Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries

Idris A. Ajia, P. R. Edwards, Z. Liu, J. C. Yan, R. W. Martin, I. S. Roqan

Research output: Contribution to journalArticle

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Abstract

AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.
LanguageEnglish
Article number122111
Number of pages5
JournalApplied Physics Letters
Volume105
Issue number12
Early online date25 Sep 2014
DOIs
Publication statusPublished - Sep 2014

Fingerprint

grain boundaries
quantum wells
cathodoluminescence
metalorganic chemical vapor deposition
tendencies
excitons
photoluminescence
temperature
energy

Keywords

  • multi-quantum-wells
  • MQW
  • AlN-rich grains
  • excitonic localization
  • AlGaN/AlGaN MQW

Cite this

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title = "Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries",
abstract = "AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.",
keywords = "multi-quantum-wells, MQW, AlN-rich grains, excitonic localization, AlGaN/AlGaN MQW",
author = "Ajia, {Idris A.} and Edwards, {P. R.} and Z. Liu and Yan, {J. C.} and Martin, {R. W.} and Roqan, {I. S.}",
note = ". Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",
year = "2014",
month = "9",
doi = "10.1063/1.4896681",
language = "English",
volume = "105",
journal = "Applied Physics Letters",
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Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries. / Ajia, Idris A.; Edwards, P. R.; Liu, Z.; Yan, J. C.; Martin, R. W.; Roqan, I. S.

In: Applied Physics Letters, Vol. 105, No. 12, 122111, 09.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries

AU - Ajia, Idris A.

AU - Edwards, P. R.

AU - Liu, Z.

AU - Yan, J. C.

AU - Martin, R. W.

AU - Roqan, I. S.

N1 - . Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2014/9

Y1 - 2014/9

N2 - AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.

AB - AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.

KW - multi-quantum-wells

KW - MQW

KW - AlN-rich grains

KW - excitonic localization

KW - AlGaN/AlGaN MQW

UR - http://scitation.aip.org/content/aip/journal/apl

U2 - 10.1063/1.4896681

DO - 10.1063/1.4896681

M3 - Article

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JO - Applied Physics Letters

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