Extended X-ray absorption fine structure studies of GaN epilayers doped in situ with Er and Eu during molecular beam epitaxy

V. Katcnkanov*, J. F.W. Mosselmans, S. Dalmasso, K. P. O'Donnell, R. W. Martin, O. Briot, N. Rousseau, G. Halambalakis

*Corresponding author for this work

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