Excited states of the A free exciton in CuInS2

M.V. Yakushev, R.W. Martin, A.V. Mudryi, A.V. Ivaniukovich

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

High quality CuInS2 single crystals, grown by the traveling heater method in an indium solvent, were studied using reflectance and photoluminescence at 4.2 K. The first, EAn=2=1.5494 eV, and second, EAn=3=1.5532 eV, excited states of the A free exciton have been observed in the photoluminescence spectra. Accurate values of the A exciton binding energy EFE A =18.5 meV and Bohr radius aB A=3.8 nm, bandgap Eg=1.5540 eV at 4.2 K and static dielectric constant =10.2 have been derived assuming a hydrogenic model.
Original languageEnglish
JournalApplied Physics Letters
Volume92
Issue number11
DOIs
Publication statusPublished - 17 Mar 2008

Keywords

  • exciton
  • CuInS2
  • crystals

Projects

Cite this