Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off

C. Xiong, F. Rizzi, K. Bejtka, P. R. Edwards, E. Gu, M. D. Dawson, R. W. Martin, I. M. Watson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A novel epitaxial lift-off process for III-nitrides, involving selective removal of a sacrificial (Al, In)N layer in a hot nitric acid etchant, is reported. This was applied to the fabrication of 1−λ GaN planar microcavities bounded by two dielectric DBRs, starting from epitaxial GaN-(Al, In)N-GaN trilayers grown on free-standing GaN or high-quality GaN template material. An optically smooth surface was retained on the GaN surface exposed to the nitric acid etch, with root mean square roughness values as low as 2 nm over 8 μm×8 μm areas. Photoluminescence and reflectivity spectra were recorded from completed microcavities, and the latter showed clear dips in the region of 3.5 eV.
Original languageEnglish
Pages (from-to)129-133
Number of pages5
JournalSuperlattices and Microstructures
Volume47
Issue number1
DOIs
Publication statusPublished - Jan 2010
EventProceedings of the 9th International Conference on Physics of Light-Matter Coupling in Nanostructures, PLMCN 2009 - Lecce, Italy
Duration: 16 Apr 200820 Apr 2008

Keywords

  • gallium nitride
  • aluminium indium nitride
  • microcavity
  • wet etching
  • reflectance
  • photoluminescencegallium nitride
  • photoluminescence

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