Fabricating high-density microarrays for retinal recording

K Mathieson, W Cunningham, J Marchal, J Melone, M Horn, V O'Shea, KM Smith, A Litke, EJ Chichilnisky, M Rahman

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Understanding how the retina encodes the visual scene is a problem, which requires large area, high-density microelectrode arrays to solve. The correlated signals that emerge from the output (ganglion) cells of the retina form a code, which is not well understood. We use a combination of electron beam lithography, photolithography and dry-etch pattern transfer to realise a 519-electrode array in the transparent conductor indium tin oxide (ITO). The electrodes are spaced at 60 μm in a hexagonal close-packed geometry. A mix and match lithography procedure is utilised, whereby the high-density inner region is fabricated using electron beam lithography whilst the outer sections are realised by photolithography. Reactive ion etching (RIE), using CH4/H2, of the ITO forms the array structure and SF6 RIE allows resist removal and patterning of vias through a plasma deposited Si3N4 protective layer. The electrical properties of the ITO layer are unaffected by the etching procedures. A reliable method for achieving low-impedance electroplated platinum electrodes has been employed to yield electrode impedances of ∼20 kΩ. An array fabricated using these dry-etch techniques is shown to record action potentials from live retinal tissue in neurophysiological experiments.
LanguageEnglish
Pages520-527
Number of pages8
JournalMicroelectronic Engineering
Volume67-8
DOIs
Publication statusPublished - 1 Jun 2003

Fingerprint

Microarrays
Tin oxides
recording
indium oxides
Indium
tin oxides
Electrodes
electrodes
lithography
Electron beam lithography
retina
Reactive ion etching
etching
Photolithography
photolithography
impedance
electron beams
Microelectrodes
Platinum
Lithography

Keywords

  • microarrays
  • retinal recording
  • fabrication

Cite this

Mathieson, K., Cunningham, W., Marchal, J., Melone, J., Horn, M., O'Shea, V., ... Rahman, M. (2003). Fabricating high-density microarrays for retinal recording. Microelectronic Engineering, 67-8, 520-527. https://doi.org/10.1016/S0167-9317(03)00109-6
Mathieson, K ; Cunningham, W ; Marchal, J ; Melone, J ; Horn, M ; O'Shea, V ; Smith, KM ; Litke, A ; Chichilnisky, EJ ; Rahman, M. / Fabricating high-density microarrays for retinal recording. In: Microelectronic Engineering. 2003 ; Vol. 67-8. pp. 520-527.
@article{91c124930c4c4257a79b7d2a806391c8,
title = "Fabricating high-density microarrays for retinal recording",
abstract = "Understanding how the retina encodes the visual scene is a problem, which requires large area, high-density microelectrode arrays to solve. The correlated signals that emerge from the output (ganglion) cells of the retina form a code, which is not well understood. We use a combination of electron beam lithography, photolithography and dry-etch pattern transfer to realise a 519-electrode array in the transparent conductor indium tin oxide (ITO). The electrodes are spaced at 60 μm in a hexagonal close-packed geometry. A mix and match lithography procedure is utilised, whereby the high-density inner region is fabricated using electron beam lithography whilst the outer sections are realised by photolithography. Reactive ion etching (RIE), using CH4/H2, of the ITO forms the array structure and SF6 RIE allows resist removal and patterning of vias through a plasma deposited Si3N4 protective layer. The electrical properties of the ITO layer are unaffected by the etching procedures. A reliable method for achieving low-impedance electroplated platinum electrodes has been employed to yield electrode impedances of ∼20 kΩ. An array fabricated using these dry-etch techniques is shown to record action potentials from live retinal tissue in neurophysiological experiments.",
keywords = "microarrays , retinal recording, fabrication",
author = "K Mathieson and W Cunningham and J Marchal and J Melone and M Horn and V O'Shea and KM Smith and A Litke and EJ Chichilnisky and M Rahman",
note = "28th International Conference on Micro- and Nano-Engineering, LUGANO, SWITZERLAND, SEP 16-19, 2002",
year = "2003",
month = "6",
day = "1",
doi = "10.1016/S0167-9317(03)00109-6",
language = "English",
volume = "67-8",
pages = "520--527",
journal = "Microelectronic Engineering",
issn = "0167-9317",

}

Mathieson, K, Cunningham, W, Marchal, J, Melone, J, Horn, M, O'Shea, V, Smith, KM, Litke, A, Chichilnisky, EJ & Rahman, M 2003, 'Fabricating high-density microarrays for retinal recording' Microelectronic Engineering, vol. 67-8, pp. 520-527. https://doi.org/10.1016/S0167-9317(03)00109-6

Fabricating high-density microarrays for retinal recording. / Mathieson, K; Cunningham, W; Marchal, J; Melone, J; Horn, M; O'Shea, V; Smith, KM; Litke, A; Chichilnisky, EJ; Rahman, M.

In: Microelectronic Engineering, Vol. 67-8, 01.06.2003, p. 520-527.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabricating high-density microarrays for retinal recording

AU - Mathieson, K

AU - Cunningham, W

AU - Marchal, J

AU - Melone, J

AU - Horn, M

AU - O'Shea, V

AU - Smith, KM

AU - Litke, A

AU - Chichilnisky, EJ

AU - Rahman, M

N1 - 28th International Conference on Micro- and Nano-Engineering, LUGANO, SWITZERLAND, SEP 16-19, 2002

PY - 2003/6/1

Y1 - 2003/6/1

N2 - Understanding how the retina encodes the visual scene is a problem, which requires large area, high-density microelectrode arrays to solve. The correlated signals that emerge from the output (ganglion) cells of the retina form a code, which is not well understood. We use a combination of electron beam lithography, photolithography and dry-etch pattern transfer to realise a 519-electrode array in the transparent conductor indium tin oxide (ITO). The electrodes are spaced at 60 μm in a hexagonal close-packed geometry. A mix and match lithography procedure is utilised, whereby the high-density inner region is fabricated using electron beam lithography whilst the outer sections are realised by photolithography. Reactive ion etching (RIE), using CH4/H2, of the ITO forms the array structure and SF6 RIE allows resist removal and patterning of vias through a plasma deposited Si3N4 protective layer. The electrical properties of the ITO layer are unaffected by the etching procedures. A reliable method for achieving low-impedance electroplated platinum electrodes has been employed to yield electrode impedances of ∼20 kΩ. An array fabricated using these dry-etch techniques is shown to record action potentials from live retinal tissue in neurophysiological experiments.

AB - Understanding how the retina encodes the visual scene is a problem, which requires large area, high-density microelectrode arrays to solve. The correlated signals that emerge from the output (ganglion) cells of the retina form a code, which is not well understood. We use a combination of electron beam lithography, photolithography and dry-etch pattern transfer to realise a 519-electrode array in the transparent conductor indium tin oxide (ITO). The electrodes are spaced at 60 μm in a hexagonal close-packed geometry. A mix and match lithography procedure is utilised, whereby the high-density inner region is fabricated using electron beam lithography whilst the outer sections are realised by photolithography. Reactive ion etching (RIE), using CH4/H2, of the ITO forms the array structure and SF6 RIE allows resist removal and patterning of vias through a plasma deposited Si3N4 protective layer. The electrical properties of the ITO layer are unaffected by the etching procedures. A reliable method for achieving low-impedance electroplated platinum electrodes has been employed to yield electrode impedances of ∼20 kΩ. An array fabricated using these dry-etch techniques is shown to record action potentials from live retinal tissue in neurophysiological experiments.

KW - microarrays

KW - retinal recording

KW - fabrication

U2 - 10.1016/S0167-9317(03)00109-6

DO - 10.1016/S0167-9317(03)00109-6

M3 - Article

VL - 67-8

SP - 520

EP - 527

JO - Microelectronic Engineering

T2 - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -