Abstract
| Language | English |
|---|---|
| Pages | 510-512 |
| Number of pages | 2 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 15 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 2003 |
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Keywords
- III-V semiconductors
- gallium compounds
- indium compounds
- light emitting diodes
- light scattering
- optical arrays
- optical interconnections
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Fabrication and performance of parallel-addressed InGaN micro-LED arrays. / Choi, H.W.; Jeon, C.W.; Dawson, M.D.; Edwards, P.R.; Martin, R.W.
In: IEEE Photonics Technology Letters, Vol. 15, No. 4, 04.2003, p. 510-512.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication and performance of parallel-addressed InGaN micro-LED arrays
AU - Choi, H.W.
AU - Jeon, C.W.
AU - Dawson, M.D.
AU - Edwards, P.R.
AU - Martin, R.W.
PY - 2003/4
Y1 - 2003/4
N2 - High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 /spl mu/m, respectively, and overall dimensions 490 /spl times/490 /spl mu/m, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.
AB - High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 /spl mu/m, respectively, and overall dimensions 490 /spl times/490 /spl mu/m, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.
KW - III-V semiconductors
KW - gallium compounds
KW - indium compounds
KW - light emitting diodes
KW - light scattering
KW - optical arrays
KW - optical interconnections
UR - http://ieeexplore.ieee.org/iel5/68/26684/01190186.pdf?tp=&isnumber=26684&arnumber=1190186&punumber=68
UR - http://dx.doi.org/10.1109/LPT.2003.809257
U2 - 10.1109/LPT.2003.809257
DO - 10.1109/LPT.2003.809257
M3 - Article
VL - 15
SP - 510
EP - 512
JO - IEEE Photonics Technology Letters
T2 - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 4
ER -