Excitons in PL Spectra of Cu(In,Ga)Se2 Single Crystals

E. Skidchenko; M. V. Yakushev; L. Spasevski; P. R. Edwards; M. A. Sulimov; R. W. Martin

doi:10.1134/S1063783419050330

Excitons in PL Spectra of Cu(In,Ga)Se₂ Single Crystals

E. Skidchenko, M. V. Yakushev, L. Spasevski, P. R. Edwards, M. A. Sulimov, R. W. Martin

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Abstract: A photoluminescence (PL) study of Cu(In,Ga)Se₂ (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7 and 12% and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7 and 12% Ga content are clearly observed, analyzed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12% Ga. The presence of the excitons demonstrated a high structural quality of the material.

Original language	English
Pages (from-to)	918-924
Number of pages	7
Journal	Physics of the Solid State
Volume	61
Issue number	5
DOIs	https://doi.org/10.1134/S1063783419050330
Publication status	Published - 1 May 2019

Keywords

photoluminescence
PL
Cu(In,Ga)Se2 single crystals
excitons

Access to Document

10.1134/S1063783419050330

Cite this

@article{d9dcdc6004ed40d687f5756d312e6b51,

title = "Excitons in PL Spectra of Cu(In,Ga)Se2 Single Crystals",

abstract = "Abstract: A photoluminescence (PL) study of Cu(In,Ga)Se2 (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7 and 12% and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7 and 12% Ga content are clearly observed, analyzed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12% Ga. The presence of the excitons demonstrated a high structural quality of the material.",

keywords = "photoluminescence, PL, Cu(In,Ga)Se2 single crystals, excitons",

author = "E. Skidchenko and Yakushev, {M. V.} and L. Spasevski and Edwards, {P. R.} and Sulimov, {M. A.} and Martin, {R. W.}",

year = "2019",

month = may,

day = "1",

doi = "10.1134/S1063783419050330",

language = "English",

volume = "61",

pages = "918--924",

journal = "Physics of the Solid State",

issn = "1063-7834",

number = "5",

}

TY - JOUR

T1 - Excitons in PL Spectra of Cu(In,Ga)Se2 Single Crystals

AU - Skidchenko, E.

AU - Yakushev, M. V.

AU - Spasevski, L.

AU - Edwards, P. R.

AU - Sulimov, M. A.

AU - Martin, R. W.

PY - 2019/5/1

Y1 - 2019/5/1

N2 - Abstract: A photoluminescence (PL) study of Cu(In,Ga)Se2 (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7 and 12% and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7 and 12% Ga content are clearly observed, analyzed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12% Ga. The presence of the excitons demonstrated a high structural quality of the material.

AB - Abstract: A photoluminescence (PL) study of Cu(In,Ga)Se2 (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7 and 12% and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7 and 12% Ga content are clearly observed, analyzed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12% Ga. The presence of the excitons demonstrated a high structural quality of the material.

KW - photoluminescence

KW - PL

KW - Cu(In,Ga)Se2 single crystals

KW - excitons

UR - http://www.scopus.com/inward/record.url?scp=85066962825&partnerID=8YFLogxK

U2 - 10.1134/S1063783419050330

DO - 10.1134/S1063783419050330

M3 - Article

AN - SCOPUS:85066962825

SN - 1063-7834

VL - 61

SP - 918

EP - 924

JO - Physics of the Solid State

JF - Physics of the Solid State

IS - 5

ER -

Excitons in PL Spectra of Cu(In,Ga)Se₂ Single Crystals

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this