Extended X-ray absorption fine structure study of Er bonding in AlNO:Erx films with x <= 3.6%

M. Katsikini; V. Katchkanov; P. Boulet; P. R. Edwards; K. P. O'Donnell; V. Brien

doi:10.1063/1.5036614

Extended X-ray absorption fine structure study of Er bonding in AlNO:Erx films with x <= 3.6%

M. Katsikini, V. Katchkanov, P. Boulet, P. R. Edwards, K. P. O'Donnell, V. Brien

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Abstract

The structural properties of Er-doped AlNO epilayers grown by radio frequency magnetron sputtering were studied by Extended X-ray Absorption Fine Structure (EXAFS) spectra recorded at the Er L3 edge. The analysis revealed that Er substitutes for Al in all the studied samples and the increase in Er concentration from 0.5 to 3.6 at.% is not accompanied by formation of ErN, Er₂O₃ or Er clusters. Simultaneously recorded X-ray Absorption Near Edge Structure (XANES) spectra verify that the bonding configuration of Er is similar in all studied samples. The Er-N distance is constant at 2.18-2.19 Å i.e. approximately 15% larger than the Al-N bondlength, revealing that the introduction of Er in the cation sublattice causes considerable local distortion. The Debye-Waller factor, which measures the static disorder, of the second nearest shell of Al neighbors, has a local minimum for the sample containing 1% Er that coincides with the highest photoluminescence efficiency of the sample set.

Original language	English
Article number	085705
Number of pages	5
Journal	Journal of Applied Physics
Volume	124
Issue number	8
DOIs	https://doi.org/10.1063/1.5036614
Publication status	Published - 28 Aug 2018

Keywords

EXAFS
AlN
Er
rare earth
semiconductor doping

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10.1063/1.5036614

Katsikini-etal-JAP-2018-Extended-X-ray-absorption-fine-structure-study-of-Er-bondingAccepted author manuscript, 396 KB

https://aip.scitation.org/doi/10.1063/1.5036614

Cite this

@article{2814ca93c1694176ab4a58b59e593fc8,

title = "Extended X-ray absorption fine structure study of Er bonding in AlNO:Erx films with x <= 3.6%",

abstract = "The structural properties of Er-doped AlNO epilayers grown by radio frequency magnetron sputtering were studied by Extended X-ray Absorption Fine Structure (EXAFS) spectra recorded at the Er L3 edge. The analysis revealed that Er substitutes for Al in all the studied samples and the increase in Er concentration from 0.5 to 3.6 at.% is not accompanied by formation of ErN, Er2O3 or Er clusters. Simultaneously recorded X-ray Absorption Near Edge Structure (XANES) spectra verify that the bonding configuration of Er is similar in all studied samples. The Er-N distance is constant at 2.18-2.19 {\AA} i.e. approximately 15% larger than the Al-N bondlength, revealing that the introduction of Er in the cation sublattice causes considerable local distortion. The Debye-Waller factor, which measures the static disorder, of the second nearest shell of Al neighbors, has a local minimum for the sample containing 1% Er that coincides with the highest photoluminescence efficiency of the sample set.",

keywords = "EXAFS, AlN, Er, rare earth, semiconductor doping ",

author = "M. Katsikini and V. Katchkanov and P. Boulet and Edwards, {P. R.} and O'Donnell, {K. P.} and V. Brien",

year = "2018",

month = aug,

day = "28",

doi = "10.1063/1.5036614",

language = "English",

volume = "124",

journal = "Journal of Applied Physics",

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T1 - Extended X-ray absorption fine structure study of Er bonding in AlNO:Erx films with x <= 3.6%

AU - Katsikini, M.

AU - Katchkanov, V.

AU - Boulet, P.

AU - Edwards, P. R.

AU - O'Donnell, K. P.

AU - Brien, V.

PY - 2018/8/28

Y1 - 2018/8/28

N2 - The structural properties of Er-doped AlNO epilayers grown by radio frequency magnetron sputtering were studied by Extended X-ray Absorption Fine Structure (EXAFS) spectra recorded at the Er L3 edge. The analysis revealed that Er substitutes for Al in all the studied samples and the increase in Er concentration from 0.5 to 3.6 at.% is not accompanied by formation of ErN, Er2O3 or Er clusters. Simultaneously recorded X-ray Absorption Near Edge Structure (XANES) spectra verify that the bonding configuration of Er is similar in all studied samples. The Er-N distance is constant at 2.18-2.19 Å i.e. approximately 15% larger than the Al-N bondlength, revealing that the introduction of Er in the cation sublattice causes considerable local distortion. The Debye-Waller factor, which measures the static disorder, of the second nearest shell of Al neighbors, has a local minimum for the sample containing 1% Er that coincides with the highest photoluminescence efficiency of the sample set.

AB - The structural properties of Er-doped AlNO epilayers grown by radio frequency magnetron sputtering were studied by Extended X-ray Absorption Fine Structure (EXAFS) spectra recorded at the Er L3 edge. The analysis revealed that Er substitutes for Al in all the studied samples and the increase in Er concentration from 0.5 to 3.6 at.% is not accompanied by formation of ErN, Er2O3 or Er clusters. Simultaneously recorded X-ray Absorption Near Edge Structure (XANES) spectra verify that the bonding configuration of Er is similar in all studied samples. The Er-N distance is constant at 2.18-2.19 Å i.e. approximately 15% larger than the Al-N bondlength, revealing that the introduction of Er in the cation sublattice causes considerable local distortion. The Debye-Waller factor, which measures the static disorder, of the second nearest shell of Al neighbors, has a local minimum for the sample containing 1% Er that coincides with the highest photoluminescence efficiency of the sample set.

KW - EXAFS

KW - AlN

KW - Er

KW - rare earth

KW - semiconductor doping

UR - https://aip.scitation.org/doi/10.1063/1.5036614

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DO - 10.1063/1.5036614

M3 - Article

VL - 124

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

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