Extended X-ray absorption fine structure studies of thulium doped GaN epilayers

V. Katchkanov, J. F.W. Mosselmans, S. Dalmasso, K. P. O'Donnell, S. Hernandez, K. Wang, R. W. Martin, O. Briot, N. Rousseau, G. Halambalakis, K. Lorenz, E. Alves

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10 Citations (Scopus)


The local structure of Tm3+ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3 × 1015, 4 × 1015 cm-2 and 5 × 1015 cm-2. The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.

Original languageEnglish
Pages (from-to)729-736
Number of pages8
JournalSuperlattices and Microstructures
Issue number4-6
Publication statusPublished - 1 Oct 2004
EventEuropean Materials Research Society 2004, Symposium L. InN - Strasbourg, France
Duration: 24 May 200428 May 2004


  • x-ray absorption
  • thulium doped GaN epilayers
  • fine structure studies


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