Experimental comparison of multiple quantum well GaInNAs vertical-cavity SOAs

N. Laurand, S. Calvez, M.D. Dawson, A.C. Bryce, T. Jouhti, J. Kontinnen, M. Pessa

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This paper presents the gain characterization and efficiency comparison of two reflection-format 1.3 μm GaInNAs vertical-cavity semiconductor optical amplifiers (VCSOAs) having six and fifteen quantum-wells. A maximum gain operation of 19 dB and 17 dB, respectively, is reported.
Original languageEnglish
Title of host publicationLasers and Electro-Optics Society, 2004. LEOS 2004
PublisherIEEE
Pages599-600
Number of pages1
Volume2
ISBN (Print)9780780385573
DOIs
Publication statusPublished - 11 Nov 2004

Keywords

  • gallium arsenide
  • gallium compounds
  • indium compounds
  • laser cavity resonators
  • light reflection
  • quantum well lasers
  • semiconductor optical amplifiers
  • surface emitting lasers

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