Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities

K. Bejtka, P.R. Edwards, R.W. Martin, F. Reveret, A. Vasson, J. Leymarie, I.R. Sellers, M. Leroux

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The optical properties and fabrication of ultrathin GaN-based microcavities grown on silicon substrates are described. The epitaxial part of the optical cavities, consisting of a λ/2 GaN layer above a 3-period epitaxial Bragg mirror, is sandwiched between two silica/zirconia mirrors. At a suitable point in the fabrication process the silicon substrate was selectively removed using via holes. The cavity mode and excitonic resonance are observed by reflectivity at low and room temperature, demonstrating a quality factor of ~125. The dispersion of the modes and their linewidth is measured using angle-resolved reflectivity and successfully modelled using transfer matrix simulations.
Original languageEnglish
JournalSemiconductor Science and Technology
Volume23
Issue number4
DOIs
Publication statusPublished - Apr 2008

Fingerprint

Microcavities
Silicon
Mirrors
mirrors
reflectance
Fabrication
cavities
fabrication
silicon
Bragg reflectors
Substrates
zirconium oxides
Silicon Dioxide
Zirconia
Linewidth
Q factors
Optical properties
Silica
silicon dioxide
optical properties

Keywords

  • silicon substrates
  • ultrathin GaN-based microcavities
  • optical properties

Cite this

Bejtka, K. ; Edwards, P.R. ; Martin, R.W. ; Reveret, F. ; Vasson, A. ; Leymarie, J. ; Sellers, I.R. ; Leroux, M. / Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities. In: Semiconductor Science and Technology. 2008 ; Vol. 23, No. 4.
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abstract = "The optical properties and fabrication of ultrathin GaN-based microcavities grown on silicon substrates are described. The epitaxial part of the optical cavities, consisting of a λ/2 GaN layer above a 3-period epitaxial Bragg mirror, is sandwiched between two silica/zirconia mirrors. At a suitable point in the fabrication process the silicon substrate was selectively removed using via holes. The cavity mode and excitonic resonance are observed by reflectivity at low and room temperature, demonstrating a quality factor of ~125. The dispersion of the modes and their linewidth is measured using angle-resolved reflectivity and successfully modelled using transfer matrix simulations.",
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Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities. / Bejtka, K.; Edwards, P.R.; Martin, R.W.; Reveret, F.; Vasson, A.; Leymarie, J.; Sellers, I.R.; Leroux, M.

In: Semiconductor Science and Technology, Vol. 23, No. 4, 04.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities

AU - Bejtka, K.

AU - Edwards, P.R.

AU - Martin, R.W.

AU - Reveret, F.

AU - Vasson, A.

AU - Leymarie, J.

AU - Sellers, I.R.

AU - Leroux, M.

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AB - The optical properties and fabrication of ultrathin GaN-based microcavities grown on silicon substrates are described. The epitaxial part of the optical cavities, consisting of a λ/2 GaN layer above a 3-period epitaxial Bragg mirror, is sandwiched between two silica/zirconia mirrors. At a suitable point in the fabrication process the silicon substrate was selectively removed using via holes. The cavity mode and excitonic resonance are observed by reflectivity at low and room temperature, demonstrating a quality factor of ~125. The dispersion of the modes and their linewidth is measured using angle-resolved reflectivity and successfully modelled using transfer matrix simulations.

KW - silicon substrates

KW - ultrathin GaN-based microcavities

KW - optical properties

UR - http://dx.doi.org/10.1088/0268-1242/23/4/045008

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DO - 10.1088/0268-1242/23/4/045008

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