Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries

Idris A. Ajia; P. R. Edwards; Z. Liu; J. C. Yan; R. W. Martin; I. S. Roqan

doi:10.1063/1.4896681

Excitonic localization in AlN-rich Al_xGa_1-xN/Al_yGa_1-yN multi-quantum-well grain boundaries

Idris A. Ajia, P. R. Edwards, Z. Liu, J. C. Yan, R. W. Martin, I. S. Roqan

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Abstract

AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.

Original language	English
Article number	122111
Number of pages	5
Journal	Applied Physics Letters
Volume	105
Issue number	12
Early online date	25 Sept 2014
DOIs	https://doi.org/10.1063/1.4896681
Publication status	Published - Sept 2014

Keywords

multi-quantum-wells
MQW
AlN-rich grains
excitonic localization
AlGaN/AlGaN MQW

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10.1063/1.4896681

Ajia-etal-APL2014-excitonic-localization-multi-quantum-well-grain-boundariesFinal published version, 1.3 MB

Cite this

@article{966790ed857f4a72a0e30b8b675b1720,

title = "Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries",

abstract = "AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.",

keywords = "multi-quantum-wells, MQW, AlN-rich grains, excitonic localization, AlGaN/AlGaN MQW",

author = "Ajia, {Idris A.} and Edwards, {P. R.} and Z. Liu and Yan, {J. C.} and Martin, {R. W.} and Roqan, {I. S.}",

note = ". Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "2014",

month = sep,

doi = "10.1063/1.4896681",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "12",

}

TY - JOUR

T1 - Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries

AU - Ajia, Idris A.

AU - Edwards, P. R.

AU - Liu, Z.

AU - Yan, J. C.

AU - Martin, R. W.

AU - Roqan, I. S.

N1 - . Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2014/9

Y1 - 2014/9

N2 - AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.

AB - AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.

KW - multi-quantum-wells

KW - MQW

KW - AlN-rich grains

KW - excitonic localization

KW - AlGaN/AlGaN MQW

UR - http://scitation.aip.org/content/aip/journal/apl

U2 - 10.1063/1.4896681

DO - 10.1063/1.4896681

M3 - Article

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122111

ER -

Excitonic localization in AlN-rich Al_xGa_1-xN/Al_yGa_1-yN multi-quantum-well grain boundaries

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Keywords

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Gallium nitride enabled hybrid and flexible photonics

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Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries

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Gallium nitride enabled hybrid and flexible photonics

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Excitonic localization in AlN-rich Al_xGa_1-xN/Al_yGa_1-yN multi-quantum-well grain boundaries