Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays

Pengfei Tian; Jonathan J. D. McKendry; Erdan Gu; Zhizhong Chen; Yongjian Sun; Guoyi Zhang; Martin D. Dawson; Ran Liu

doi:10.1364/OE.24.000699

Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays

Pengfei Tian, Jonathan J. D. McKendry, Erdan Gu, Zhizhong Chen, Yongjian Sun, Guoyi Zhang, Martin D. Dawson, Ran Liu

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Abstract

Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.

Original language	English
Pages (from-to)	699-707
Number of pages	9
Journal	Optics Express
Volume	24
Issue number	1
DOIs	https://doi.org/10.1364/OE.24.000699
Publication status	Published - 8 Jan 2016

Keywords

InGaN light-emitting diodes
flexible micro LEDs
sapphire substrates

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Pengfei-etal-OE-2016-Fabrication-characterization-and-applications-of-flexible-vertical-InGaNAccepted author manuscript, 0.98 MB

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title = "Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays",

abstract = "Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.",

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author = "Pengfei Tian and McKendry, {Jonathan J. D.} and Erdan Gu and Zhizhong Chen and Yongjian Sun and Guoyi Zhang and Dawson, {Martin D.} and Ran Liu",

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T1 - Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays

AU - Tian, Pengfei

AU - McKendry, Jonathan J. D.

AU - Gu, Erdan

AU - Chen, Zhizhong

AU - Sun, Yongjian

AU - Zhang, Guoyi

AU - Dawson, Martin D.

AU - Liu, Ran

PY - 2016/1/8

Y1 - 2016/1/8

N2 - Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.

AB - Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.

KW - InGaN light-emitting diodes

KW - flexible micro LEDs

KW - sapphire substrates

UR - https://www.osapublishing.org/oe/abstract.cfm?uri=oe-24-1-699

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DO - 10.1364/OE.24.000699

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JF - Optics Express

IS - 1

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Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays

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Keywords

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