Extended X-ray absorption fine structure studies of GaN epilayers doped in situ with Er and Eu during molecular beam epitaxy

V. Katcnkanov, J. F.W. Mosselmans, S. Dalmasso, K. P. O'Donnell, R. W. Martin, O. Briot, N. Rousseau, G. Halambalakis

Research output: Contribution to journalConference article

Abstract

The local structure around Er and Eu atoms introduced into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure above the appropriate rare-earth X-ray absorption edge. The samples were doped in situ during growth by Molecular Beam Epitaxy. The formation of ErN clusters was found in samples with high average Er concentrations of 32±6% and 12.4±0.8%, estimated by Wavelength Dispersive X-ray analysis. When the average Er concentration is decreased to 6.0±0.2%, 1.6±0.2% and 0.17±0.02%, Er is found in localised clusters of ErGaN phase with high local Er content. Similar behaviour is observed for Eu-doped samples. For an average Eu concentration of 30.5±0.5% clusters of pure EuN occur. Decreasing the Eu concentration to 10.4±0.5% leads to EuGaN clusters with high local Eu content. However, for a sample with an Eu concentration of 14.2±0.5% clustering of Eu was not observed.

Original languageEnglish
Pages (from-to)435-440
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume798
DOIs
Publication statusPublished - 1 Dec 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: 1 Dec 20035 Dec 2003

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Keywords

  • Gallium nitride
  • energy gap
  • Erbium
  • Europium
  • metallorganic chemical vapor deposition
  • molecular beam epitaxy
  • semiconductor devices
  • semiconductor doping
  • thermodynamic stability

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