Abstract
We describe the fabrication and characterization
of matrix-addressable microlight-emitting diode (micro-LED)
arrays based on InGaN, having elemental diameter of 20 m and
array size of up to 128x96 elements. The introduction of a planar
topology prior to contact metallization is an important processing
step in advancing the performance of these devices. Planarization
is achieved by chemical-mechanical polishing of the SiO2-deposited
surface. In this way, the need for a single contact pad for
each individual element can be eliminated. The resulting significant
simplification in the addressing of the pixels opens the way
to scaling to devices with large numbers of elements. Compared
to conventional broad-area LEDs, the micrometer-scale devices
exhibit superior light output and current handling capabilities,
making them excellent candidates for a range of uses including high-efficiency and robust microdisplays.
Original language | English |
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Pages (from-to) | 1516-1518 |
Number of pages | 2 |
Journal | IEEE Photonics Technology Letters |
Volume | 15 |
Issue number | 11 |
DOIs | |
Publication status | Published - Nov 2003 |
Keywords
- GaN
- microdisplays
- microlight-emitting diodes
- micro-LEDs