Extended X-ray absorption fine structure studies of thulium doped GaN epilayers

V. Katchkanov, J. F.W. Mosselmans, S. Dalmasso, K. P. O'Donnell, S. Hernandez, K. Wang, R. W. Martin, O. Briot, N. Rousseau, G. Halambalakis, K. Lorenz, E. Alves

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

The local structure of Tm3+ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3 × 1015, 4 × 1015 cm-2 and 5 × 1015 cm-2. The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.

LanguageEnglish
Pages729-736
Number of pages8
JournalSuperlattices and Microstructures
Volume36
Issue number4-6
DOIs
Publication statusPublished - 1 Oct 2004
EventEuropean Materials Research Society 2004, Symposium L. InN - Strasbourg, France
Duration: 24 May 200428 May 2004

Fingerprint

Thulium
thulium
Epilayers
X ray absorption
fine structure
Ions
Doping (additives)
Ion implantation
x rays
Organic Chemicals
Organic chemicals
X ray analysis
Molecular beam epitaxy
Chemical vapor deposition
ions
Metals
Wavelength
metalorganic chemical vapor deposition
ion implantation
implantation

Keywords

  • x-ray absorption
  • thulium doped GaN epilayers
  • fine structure studies

Cite this

Katchkanov, V., Mosselmans, J. F. W., Dalmasso, S., O'Donnell, K. P., Hernandez, S., Wang, K., ... Alves, E. (2004). Extended X-ray absorption fine structure studies of thulium doped GaN epilayers. Superlattices and Microstructures, 36(4-6), 729-736. https://doi.org/10.1016/j.spmi.2004.09.029
Katchkanov, V. ; Mosselmans, J. F.W. ; Dalmasso, S. ; O'Donnell, K. P. ; Hernandez, S. ; Wang, K. ; Martin, R. W. ; Briot, O. ; Rousseau, N. ; Halambalakis, G. ; Lorenz, K. ; Alves, E. / Extended X-ray absorption fine structure studies of thulium doped GaN epilayers. In: Superlattices and Microstructures. 2004 ; Vol. 36, No. 4-6. pp. 729-736.
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abstract = "The local structure of Tm3+ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3 × 1015, 4 × 1015 cm-2 and 5 × 1015 cm-2. The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5{\%}, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2{\%} and 2.0{\%}, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4{\%}.",
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Katchkanov, V, Mosselmans, JFW, Dalmasso, S, O'Donnell, KP, Hernandez, S, Wang, K, Martin, RW, Briot, O, Rousseau, N, Halambalakis, G, Lorenz, K & Alves, E 2004, 'Extended X-ray absorption fine structure studies of thulium doped GaN epilayers' Superlattices and Microstructures, vol. 36, no. 4-6, pp. 729-736. https://doi.org/10.1016/j.spmi.2004.09.029

Extended X-ray absorption fine structure studies of thulium doped GaN epilayers. / Katchkanov, V.; Mosselmans, J. F.W.; Dalmasso, S.; O'Donnell, K. P.; Hernandez, S.; Wang, K.; Martin, R. W.; Briot, O.; Rousseau, N.; Halambalakis, G.; Lorenz, K.; Alves, E.

In: Superlattices and Microstructures, Vol. 36, No. 4-6, 01.10.2004, p. 729-736.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Extended X-ray absorption fine structure studies of thulium doped GaN epilayers

AU - Katchkanov, V.

AU - Mosselmans, J. F.W.

AU - Dalmasso, S.

AU - O'Donnell, K. P.

AU - Hernandez, S.

AU - Wang, K.

AU - Martin, R. W.

AU - Briot, O.

AU - Rousseau, N.

AU - Halambalakis, G.

AU - Lorenz, K.

AU - Alves, E.

PY - 2004/10/1

Y1 - 2004/10/1

N2 - The local structure of Tm3+ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3 × 1015, 4 × 1015 cm-2 and 5 × 1015 cm-2. The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.

AB - The local structure of Tm3+ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3 × 1015, 4 × 1015 cm-2 and 5 × 1015 cm-2. The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.

KW - x-ray absorption

KW - thulium doped GaN epilayers

KW - fine structure studies

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U2 - 10.1016/j.spmi.2004.09.029

DO - 10.1016/j.spmi.2004.09.029

M3 - Conference article

VL - 36

SP - 729

EP - 736

JO - Superlattices and Microstructures

T2 - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 4-6

ER -