Excitons in PL Spectra of Cu(In,Ga)Se2 Single Crystals

E. Skidchenko, M. V. Yakushev, L. Spasevski, P. R. Edwards, M. A. Sulimov, R. W. Martin

Research output: Contribution to journalArticle

Abstract

Abstract: A photoluminescence (PL) study of Cu(In,Ga)Se2 (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7 and 12% and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7 and 12% Ga content are clearly observed, analyzed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12% Ga. The presence of the excitons demonstrated a high structural quality of the material.

LanguageEnglish
Pages918-924
Number of pages7
JournalPhysics of the Solid State
Volume61
Issue number5
DOIs
Publication statusPublished - 1 May 2019

Fingerprint

Excitons
Photoluminescence
excitons
Single crystals
photoluminescence
single crystals
Energy dispersive spectroscopy
unity
Activation energy
activation energy
temperature dependence
spectroscopy
excitation
LDS 751
Temperature
energy

Keywords

  • photoluminescence
  • PL
  • Cu(In,Ga)Se2 single crystals
  • excitons

Cite this

Skidchenko, E. ; Yakushev, M. V. ; Spasevski, L. ; Edwards, P. R. ; Sulimov, M. A. ; Martin, R. W. / Excitons in PL Spectra of Cu(In,Ga)Se2 Single Crystals. In: Physics of the Solid State. 2019 ; Vol. 61, No. 5. pp. 918-924.
@article{d9dcdc6004ed40d687f5756d312e6b51,
title = "Excitons in PL Spectra of Cu(In,Ga)Se2 Single Crystals",
abstract = "Abstract: A photoluminescence (PL) study of Cu(In,Ga)Se2 (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7 and 12{\%} and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7 and 12{\%} Ga content are clearly observed, analyzed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12{\%} Ga. The presence of the excitons demonstrated a high structural quality of the material.",
keywords = "photoluminescence, PL, Cu(In,Ga)Se2 single crystals, excitons",
author = "E. Skidchenko and Yakushev, {M. V.} and L. Spasevski and Edwards, {P. R.} and Sulimov, {M. A.} and Martin, {R. W.}",
year = "2019",
month = "5",
day = "1",
doi = "10.1134/S1063783419050330",
language = "English",
volume = "61",
pages = "918--924",
journal = "Physics of the Solid State",
issn = "1063-7834",
number = "5",

}

Excitons in PL Spectra of Cu(In,Ga)Se2 Single Crystals. / Skidchenko, E.; Yakushev, M. V.; Spasevski, L.; Edwards, P. R.; Sulimov, M. A.; Martin, R. W.

In: Physics of the Solid State, Vol. 61, No. 5, 01.05.2019, p. 918-924.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Excitons in PL Spectra of Cu(In,Ga)Se2 Single Crystals

AU - Skidchenko, E.

AU - Yakushev, M. V.

AU - Spasevski, L.

AU - Edwards, P. R.

AU - Sulimov, M. A.

AU - Martin, R. W.

PY - 2019/5/1

Y1 - 2019/5/1

N2 - Abstract: A photoluminescence (PL) study of Cu(In,Ga)Se2 (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7 and 12% and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7 and 12% Ga content are clearly observed, analyzed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12% Ga. The presence of the excitons demonstrated a high structural quality of the material.

AB - Abstract: A photoluminescence (PL) study of Cu(In,Ga)Se2 (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7 and 12% and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7 and 12% Ga content are clearly observed, analyzed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12% Ga. The presence of the excitons demonstrated a high structural quality of the material.

KW - photoluminescence

KW - PL

KW - Cu(In,Ga)Se2 single crystals

KW - excitons

UR - http://www.scopus.com/inward/record.url?scp=85066962825&partnerID=8YFLogxK

U2 - 10.1134/S1063783419050330

DO - 10.1134/S1063783419050330

M3 - Article

VL - 61

SP - 918

EP - 924

JO - Physics of the Solid State

T2 - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 5

ER -