Experimental comparison of multiple quantum well GaInNAs vertical-cavity SOAs

N. Laurand; S. Calvez; M.D. Dawson; A.C. Bryce; T. Jouhti; J. Kontinnen; M. Pessa

doi:10.1109/LEOS.2004.1363381

Experimental comparison of multiple quantum well GaInNAs vertical-cavity SOAs

N. Laurand, S. Calvez, M.D. Dawson, A.C. Bryce, T. Jouhti, J. Kontinnen, M. Pessa

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

This paper presents the gain characterization and efficiency comparison of two reflection-format 1.3 μm GaInNAs vertical-cavity semiconductor optical amplifiers (VCSOAs) having six and fifteen quantum-wells. A maximum gain operation of 19 dB and 17 dB, respectively, is reported.

Original language	English
Title of host publication	Lasers and Electro-Optics Society, 2004. LEOS 2004
Publisher	IEEE
Pages	599-600
Number of pages	1
Volume	2
ISBN (Print)	9780780385573
DOIs	https://doi.org/10.1109/LEOS.2004.1363381
Publication status	Published - 11 Nov 2004

Keywords

gallium arsenide
gallium compounds
indium compounds
laser cavity resonators
light reflection
quantum well lasers
semiconductor optical amplifiers
surface emitting lasers

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10.1109/LEOS.2004.1363381

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title = "Experimental comparison of multiple quantum well GaInNAs vertical-cavity SOAs",

abstract = "This paper presents the gain characterization and efficiency comparison of two reflection-format 1.3 μm GaInNAs vertical-cavity semiconductor optical amplifiers (VCSOAs) having six and fifteen quantum-wells. A maximum gain operation of 19 dB and 17 dB, respectively, is reported.",

keywords = "gallium arsenide, gallium compounds, indium compounds, laser cavity resonators, light reflection, quantum well lasers, semiconductor optical amplifiers, surface emitting lasers",

author = "N. Laurand and S. Calvez and M.D. Dawson and A.C. Bryce and T. Jouhti and J. Kontinnen and M. Pessa",

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T1 - Experimental comparison of multiple quantum well GaInNAs vertical-cavity SOAs

AU - Laurand, N.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Bryce, A.C.

AU - Jouhti, T.

AU - Kontinnen, J.

AU - Pessa, M.

PY - 2004/11/11

Y1 - 2004/11/11

N2 - This paper presents the gain characterization and efficiency comparison of two reflection-format 1.3 μm GaInNAs vertical-cavity semiconductor optical amplifiers (VCSOAs) having six and fifteen quantum-wells. A maximum gain operation of 19 dB and 17 dB, respectively, is reported.

AB - This paper presents the gain characterization and efficiency comparison of two reflection-format 1.3 μm GaInNAs vertical-cavity semiconductor optical amplifiers (VCSOAs) having six and fifteen quantum-wells. A maximum gain operation of 19 dB and 17 dB, respectively, is reported.

KW - gallium arsenide

KW - gallium compounds

KW - indium compounds

KW - laser cavity resonators

KW - light reflection

KW - quantum well lasers

KW - semiconductor optical amplifiers

KW - surface emitting lasers

UR - http://dx.doi.org/10.1109/LEOS.2004.1363381

U2 - 10.1109/LEOS.2004.1363381

DO - 10.1109/LEOS.2004.1363381

M3 - Chapter

SN - 9780780385573

VL - 2

SP - 599

EP - 600

BT - Lasers and Electro-Optics Society, 2004. LEOS 2004

PB - IEEE

ER -

Experimental comparison of multiple quantum well GaInNAs vertical-cavity SOAs

Abstract

Keywords

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