Excited states of the A free exciton in CuInS2

M.V. Yakushev, R.W. Martin, A.V. Mudryi, A.V. Ivaniukovich

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High quality CuInS2 single crystals, grown by the traveling heater method in an indium solvent, were studied using reflectance and photoluminescence at 4.2 K. The first, EAn=2=1.5494 eV, and second, EAn=3=1.5532 eV, excited states of the A free exciton have been observed in the photoluminescence spectra. Accurate values of the A exciton binding energy EFE A =18.5 meV and Bohr radius aB A=3.8 nm, bandgap Eg=1.5540 eV at 4.2 K and static dielectric constant =10.2 have been derived assuming a hydrogenic model.
Original languageEnglish
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 17 Mar 2008


  • exciton
  • CuInS2
  • crystals


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