Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique

H.W. Choi, C.W. Jeon, M.D. Dawson

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


A novel method of etching which allows the direct interconnection of multiple GaN-based devices is introduced. The mesa structures of devices are etched using an isotropic recipe which produces tapered sidewalls. The extent of inclination can be readily controlled through various etching parameters, which include the ICP power, plate power and pressure, thus modifying the vertical and lateral etch components. This approach has been successfully adopted in the fabrication of interconnect and matrix-addressable micro-LEDs, which offer superior optical and electrical performance and a high degree of uniformity compared to similar devices fabricated using conventional processes.
Original languageEnglish
Pages (from-to)527-530
Number of pages3
JournalJournal of Crystal Growth
Issue number3-4
Publication statusPublished - 4 Jun 2004


  • etching
  • nitrides
  • light emitting diodes
  • microdisplays


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