Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique

H.W. Choi, C.W. Jeon, M.D. Dawson

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A novel method of etching which allows the direct interconnection of multiple GaN-based devices is introduced. The mesa structures of devices are etched using an isotropic recipe which produces tapered sidewalls. The extent of inclination can be readily controlled through various etching parameters, which include the ICP power, plate power and pressure, thus modifying the vertical and lateral etch components. This approach has been successfully adopted in the fabrication of interconnect and matrix-addressable micro-LEDs, which offer superior optical and electrical performance and a high degree of uniformity compared to similar devices fabricated using conventional processes.
LanguageEnglish
Pages527-530
Number of pages3
JournalJournal of Crystal Growth
Volume268
Issue number3-4
DOIs
Publication statusPublished - 4 Jun 2004

Fingerprint

Light emitting diodes
Etching
light emitting diodes
Fabrication
fabrication
matrices
etching
mesas
inclination

Keywords

  • etching
  • nitrides
  • light emitting diodes
  • microdisplays

Cite this

@article{9c2213a387e54317951dc2a50259ba66,
title = "Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique",
abstract = "A novel method of etching which allows the direct interconnection of multiple GaN-based devices is introduced. The mesa structures of devices are etched using an isotropic recipe which produces tapered sidewalls. The extent of inclination can be readily controlled through various etching parameters, which include the ICP power, plate power and pressure, thus modifying the vertical and lateral etch components. This approach has been successfully adopted in the fabrication of interconnect and matrix-addressable micro-LEDs, which offer superior optical and electrical performance and a high degree of uniformity compared to similar devices fabricated using conventional processes.",
keywords = "etching, nitrides, light emitting diodes, microdisplays",
author = "H.W. Choi and C.W. Jeon and M.D. Dawson",
year = "2004",
month = "6",
day = "4",
doi = "10.1016/j.jcrysgro.2004.04.085",
language = "English",
volume = "268",
pages = "527--530",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
number = "3-4",

}

Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique. / Choi, H.W.; Jeon, C.W.; Dawson, M.D.

In: Journal of Crystal Growth, Vol. 268, No. 3-4, 04.06.2004, p. 527-530.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique

AU - Choi, H.W.

AU - Jeon, C.W.

AU - Dawson, M.D.

PY - 2004/6/4

Y1 - 2004/6/4

N2 - A novel method of etching which allows the direct interconnection of multiple GaN-based devices is introduced. The mesa structures of devices are etched using an isotropic recipe which produces tapered sidewalls. The extent of inclination can be readily controlled through various etching parameters, which include the ICP power, plate power and pressure, thus modifying the vertical and lateral etch components. This approach has been successfully adopted in the fabrication of interconnect and matrix-addressable micro-LEDs, which offer superior optical and electrical performance and a high degree of uniformity compared to similar devices fabricated using conventional processes.

AB - A novel method of etching which allows the direct interconnection of multiple GaN-based devices is introduced. The mesa structures of devices are etched using an isotropic recipe which produces tapered sidewalls. The extent of inclination can be readily controlled through various etching parameters, which include the ICP power, plate power and pressure, thus modifying the vertical and lateral etch components. This approach has been successfully adopted in the fabrication of interconnect and matrix-addressable micro-LEDs, which offer superior optical and electrical performance and a high degree of uniformity compared to similar devices fabricated using conventional processes.

KW - etching

KW - nitrides

KW - light emitting diodes

KW - microdisplays

UR - http://dx.doi.org/10.1016/j.jcrysgro.2004.04.085

U2 - 10.1016/j.jcrysgro.2004.04.085

DO - 10.1016/j.jcrysgro.2004.04.085

M3 - Article

VL - 268

SP - 527

EP - 530

JO - Journal of Crystal Growth

T2 - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3-4

ER -