Exciton binding energies in II-VI compound strained layer superlattices

F. Yang, P. J. Parbrook, C. Trager, B. Henderson, K. P. O'Donnell, P. J. Wright, B. Cockayne

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

II-VI strained-layer superlattices are very efficient emitters of visible light. The dependence of the luminescence intensity on the excitation power density allows us to characterise the recombination processes involved in the emission. At low temperatures excitonic processes are dominant whereas electron-hole recombinations feature at room temperature. No special evidence of the dual nature of the emission is observed at intermediate temperatures because the optical transitions are broadened by well-width fluctuations. In spite of this we may estimate the exciton binding energy from the temperature dependence of the photoluminescence intensity, as long as the photoluminescence remains excitonic. This is the case for narrow wells in CdSZnS superlattices over the temperature range zero to room temperature. The estimated exciton binding energy measured in this way approaches the two dimensional limit but does not exceed it.

LanguageEnglish
Pages461-465
Number of pages5
JournalSuperlattices and Microstructures
Volume9
Issue number4
DOIs
Publication statusPublished - 1 Jan 1991

Fingerprint

Superlattices
Binding energy
Excitons
superlattices
binding energy
excitons
photoluminescence
room temperature
optical transition
radiant flux density
emitters
luminescence
Temperature
temperature dependence
temperature
Photoluminescence
estimates
excitation
Optical transitions
LDS 751

Keywords

  • strained layer superlattice
  • luminescence
  • exciton luminescence

Cite this

Yang, F. ; Parbrook, P. J. ; Trager, C. ; Henderson, B. ; O'Donnell, K. P. ; Wright, P. J. ; Cockayne, B. / Exciton binding energies in II-VI compound strained layer superlattices. In: Superlattices and Microstructures. 1991 ; Vol. 9, No. 4. pp. 461-465.
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Exciton binding energies in II-VI compound strained layer superlattices. / Yang, F.; Parbrook, P. J.; Trager, C.; Henderson, B.; O'Donnell, K. P.; Wright, P. J.; Cockayne, B.

In: Superlattices and Microstructures, Vol. 9, No. 4, 01.01.1991, p. 461-465.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Exciton binding energies in II-VI compound strained layer superlattices

AU - Yang, F.

AU - Parbrook, P. J.

AU - Trager, C.

AU - Henderson, B.

AU - O'Donnell, K. P.

AU - Wright, P. J.

AU - Cockayne, B.

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AB - II-VI strained-layer superlattices are very efficient emitters of visible light. The dependence of the luminescence intensity on the excitation power density allows us to characterise the recombination processes involved in the emission. At low temperatures excitonic processes are dominant whereas electron-hole recombinations feature at room temperature. No special evidence of the dual nature of the emission is observed at intermediate temperatures because the optical transitions are broadened by well-width fluctuations. In spite of this we may estimate the exciton binding energy from the temperature dependence of the photoluminescence intensity, as long as the photoluminescence remains excitonic. This is the case for narrow wells in CdSZnS superlattices over the temperature range zero to room temperature. The estimated exciton binding energy measured in this way approaches the two dimensional limit but does not exceed it.

KW - strained layer superlattice

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KW - exciton luminescence

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