Excitation power and temperature dependence of excitons in CuInSe2

F. Luckert, M. V. Yakushev, C. Faugeras, A. V. Karotki, A. V. Mudryi, R. W. Martin

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Excitonic recombination processes in high quality CuInSe2 single crystals have been studied by photoluminescence (PL) and reflectance spectroscopy as a function of excitation powers and temperature. Excitation power dependent measurements confirm the identification of well-resolved A and B free excitons in the PL spectra and analysis of the temperature quenching of these lines provides values for activation energies. These are found to vary from sample to sample, with values of 12.5 and 18.4meV for the A and B excitons, respectively, in the one showing the highest quality spectra. Analysis of the temperature and power dependent PL spectra from the bound excitonic lines, labelled M1, M2, and M3 appearing in multiplets points to a likely assignment of the hole involved in each case. The M1 excitons appear to involve a conduction band electron and a hole from the B valence band hole. In contrast, an A valence band hole appears to be involved for the M2 and M3 excitons. In addition, the M1 exciton multiplet seems to be due to the radiative recombination of excitons bound to shallow hydrogenic defects, whereas the excitons involved in M2 and M3 are bound to more complex defects. In contrast to the M1 exciton multiplet, the excitonic lines of M2 and M3 saturate at high excitation powers suggesting that the concentration of the defects involved is low. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709448]

LanguageEnglish
Article number093507
Number of pages8
JournalJournal of Applied Physics
Volume111
Issue number9
DOIs
Publication statusPublished - 1 May 2012

Fingerprint

excitons
temperature dependence
excitation
fine structure
photoluminescence
defects
valence
radiative recombination
temperature
conduction bands
quenching
activation energy
reflectance
single crystals
spectroscopy

Keywords

  • band-edge photoluminescence
  • acceptors
  • CulnSe2
  • luminescence
  • emission
  • defect physics
  • radiative recombination
  • chalcopyrite semiconductor
  • single-crystals
  • excitation power
  • temperature dependence
  • excitons

Cite this

Luckert, F., Yakushev, M. V., Faugeras, C., Karotki, A. V., Mudryi, A. V., & Martin, R. W. (2012). Excitation power and temperature dependence of excitons in CuInSe2. Journal of Applied Physics, 111(9), [093507]. https://doi.org/10.1063/1.4709448
Luckert, F. ; Yakushev, M. V. ; Faugeras, C. ; Karotki, A. V. ; Mudryi, A. V. ; Martin, R. W. / Excitation power and temperature dependence of excitons in CuInSe2. In: Journal of Applied Physics. 2012 ; Vol. 111, No. 9.
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Luckert, F, Yakushev, MV, Faugeras, C, Karotki, AV, Mudryi, AV & Martin, RW 2012, 'Excitation power and temperature dependence of excitons in CuInSe2' Journal of Applied Physics, vol. 111, no. 9, 093507. https://doi.org/10.1063/1.4709448

Excitation power and temperature dependence of excitons in CuInSe2. / Luckert, F.; Yakushev, M. V.; Faugeras, C.; Karotki, A. V.; Mudryi, A. V.; Martin, R. W.

In: Journal of Applied Physics, Vol. 111, No. 9, 093507, 01.05.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Excitation power and temperature dependence of excitons in CuInSe2

AU - Luckert, F.

AU - Yakushev, M. V.

AU - Faugeras, C.

AU - Karotki, A. V.

AU - Mudryi, A. V.

AU - Martin, R. W.

PY - 2012/5/1

Y1 - 2012/5/1

N2 - Excitonic recombination processes in high quality CuInSe2 single crystals have been studied by photoluminescence (PL) and reflectance spectroscopy as a function of excitation powers and temperature. Excitation power dependent measurements confirm the identification of well-resolved A and B free excitons in the PL spectra and analysis of the temperature quenching of these lines provides values for activation energies. These are found to vary from sample to sample, with values of 12.5 and 18.4meV for the A and B excitons, respectively, in the one showing the highest quality spectra. Analysis of the temperature and power dependent PL spectra from the bound excitonic lines, labelled M1, M2, and M3 appearing in multiplets points to a likely assignment of the hole involved in each case. The M1 excitons appear to involve a conduction band electron and a hole from the B valence band hole. In contrast, an A valence band hole appears to be involved for the M2 and M3 excitons. In addition, the M1 exciton multiplet seems to be due to the radiative recombination of excitons bound to shallow hydrogenic defects, whereas the excitons involved in M2 and M3 are bound to more complex defects. In contrast to the M1 exciton multiplet, the excitonic lines of M2 and M3 saturate at high excitation powers suggesting that the concentration of the defects involved is low. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709448]

AB - Excitonic recombination processes in high quality CuInSe2 single crystals have been studied by photoluminescence (PL) and reflectance spectroscopy as a function of excitation powers and temperature. Excitation power dependent measurements confirm the identification of well-resolved A and B free excitons in the PL spectra and analysis of the temperature quenching of these lines provides values for activation energies. These are found to vary from sample to sample, with values of 12.5 and 18.4meV for the A and B excitons, respectively, in the one showing the highest quality spectra. Analysis of the temperature and power dependent PL spectra from the bound excitonic lines, labelled M1, M2, and M3 appearing in multiplets points to a likely assignment of the hole involved in each case. The M1 excitons appear to involve a conduction band electron and a hole from the B valence band hole. In contrast, an A valence band hole appears to be involved for the M2 and M3 excitons. In addition, the M1 exciton multiplet seems to be due to the radiative recombination of excitons bound to shallow hydrogenic defects, whereas the excitons involved in M2 and M3 are bound to more complex defects. In contrast to the M1 exciton multiplet, the excitonic lines of M2 and M3 saturate at high excitation powers suggesting that the concentration of the defects involved is low. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709448]

KW - band-edge photoluminescence

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KW - CulnSe2

KW - luminescence

KW - emission

KW - defect physics

KW - radiative recombination

KW - chalcopyrite semiconductor

KW - single-crystals

KW - excitation power

KW - temperature dependence

KW - excitons

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DO - 10.1063/1.4709448

M3 - Article

VL - 111

JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

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