Evidence for H2* trapped by carbon impurities in silicon

B. Hourahine, R. Jones, S. Öberg, P.R. Briddon, V.P. Markevich, R.C. Newman, J. Hermansson, M. Kleverman, J.L. Lindstrom, L.I. Murin, N. Fukatah, M. Suezawa

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16 Citations (Scopus)

Abstract

Local mode spectroscopy and ab initio modelling are used to investigate two trigonal defects found in carbon-rich Si into which H had been in-diffused. Isotopic shifts with D and 13C are reported along with the effect of uniaxial stress. Ab initio modelling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si, respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed.
Original languageEnglish
Pages (from-to)197-201
Number of pages5
JournalPhysica B: Condensed Matter
Volume308-310
DOIs
Publication statusPublished - Dec 2001

Keywords

  • silicon
  • hydrogen
  • carbon
  • impurity complexes
  • absorption bands
  • nanoscience

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    Hourahine, B., Jones, R., Öberg, S., Briddon, P. R., Markevich, V. P., Newman, R. C., ... Suezawa, M. (2001). Evidence for H2* trapped by carbon impurities in silicon. Physica B: Condensed Matter, 308-310, 197-201. https://doi.org/10.1016/S0921-4526(01)00719-0