Extended X-ray absorption fine structure studies of GaN epilayers doped with Er

V Katchkanov, J F W Mosselmans, K P O'Donnell, E Nogales, S Hernandez, R W Martin, A Steckl, D S Lee

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10 Citations (Scopus)


The structural properties of Er doped GaN epilayers were studied by means of extended X-ray absorption fine structure (EXAFS) measured at the Er L-III and Ga K-edges. The samples were doped with Er in-situ during growth by molecular beam epitaxy (MBE). The Ga local structure was found to be the same in all samples studied. Er L-III-edge EXAFS showed that when growth conditions were gradually changed from Ga-rich to Ga-poor, an increase in Er concentration from 0.15 at.% to 0.64 at.% is accompanied by the sequential formation of ErGaN, ErGaN clusters with locally high Er content and finally a pure ErN component. This study indicates that Er incorporation into GaN is enhanced under Ga-poor conditions, at the expense of the formation of Er-rich clusters and ErN precipitates. (c) 2005 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)785-789
Number of pages5
JournalOptical Materials
Issue number6-7
Publication statusPublished - 1 May 2006


  • absorption
  • optical materials
  • molecular beams


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