Fabrication of planar GaN-based micro-pixel light emitting diode arrays

Research output: Contribution to journalConference Contribution

Abstract

Micro-pixelated GaN light-emitting diodes (‘micro-LED’s) offer attractions for a wide range of applications including microdisplays, mask-free photolithography, lab-on-a-chip and bioinstrumentation [1]. Mesa dry etching methods have underpinned the development of this technology to date. Here we propose and demonstrate a new planar process which simplifies the process flow and permits individually-addressable pixelated devices to be fabricated without any obvious degradation of electrical and optical performance. The approach is based on the intrinsic high resistivity of the p-type GaN layer for pixel to pixel electrical isolation and on a CHF3 plasma treatment to dramatically reduce current leakage through the p-GaN/metal interface. Consequently, this process requires a lower number of fabrication steps than previously used processes using mesa etching for pixel definition and dielectric deposition for electrical insulation [2]. It leads to a planar active area well suited for further integration of functional micro-elements, including microfluidic-channels, microoptics or luminescent materials for colour conversion [3, 4]. This new fabrication route has been validated by fabricating and characterizing an individually addressable micro-stripe LED array emitting at 470 nm.
LanguageEnglish
Pages84-85
Number of pages1
JournalIEEE Lasers and Electro-Optics Society Annual Meeting
DOIs
Publication statusPublished - 8 Oct 2009

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Light emitting diodes
Pixels
Fabrication
Microoptics
Lab-on-a-chip
Dry etching
Photolithography
Microfluidics
Biosensors
Leakage currents
Insulation
Masks
Etching
Metals
Color
Plasmas
Degradation
fluoroform

Keywords

  • diode arrays
  • microdisplays
  • mask-free photolithography

Cite this

@article{3ce7392e522f4b92ad0ce3797db68d5a,
title = "Fabrication of planar GaN-based micro-pixel light emitting diode arrays",
abstract = "Micro-pixelated GaN light-emitting diodes (‘micro-LED’s) offer attractions for a wide range of applications including microdisplays, mask-free photolithography, lab-on-a-chip and bioinstrumentation [1]. Mesa dry etching methods have underpinned the development of this technology to date. Here we propose and demonstrate a new planar process which simplifies the process flow and permits individually-addressable pixelated devices to be fabricated without any obvious degradation of electrical and optical performance. The approach is based on the intrinsic high resistivity of the p-type GaN layer for pixel to pixel electrical isolation and on a CHF3 plasma treatment to dramatically reduce current leakage through the p-GaN/metal interface. Consequently, this process requires a lower number of fabrication steps than previously used processes using mesa etching for pixel definition and dielectric deposition for electrical insulation [2]. It leads to a planar active area well suited for further integration of functional micro-elements, including microfluidic-channels, microoptics or luminescent materials for colour conversion [3, 4]. This new fabrication route has been validated by fabricating and characterizing an individually addressable micro-stripe LED array emitting at 470 nm.",
keywords = "diode arrays, microdisplays, mask-free photolithography",
author = "D. Massoubre and J. McKendry and B.J.E. Guilhabert and Z. Gong and I.M. Watson and E. Gu and M.D. Dawson",
year = "2009",
month = "10",
day = "8",
doi = "10.1109/LEOS.2009.5343456",
language = "English",
pages = "84--85",
journal = "IEEE Lasers and Electro-Optics Society Annual Meeting",
issn = "1092-8081",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Fabrication of planar GaN-based micro-pixel light emitting diode arrays

AU - Massoubre, D.

AU - McKendry, J.

AU - Guilhabert, B.J.E.

AU - Gong, Z.

AU - Watson, I.M.

AU - Gu, E.

AU - Dawson, M.D.

PY - 2009/10/8

Y1 - 2009/10/8

N2 - Micro-pixelated GaN light-emitting diodes (‘micro-LED’s) offer attractions for a wide range of applications including microdisplays, mask-free photolithography, lab-on-a-chip and bioinstrumentation [1]. Mesa dry etching methods have underpinned the development of this technology to date. Here we propose and demonstrate a new planar process which simplifies the process flow and permits individually-addressable pixelated devices to be fabricated without any obvious degradation of electrical and optical performance. The approach is based on the intrinsic high resistivity of the p-type GaN layer for pixel to pixel electrical isolation and on a CHF3 plasma treatment to dramatically reduce current leakage through the p-GaN/metal interface. Consequently, this process requires a lower number of fabrication steps than previously used processes using mesa etching for pixel definition and dielectric deposition for electrical insulation [2]. It leads to a planar active area well suited for further integration of functional micro-elements, including microfluidic-channels, microoptics or luminescent materials for colour conversion [3, 4]. This new fabrication route has been validated by fabricating and characterizing an individually addressable micro-stripe LED array emitting at 470 nm.

AB - Micro-pixelated GaN light-emitting diodes (‘micro-LED’s) offer attractions for a wide range of applications including microdisplays, mask-free photolithography, lab-on-a-chip and bioinstrumentation [1]. Mesa dry etching methods have underpinned the development of this technology to date. Here we propose and demonstrate a new planar process which simplifies the process flow and permits individually-addressable pixelated devices to be fabricated without any obvious degradation of electrical and optical performance. The approach is based on the intrinsic high resistivity of the p-type GaN layer for pixel to pixel electrical isolation and on a CHF3 plasma treatment to dramatically reduce current leakage through the p-GaN/metal interface. Consequently, this process requires a lower number of fabrication steps than previously used processes using mesa etching for pixel definition and dielectric deposition for electrical insulation [2]. It leads to a planar active area well suited for further integration of functional micro-elements, including microfluidic-channels, microoptics or luminescent materials for colour conversion [3, 4]. This new fabrication route has been validated by fabricating and characterizing an individually addressable micro-stripe LED array emitting at 470 nm.

KW - diode arrays

KW - microdisplays

KW - mask-free photolithography

UR - http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5343456

U2 - 10.1109/LEOS.2009.5343456

DO - 10.1109/LEOS.2009.5343456

M3 - Conference Contribution

SP - 84

EP - 85

JO - IEEE Lasers and Electro-Optics Society Annual Meeting

T2 - IEEE Lasers and Electro-Optics Society Annual Meeting

JF - IEEE Lasers and Electro-Optics Society Annual Meeting

SN - 1092-8081

ER -