Fabrication and performance of parallel-addressed InGaN micro-LED arrays

H.W. Choi, C.W. Jeon, M.D. Dawson, P.R. Edwards, R.W. Martin

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 /spl mu/m, respectively, and overall dimensions 490 /spl times/490 /spl mu/m, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.
LanguageEnglish
Pages510-512
Number of pages2
JournalIEEE Photonics Technology Letters
Volume15
Issue number4
DOIs
Publication statusPublished - Apr 2003

Fingerprint

Light emitting diodes
light emitting diodes
Fabrication
fabrication
Metallizing
electric contacts
Etching
Photons
etching
wafers
Scattering
output
photons
Electric potential
electric potential
scattering
Direction compound

Keywords

  • III-V semiconductors
  • gallium compounds
  • indium compounds
  • light emitting diodes
  • light scattering
  • optical arrays
  • optical interconnections

Cite this

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title = "Fabrication and performance of parallel-addressed InGaN micro-LED arrays",
abstract = "High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 /spl mu/m, respectively, and overall dimensions 490 /spl times/490 /spl mu/m, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.",
keywords = "III-V semiconductors, gallium compounds, indium compounds, light emitting diodes, light scattering, optical arrays, optical interconnections",
author = "H.W. Choi and C.W. Jeon and M.D. Dawson and P.R. Edwards and R.W. Martin",
year = "2003",
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pages = "510--512",
journal = "IEEE Photonics Technology Letters",
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Fabrication and performance of parallel-addressed InGaN micro-LED arrays. / Choi, H.W.; Jeon, C.W.; Dawson, M.D.; Edwards, P.R.; Martin, R.W.

In: IEEE Photonics Technology Letters, Vol. 15, No. 4, 04.2003, p. 510-512.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication and performance of parallel-addressed InGaN micro-LED arrays

AU - Choi, H.W.

AU - Jeon, C.W.

AU - Dawson, M.D.

AU - Edwards, P.R.

AU - Martin, R.W.

PY - 2003/4

Y1 - 2003/4

N2 - High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 /spl mu/m, respectively, and overall dimensions 490 /spl times/490 /spl mu/m, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.

AB - High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 /spl mu/m, respectively, and overall dimensions 490 /spl times/490 /spl mu/m, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.

KW - III-V semiconductors

KW - gallium compounds

KW - indium compounds

KW - light emitting diodes

KW - light scattering

KW - optical arrays

KW - optical interconnections

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