Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays

Pengfei Tian, Jonathan J. D. McKendry, Erdan Gu, Zhizhong Chen, Yongjian Sun, Guoyi Zhang, Martin D. Dawson, Ran Liu

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.
LanguageEnglish
Pages699-707
Number of pages9
JournalOptics Express
Volume24
Issue number1
DOIs
Publication statusPublished - 8 Jan 2016

Fingerprint

Light emitting diodes
light emitting diodes
Fabrication
fabrication
optical communication
Substrates
Metals
Display devices
metal bonding
Aluminum Oxide
Epitaxial layers
Electroluminescence
data transmission
Current voltage characteristics
Sapphire
electroluminescence
Data communication systems
Luminance
Thermal conductivity
brightness

Keywords

  • InGaN light-emitting diodes
  • flexible micro LEDs
  • sapphire substrates

Cite this

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title = "Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays",
abstract = "Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.",
keywords = "InGaN light-emitting diodes, flexible micro LEDs, sapphire substrates",
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Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays. / Tian, Pengfei; McKendry, Jonathan J. D.; Gu, Erdan; Chen, Zhizhong; Sun, Yongjian; Zhang, Guoyi; Dawson, Martin D.; Liu, Ran.

In: Optics Express, Vol. 24, No. 1, 08.01.2016, p. 699-707.

Research output: Contribution to journalArticle

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AU - Tian, Pengfei

AU - McKendry, Jonathan J. D.

AU - Gu, Erdan

AU - Chen, Zhizhong

AU - Sun, Yongjian

AU - Zhang, Guoyi

AU - Dawson, Martin D.

AU - Liu, Ran

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KW - sapphire substrates

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