Extended X-ray absorption fine structure studies of GaN epilayers doped with Er

V  Katchkanov; J F W  Mosselmans; K P  O'Donnell; E  Nogales; S  Hernandez; R W  Martin; A  Steckl; D S  Lee

doi:10.1016/j.optmat.2005.09.023

Extended X-ray absorption fine structure studies of GaN epilayers doped with Er

V Katchkanov, J F W Mosselmans, K P O'Donnell, E Nogales, S Hernandez, R W Martin, A Steckl, D S Lee

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Abstract

The structural properties of Er doped GaN epilayers were studied by means of extended X-ray absorption fine structure (EXAFS) measured at the Er L-III and Ga K-edges. The samples were doped with Er in-situ during growth by molecular beam epitaxy (MBE). The Ga local structure was found to be the same in all samples studied. Er L-III-edge EXAFS showed that when growth conditions were gradually changed from Ga-rich to Ga-poor, an increase in Er concentration from 0.15 at.% to 0.64 at.% is accompanied by the sequential formation of ErGaN, ErGaN clusters with locally high Er content and finally a pure ErN component. This study indicates that Er incorporation into GaN is enhanced under Ga-poor conditions, at the expense of the formation of Er-rich clusters and ErN precipitates. (c) 2005 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	785-789
Number of pages	5
Journal	Optical Materials
Volume	28
Issue number	6-7
DOIs	https://doi.org/10.1016/j.optmat.2005.09.023
Publication status	Published - 1 May 2006

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Keywords

absorption
optical materials
molecular beams

Cite this

Katchkanov, V., Mosselmans, J. F. W., O'Donnell, K. P., Nogales, E., Hernandez, S., Martin, R. W., ... Lee, D. S. (2006). Extended X-ray absorption fine structure studies of GaN epilayers doped with Er. Optical Materials, 28(6-7), 785-789. https://doi.org/10.1016/j.optmat.2005.09.023

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title = "Extended X-ray absorption fine structure studies of GaN epilayers doped with Er",

abstract = "The structural properties of Er doped GaN epilayers were studied by means of extended X-ray absorption fine structure (EXAFS) measured at the Er L-III and Ga K-edges. The samples were doped with Er in-situ during growth by molecular beam epitaxy (MBE). The Ga local structure was found to be the same in all samples studied. Er L-III-edge EXAFS showed that when growth conditions were gradually changed from Ga-rich to Ga-poor, an increase in Er concentration from 0.15 at.{\%} to 0.64 at.{\%} is accompanied by the sequential formation of ErGaN, ErGaN clusters with locally high Er content and finally a pure ErN component. This study indicates that Er incorporation into GaN is enhanced under Ga-poor conditions, at the expense of the formation of Er-rich clusters and ErN precipitates. (c) 2005 Elsevier B.V. All rights reserved.",

keywords = "absorption, optical materials, molecular beams",

author = "V Katchkanov and Mosselmans, {J F W} and O'Donnell, {K P} and E Nogales and S Hernandez and Martin, {R W} and A Steckl and Lee, {D S}",

note = "Meeting of the European-Materials-Research-Society, Strasbourg, FRANCE, MAY 30-JUN 03, 2005",

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doi = "10.1016/j.optmat.2005.09.023",

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T1 - Extended X-ray absorption fine structure studies of GaN epilayers doped with Er

AU - Katchkanov, V

AU - Mosselmans, J F W

AU - O'Donnell, K P

AU - Nogales, E

AU - Hernandez, S

AU - Martin, R W

AU - Steckl, A

AU - Lee, D S

N1 - Meeting of the European-Materials-Research-Society, Strasbourg, FRANCE, MAY 30-JUN 03, 2005

PY - 2006/5/1

Y1 - 2006/5/1

N2 - The structural properties of Er doped GaN epilayers were studied by means of extended X-ray absorption fine structure (EXAFS) measured at the Er L-III and Ga K-edges. The samples were doped with Er in-situ during growth by molecular beam epitaxy (MBE). The Ga local structure was found to be the same in all samples studied. Er L-III-edge EXAFS showed that when growth conditions were gradually changed from Ga-rich to Ga-poor, an increase in Er concentration from 0.15 at.% to 0.64 at.% is accompanied by the sequential formation of ErGaN, ErGaN clusters with locally high Er content and finally a pure ErN component. This study indicates that Er incorporation into GaN is enhanced under Ga-poor conditions, at the expense of the formation of Er-rich clusters and ErN precipitates. (c) 2005 Elsevier B.V. All rights reserved.

AB - The structural properties of Er doped GaN epilayers were studied by means of extended X-ray absorption fine structure (EXAFS) measured at the Er L-III and Ga K-edges. The samples were doped with Er in-situ during growth by molecular beam epitaxy (MBE). The Ga local structure was found to be the same in all samples studied. Er L-III-edge EXAFS showed that when growth conditions were gradually changed from Ga-rich to Ga-poor, an increase in Er concentration from 0.15 at.% to 0.64 at.% is accompanied by the sequential formation of ErGaN, ErGaN clusters with locally high Er content and finally a pure ErN component. This study indicates that Er incorporation into GaN is enhanced under Ga-poor conditions, at the expense of the formation of Er-rich clusters and ErN precipitates. (c) 2005 Elsevier B.V. All rights reserved.

KW - absorption

KW - optical materials

KW - molecular beams

U2 - 10.1016/j.optmat.2005.09.023

DO - 10.1016/j.optmat.2005.09.023

M3 - Article

VL - 28

SP - 785

EP - 789

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

IS - 6-7

ER -

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10.1016/j.optmat.2005.09.023