Fabrication and performance of parallel-addressed InGaN micro-LED arrays

H.W. Choi, C.W. Jeon, M.D. Dawson, P.R. Edwards, R.W. Martin

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 /spl mu/m, respectively, and overall dimensions 490 /spl times/490 /spl mu/m, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.
Original languageEnglish
Pages (from-to)510-512
Number of pages2
JournalIEEE Photonics Technology Letters
Volume15
Issue number4
DOIs
Publication statusPublished - Apr 2003

Keywords

  • III-V semiconductors
  • gallium compounds
  • indium compounds
  • light emitting diodes
  • light scattering
  • optical arrays
  • optical interconnections

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