Extended X-ray absorption fine structure study of Er bonding in AlNO:Erx films with x <= 3.6%

M. Katsikini, V. Katchkanov, P. Boulet, P. R. Edwards, K. P. O'Donnell, V. Brien

Research output: Contribution to journalArticle

Abstract

The structural properties of Er-doped AlNO epilayers grown by radio frequency magnetron sputtering were studied by Extended X-ray Absorption Fine Structure (EXAFS) spectra recorded at the Er L3 edge. The analysis revealed that Er substitutes for Al in all the studied samples and the increase in Er concentration from 0.5 to 3.6 at.% is not accompanied by formation of ErN, Er2O3 or Er clusters. Simultaneously recorded X-ray Absorption Near Edge Structure (XANES) spectra verify that the bonding configuration of Er is similar in all studied samples. The Er-N distance is constant at 2.18-2.19 Å i.e. approximately 15% larger than the Al-N bondlength, revealing that the introduction of Er in the cation sublattice causes considerable local distortion. The Debye-Waller factor, which measures the static disorder, of the second nearest shell of Al neighbors, has a local minimum for the sample containing 1% Er that coincides with the highest photoluminescence efficiency of the sample set.
LanguageEnglish
Article number085705
Number of pages5
JournalJournal of Applied Physics
Volume124
Issue number8
DOIs
StatePublished - 28 Aug 2018

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fine structure
x rays
sublattices
radio frequencies
magnetron sputtering
disorders
substitutes
photoluminescence
cations
causes
configurations

Keywords

  • EXAFS
  • AlN
  • Er
  • rare earth
  • semiconductor doping

Cite this

@article{2814ca93c1694176ab4a58b59e593fc8,
title = "Extended X-ray absorption fine structure study of Er bonding in AlNO:Erx films with x <= 3.6{\%}",
abstract = "The structural properties of Er-doped AlNO epilayers grown by radio frequency magnetron sputtering were studied by Extended X-ray Absorption Fine Structure (EXAFS) spectra recorded at the Er L3 edge. The analysis revealed that Er substitutes for Al in all the studied samples and the increase in Er concentration from 0.5 to 3.6 at.{\%} is not accompanied by formation of ErN, Er2O3 or Er clusters. Simultaneously recorded X-ray Absorption Near Edge Structure (XANES) spectra verify that the bonding configuration of Er is similar in all studied samples. The Er-N distance is constant at 2.18-2.19 {\AA} i.e. approximately 15{\%} larger than the Al-N bondlength, revealing that the introduction of Er in the cation sublattice causes considerable local distortion. The Debye-Waller factor, which measures the static disorder, of the second nearest shell of Al neighbors, has a local minimum for the sample containing 1{\%} Er that coincides with the highest photoluminescence efficiency of the sample set.",
keywords = "EXAFS, AlN, Er, rare earth, semiconductor doping",
author = "M. Katsikini and V. Katchkanov and P. Boulet and Edwards, {P. R.} and O'Donnell, {K. P.} and V. Brien",
year = "2018",
month = "8",
day = "28",
doi = "10.1063/1.5036614",
language = "English",
volume = "124",
journal = "Journal of Applied Physics",
issn = "0021-8979",
number = "8",

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Extended X-ray absorption fine structure study of Er bonding in AlNO:Erx films with x <= 3.6%. / Katsikini, M.; Katchkanov, V.; Boulet, P.; Edwards, P. R.; O'Donnell, K. P.; Brien, V.

In: Journal of Applied Physics, Vol. 124, No. 8, 085705, 28.08.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Extended X-ray absorption fine structure study of Er bonding in AlNO:Erx films with x <= 3.6%

AU - Katsikini,M.

AU - Katchkanov,V.

AU - Boulet,P.

AU - Edwards,P. R.

AU - O'Donnell,K. P.

AU - Brien,V.

PY - 2018/8/28

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N2 - The structural properties of Er-doped AlNO epilayers grown by radio frequency magnetron sputtering were studied by Extended X-ray Absorption Fine Structure (EXAFS) spectra recorded at the Er L3 edge. The analysis revealed that Er substitutes for Al in all the studied samples and the increase in Er concentration from 0.5 to 3.6 at.% is not accompanied by formation of ErN, Er2O3 or Er clusters. Simultaneously recorded X-ray Absorption Near Edge Structure (XANES) spectra verify that the bonding configuration of Er is similar in all studied samples. The Er-N distance is constant at 2.18-2.19 Å i.e. approximately 15% larger than the Al-N bondlength, revealing that the introduction of Er in the cation sublattice causes considerable local distortion. The Debye-Waller factor, which measures the static disorder, of the second nearest shell of Al neighbors, has a local minimum for the sample containing 1% Er that coincides with the highest photoluminescence efficiency of the sample set.

AB - The structural properties of Er-doped AlNO epilayers grown by radio frequency magnetron sputtering were studied by Extended X-ray Absorption Fine Structure (EXAFS) spectra recorded at the Er L3 edge. The analysis revealed that Er substitutes for Al in all the studied samples and the increase in Er concentration from 0.5 to 3.6 at.% is not accompanied by formation of ErN, Er2O3 or Er clusters. Simultaneously recorded X-ray Absorption Near Edge Structure (XANES) spectra verify that the bonding configuration of Er is similar in all studied samples. The Er-N distance is constant at 2.18-2.19 Å i.e. approximately 15% larger than the Al-N bondlength, revealing that the introduction of Er in the cation sublattice causes considerable local distortion. The Debye-Waller factor, which measures the static disorder, of the second nearest shell of Al neighbors, has a local minimum for the sample containing 1% Er that coincides with the highest photoluminescence efficiency of the sample set.

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