TY - JOUR
T1 - Fabrication of silicon carbide nanocrystals by electrical discharge and laser-induced processes in solution
AU - Nevar, Alena
AU - Tarasenka, Natalie
AU - Nedelko, Mikhail
AU - Chakrabarti, Supriya
AU - Velusamy, Tamilselvan
AU - Mariotti, Davide
AU - Tarasenko, Nikolai
PY - 2022/9
Y1 - 2022/9
N2 - The capabilities of the liquid assisted electrical discharge technique with additional laser irradiation of colloids for the synthesis of SiC nanocrystals (NCs) have been studied. For optimization of the conditions for the binary NCs formation, the characterization of inner structure, phase composition and morphology was performed by means of high resolution transmission electron microscopy, selected area electron diffraction, X-Ray photoelectron spectroscopy, Raman and Fourier-transform infrared spectroscopy. The results of the characterization proved the formation of near-spherical SiC NCs having two-peak size distribution with average diameter of 3.7 and 11.4 nm before and 2.3 nm after additional laser treatment. The possible mechanism of nanostructured SiC formation has been discussed. The developed technique is expected to be effective for fabrication of SiC NCs as a promising material for optoelectronic devices.
AB - The capabilities of the liquid assisted electrical discharge technique with additional laser irradiation of colloids for the synthesis of SiC nanocrystals (NCs) have been studied. For optimization of the conditions for the binary NCs formation, the characterization of inner structure, phase composition and morphology was performed by means of high resolution transmission electron microscopy, selected area electron diffraction, X-Ray photoelectron spectroscopy, Raman and Fourier-transform infrared spectroscopy. The results of the characterization proved the formation of near-spherical SiC NCs having two-peak size distribution with average diameter of 3.7 and 11.4 nm before and 2.3 nm after additional laser treatment. The possible mechanism of nanostructured SiC formation has been discussed. The developed technique is expected to be effective for fabrication of SiC NCs as a promising material for optoelectronic devices.
KW - liquid assisted electrical discharge technique
KW - SiC nanocrystals
KW - optoelectronic devices
U2 - 10.1007/s11090-022-10266-y
DO - 10.1007/s11090-022-10266-y
M3 - Article
SN - 1572-8986
VL - 42
SP - 1085
EP - 1099
JO - Plasma Chemistry and Plasma Processing
JF - Plasma Chemistry and Plasma Processing
ER -