC), achieving the highest photoconversion efficiency (ɳ) at 2.33 %, as evidenced by J-V measurements.