Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off

C. Xiong, F. Rizzi, K. Bejtka, P. R. Edwards, E. Gu, M. D. Dawson, R. W. Martin, I. M. Watson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A novel epitaxial lift-off process for III-nitrides, involving selective removal of a sacrificial (Al, In)N layer in a hot nitric acid etchant, is reported. This was applied to the fabrication of 1−λ GaN planar microcavities bounded by two dielectric DBRs, starting from epitaxial GaN-(Al, In)N-GaN trilayers grown on free-standing GaN or high-quality GaN template material. An optically smooth surface was retained on the GaN surface exposed to the nitric acid etch, with root mean square roughness values as low as 2 nm over 8 μm×8 μm areas. Photoluminescence and reflectivity spectra were recorded from completed microcavities, and the latter showed clear dips in the region of 3.5 eV.

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Nitric Acid
Microcavities
nitric acid
Nitric acid
Spectroscopy
Fabrication
fabrication
etchants
Nitrides
spectroscopy
nitrides
Photoluminescence
roughness
templates
Surface roughness
reflectance
photoluminescence

Keywords

  • gallium nitride
  • aluminium indium nitride
  • microcavity
  • wet etching
  • reflectance
  • photoluminescencegallium nitride
  • photoluminescence

Cite this

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title = "Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off",
abstract = "A novel epitaxial lift-off process for III-nitrides, involving selective removal of a sacrificial (Al, In)N layer in a hot nitric acid etchant, is reported. This was applied to the fabrication of 1−λ GaN planar microcavities bounded by two dielectric DBRs, starting from epitaxial GaN-(Al, In)N-GaN trilayers grown on free-standing GaN or high-quality GaN template material. An optically smooth surface was retained on the GaN surface exposed to the nitric acid etch, with root mean square roughness values as low as 2 nm over 8 μm×8 μm areas. Photoluminescence and reflectivity spectra were recorded from completed microcavities, and the latter showed clear dips in the region of 3.5 eV.",
keywords = "gallium nitride, aluminium indium nitride, microcavity, wet etching, reflectance, photoluminescencegallium nitride, photoluminescence",
author = "C. Xiong and F. Rizzi and K. Bejtka and Edwards, {P. R.} and E. Gu and Dawson, {M. D.} and Martin, {R. W.} and Watson, {I. M.}",
year = "2010",
month = "1",
doi = "10.1016/j.spmi.2009.07.001",
language = "English",
volume = "47",
pages = "129--133",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
number = "1",

}

Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off. / Xiong, C.; Rizzi, F.; Bejtka, K.; Edwards, P. R.; Gu, E.; Dawson, M. D.; Martin, R. W.; Watson, I. M.

In: Superlattices and Microstructures, Vol. 47, No. 1, 01.2010, p. 129-133.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off

AU - Xiong, C.

AU - Rizzi, F.

AU - Bejtka, K.

AU - Edwards, P. R.

AU - Gu, E.

AU - Dawson, M. D.

AU - Martin, R. W.

AU - Watson, I. M.

PY - 2010/1

Y1 - 2010/1

N2 - A novel epitaxial lift-off process for III-nitrides, involving selective removal of a sacrificial (Al, In)N layer in a hot nitric acid etchant, is reported. This was applied to the fabrication of 1−λ GaN planar microcavities bounded by two dielectric DBRs, starting from epitaxial GaN-(Al, In)N-GaN trilayers grown on free-standing GaN or high-quality GaN template material. An optically smooth surface was retained on the GaN surface exposed to the nitric acid etch, with root mean square roughness values as low as 2 nm over 8 μm×8 μm areas. Photoluminescence and reflectivity spectra were recorded from completed microcavities, and the latter showed clear dips in the region of 3.5 eV.

AB - A novel epitaxial lift-off process for III-nitrides, involving selective removal of a sacrificial (Al, In)N layer in a hot nitric acid etchant, is reported. This was applied to the fabrication of 1−λ GaN planar microcavities bounded by two dielectric DBRs, starting from epitaxial GaN-(Al, In)N-GaN trilayers grown on free-standing GaN or high-quality GaN template material. An optically smooth surface was retained on the GaN surface exposed to the nitric acid etch, with root mean square roughness values as low as 2 nm over 8 μm×8 μm areas. Photoluminescence and reflectivity spectra were recorded from completed microcavities, and the latter showed clear dips in the region of 3.5 eV.

KW - gallium nitride

KW - aluminium indium nitride

KW - microcavity

KW - wet etching

KW - reflectance

KW - photoluminescencegallium nitride

KW - photoluminescence

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DO - 10.1016/j.spmi.2009.07.001

M3 - Article

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JO - Superlattices and Microstructures

T2 - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 1

ER -