Excited states of the A free exciton in CuInS2

M.V. Yakushev, R.W. Martin, A.V. Mudryi, A.V. Ivaniukovich

Research output: Contribution to journalArticle

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Abstract

High quality CuInS2 single crystals, grown by the traveling heater method in an indium solvent, were studied using reflectance and photoluminescence at 4.2 K. The first, EAn=2=1.5494 eV, and second, EAn=3=1.5532 eV, excited states of the A free exciton have been observed in the photoluminescence spectra. Accurate values of the A exciton binding energy EFE A =18.5 meV and Bohr radius aB A=3.8 nm, bandgap Eg=1.5540 eV at 4.2 K and static dielectric constant =10.2 have been derived assuming a hydrogenic model.
LanguageEnglish
JournalApplied Physics Letters
Volume92
Issue number11
DOIs
Publication statusPublished - 17 Mar 2008

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excitons
heaters
excitation
indium
binding energy
permittivity
reflectance
photoluminescence
radii
single crystals

Keywords

  • exciton
  • CuInS2
  • crystals

Cite this

Yakushev, M.V. ; Martin, R.W. ; Mudryi, A.V. ; Ivaniukovich, A.V. / Excited states of the A free exciton in CuInS2. In: Applied Physics Letters. 2008 ; Vol. 92, No. 11.
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Excited states of the A free exciton in CuInS2. / Yakushev, M.V.; Martin, R.W.; Mudryi, A.V.; Ivaniukovich, A.V.

In: Applied Physics Letters, Vol. 92, No. 11, 17.03.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Excited states of the A free exciton in CuInS2

AU - Yakushev, M.V.

AU - Martin, R.W.

AU - Mudryi, A.V.

AU - Ivaniukovich, A.V.

PY - 2008/3/17

Y1 - 2008/3/17

N2 - High quality CuInS2 single crystals, grown by the traveling heater method in an indium solvent, were studied using reflectance and photoluminescence at 4.2 K. The first, EAn=2=1.5494 eV, and second, EAn=3=1.5532 eV, excited states of the A free exciton have been observed in the photoluminescence spectra. Accurate values of the A exciton binding energy EFE A =18.5 meV and Bohr radius aB A=3.8 nm, bandgap Eg=1.5540 eV at 4.2 K and static dielectric constant =10.2 have been derived assuming a hydrogenic model.

AB - High quality CuInS2 single crystals, grown by the traveling heater method in an indium solvent, were studied using reflectance and photoluminescence at 4.2 K. The first, EAn=2=1.5494 eV, and second, EAn=3=1.5532 eV, excited states of the A free exciton have been observed in the photoluminescence spectra. Accurate values of the A exciton binding energy EFE A =18.5 meV and Bohr radius aB A=3.8 nm, bandgap Eg=1.5540 eV at 4.2 K and static dielectric constant =10.2 have been derived assuming a hydrogenic model.

KW - exciton

KW - CuInS2

KW - crystals

UR - http://dx.doi.org/10.1063/1.2896301

U2 - 10.1063/1.2896301

DO - 10.1063/1.2896301

M3 - Article

VL - 92

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -