Exciton localization and the Stokes' shift in InGaN epilayers

R. W. Martin; P. G. Middleton; K. P. O'Donnell; W. Van Der Stricht

doi:10.1063/1.123275

Exciton localization and the Stokes' shift in InGaN epilayers

R. W. Martin^*, P. G. Middleton, K. P. O'Donnell, W. Van Der Stricht

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

299 Citations (Scopus)

Abstract

We report a comparative study of the emission and absorption spectra of a range of commercial InGaN light-emitting diodes and high-quality epilayers. A working definition of the form of the absorption edge for alloys is proposed, which allows a unique definition of the Stokes' shift. A linear dependence of the Stokes' shift on the emission peak energy is then demonstrated for InGaN using experimental spectra of both diode and epilayer samples, supplemented by data from the literature. In addition, the broadening of the absorption edge is shown to increase as the emission peak energy decreases. These results are discussed in terms of the localization of excitons at highly indium-rich quantum dots within a phase-segregated alloy.

Original language	English
Pages (from-to)	263-265
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	2
DOIs	https://doi.org/10.1063/1.123275
Publication status	Published - 5 Jan 1999

Keywords

InGaN epilayers
light emitting diode
Stokes' shift

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10.1063/1.123275

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title = "Exciton localization and the Stokes' shift in InGaN epilayers",

abstract = "We report a comparative study of the emission and absorption spectra of a range of commercial InGaN light-emitting diodes and high-quality epilayers. A working definition of the form of the absorption edge for alloys is proposed, which allows a unique definition of the Stokes' shift. A linear dependence of the Stokes' shift on the emission peak energy is then demonstrated for InGaN using experimental spectra of both diode and epilayer samples, supplemented by data from the literature. In addition, the broadening of the absorption edge is shown to increase as the emission peak energy decreases. These results are discussed in terms of the localization of excitons at highly indium-rich quantum dots within a phase-segregated alloy.",

keywords = "InGaN epilayers, light emitting diode, Stokes' shift",

author = "Martin, {R. W.} and Middleton, {P. G.} and O'Donnell, {K. P.} and {Van Der Stricht}, W.",

year = "1999",

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T1 - Exciton localization and the Stokes' shift in InGaN epilayers

AU - Martin, R. W.

AU - Middleton, P. G.

AU - O'Donnell, K. P.

AU - Van Der Stricht, W.

PY - 1999/1/5

Y1 - 1999/1/5

N2 - We report a comparative study of the emission and absorption spectra of a range of commercial InGaN light-emitting diodes and high-quality epilayers. A working definition of the form of the absorption edge for alloys is proposed, which allows a unique definition of the Stokes' shift. A linear dependence of the Stokes' shift on the emission peak energy is then demonstrated for InGaN using experimental spectra of both diode and epilayer samples, supplemented by data from the literature. In addition, the broadening of the absorption edge is shown to increase as the emission peak energy decreases. These results are discussed in terms of the localization of excitons at highly indium-rich quantum dots within a phase-segregated alloy.

AB - We report a comparative study of the emission and absorption spectra of a range of commercial InGaN light-emitting diodes and high-quality epilayers. A working definition of the form of the absorption edge for alloys is proposed, which allows a unique definition of the Stokes' shift. A linear dependence of the Stokes' shift on the emission peak energy is then demonstrated for InGaN using experimental spectra of both diode and epilayer samples, supplemented by data from the literature. In addition, the broadening of the absorption edge is shown to increase as the emission peak energy decreases. These results are discussed in terms of the localization of excitons at highly indium-rich quantum dots within a phase-segregated alloy.

KW - InGaN epilayers

KW - light emitting diode

KW - Stokes' shift

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U2 - 10.1063/1.123275

DO - 10.1063/1.123275

M3 - Article

AN - SCOPUS:0001172399

SN - 0003-6951

VL - 74

SP - 263

EP - 265

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Exciton localization and the Stokes' shift in InGaN epilayers

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Keywords

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