Abstract
The main task involved in the development of micro-LED arrays relates to the electrical contacting and interconnection of each individual pixel. Planarization has been a common solution employed to level out uneven topologies. The fabrication and performance of GaN-based micro-light emitting diode (μm-LED) arrays with 64×64 elements, with emission at the wavelengths of 510nm (green) and 370nm (near-UV), are reported. It is clear that each individual pixel is well resolved and there is no significant optical cross-talk. We will report fully on these devices, and also on 128×96 arrays at both wavelengths which are currently in development.
Original language | English |
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Title of host publication | LEOS 2003: 16th Annual meeting of the IEEE Lasers & Electro-Optics Society |
Publisher | IEEE |
Pages | 878-879 |
Number of pages | 1 |
Volume | 2 |
ISBN (Print) | 0-7803-7888-1 |
DOIs | |
Publication status | Published - 28 Oct 2003 |
Keywords
- gallium compounds
- light emitting diodes
- LED
- micro-optics
- optical arrays
- optical fabrication
- visible spectra