Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

Runze Lin; Desheng Zhao; Guohao Yu; Xiaoyan Liu; Dongdong Wu; Erdan Gu; Xugao Cui; Ran Liu; Baoshun Zhang; Pengfei Tian

doi:10.1063/5.0025587

Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

Runze Lin, Desheng Zhao, Guohao Yu, Xiaoyan Liu, Dongdong Wu, Erdan Gu, Xugao Cui, Ran Liu, Baoshun Zhang, Pengfei Tian^*

^*Corresponding author for this work

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Abstract

In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the flexible normally-off HEMT. By testing the output characteristics and transfer characteristics of the Si-substrate HEMT and PET-substrate HEMT, we have demonstrated that the PET-substrate HEMT has excellent performance and successfully achieved the mechanical flexibility. Furthermore, we analyzed the physical mechanisms of the change in PET-substrate and Si-substrate HEMT characteristics, as well as flexible HEMT performance under bent and flattened states. The flexible HEMT array demonstrates significant potential in integration with other flexible devices, such as GaN-based micro-LED arrays.

Original language	English
Article number	105317
Number of pages	6
Journal	AIP Advances
Volume	10
Issue number	10
DOIs	https://doi.org/10.1063/5.0025587
Publication status	Published - 8 Oct 2020

Funding

This work was supported by the National Natural Science Foundation of China (NSFC) (Grant Nos. 61974031 and 61705041), the Fudan University-CIOMP Joint Fund, the Shanghai Technical Standard Program (Grant No. 18DZ2206000), and the Science and Technology on Monolithic Integrated Circuits and Modules Laboratory in Nanjing Electronic Devices Institute (Grant No. 6142803180407).

Keywords

high electron mobility transistor (HEMT)
mechanical grinding
deep silicon etching

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10.1063/5.0025587Licence: CC BY 4.0

Lin-etal-AIPA-2020-Fabrication-and-characteristics-of-flexible-normally-off-AlGaN-GaN HEMTsFinal published version, 4.8 MBLicence: CC BY 4.0

Cite this

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title = "Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs",

abstract = "In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the flexible normally-off HEMT. By testing the output characteristics and transfer characteristics of the Si-substrate HEMT and PET-substrate HEMT, we have demonstrated that the PET-substrate HEMT has excellent performance and successfully achieved the mechanical flexibility. Furthermore, we analyzed the physical mechanisms of the change in PET-substrate and Si-substrate HEMT characteristics, as well as flexible HEMT performance under bent and flattened states. The flexible HEMT array demonstrates significant potential in integration with other flexible devices, such as GaN-based micro-LED arrays.",

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author = "Runze Lin and Desheng Zhao and Guohao Yu and Xiaoyan Liu and Dongdong Wu and Erdan Gu and Xugao Cui and Ran Liu and Baoshun Zhang and Pengfei Tian",

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T1 - Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

AU - Lin, Runze

AU - Zhao, Desheng

AU - Yu, Guohao

AU - Liu, Xiaoyan

AU - Wu, Dongdong

AU - Gu, Erdan

AU - Cui, Xugao

AU - Liu, Ran

AU - Zhang, Baoshun

AU - Tian, Pengfei

PY - 2020/10/8

Y1 - 2020/10/8

N2 - In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the flexible normally-off HEMT. By testing the output characteristics and transfer characteristics of the Si-substrate HEMT and PET-substrate HEMT, we have demonstrated that the PET-substrate HEMT has excellent performance and successfully achieved the mechanical flexibility. Furthermore, we analyzed the physical mechanisms of the change in PET-substrate and Si-substrate HEMT characteristics, as well as flexible HEMT performance under bent and flattened states. The flexible HEMT array demonstrates significant potential in integration with other flexible devices, such as GaN-based micro-LED arrays.

AB - In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the flexible normally-off HEMT. By testing the output characteristics and transfer characteristics of the Si-substrate HEMT and PET-substrate HEMT, we have demonstrated that the PET-substrate HEMT has excellent performance and successfully achieved the mechanical flexibility. Furthermore, we analyzed the physical mechanisms of the change in PET-substrate and Si-substrate HEMT characteristics, as well as flexible HEMT performance under bent and flattened states. The flexible HEMT array demonstrates significant potential in integration with other flexible devices, such as GaN-based micro-LED arrays.

KW - high electron mobility transistor (HEMT)

KW - mechanical grinding

KW - deep silicon etching

UR - https://www.scopus.com/pages/publications/85092708361

U2 - 10.1063/5.0025587

DO - 10.1063/5.0025587

M3 - Article

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VL - 10

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JF - AIP Advances

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M1 - 105317

ER -

Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

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