Evidence for H2* trapped by carbon impurities in silicon

B. Hourahine; R. Jones; S. Öberg; P.R. Briddon; V.P. Markevich; R.C. Newman; J. Hermansson; M. Kleverman; J.L. Lindstrom; L.I. Murin; N. Fukatah; M. Suezawa

doi:10.1016/S0921-4526(01)00719-0

Evidence for H2* trapped by carbon impurities in silicon

B. Hourahine, R. Jones, S. Öberg, P.R. Briddon, V.P. Markevich, R.C. Newman, J. Hermansson, M. Kleverman, J.L. Lindstrom, L.I. Murin, N. Fukatah, M. Suezawa

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Local mode spectroscopy and ab initio modelling are used to investigate two trigonal defects found in carbon-rich Si into which H had been in-diffused. Isotopic shifts with D and 13C are reported along with the effect of uniaxial stress. Ab initio modelling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si, respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed.

Original language	English
Pages (from-to)	197-201
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	308-310
DOIs	https://doi.org/10.1016/S0921-4526(01)00719-0
Publication status	Published - Dec 2001

Keywords

silicon
hydrogen
carbon
impurity complexes
absorption bands
nanoscience

Access to Document

10.1016/S0921-4526(01)00719-0

Cite this

@article{3f21ef0a83384d2c85e2855d4e3e3f40,

title = "Evidence for H2* trapped by carbon impurities in silicon",

abstract = "Local mode spectroscopy and ab initio modelling are used to investigate two trigonal defects found in carbon-rich Si into which H had been in-diffused. Isotopic shifts with D and 13C are reported along with the effect of uniaxial stress. Ab initio modelling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si, respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed.",

keywords = "silicon, hydrogen, carbon, impurity complexes, absorption bands, nanoscience",

author = "B. Hourahine and R. Jones and S. {\"O}berg and P.R. Briddon and V.P. Markevich and R.C. Newman and J. Hermansson and M. Kleverman and J.L. Lindstrom and L.I. Murin and N. Fukatah and M. Suezawa",

year = "2001",

month = dec,

doi = "10.1016/S0921-4526(01)00719-0",

language = "English",

volume = "308-310",

pages = "197--201",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

}

TY - JOUR

T1 - Evidence for H2* trapped by carbon impurities in silicon

AU - Hourahine, B.

AU - Jones, R.

AU - Öberg, S.

AU - Briddon, P.R.

AU - Markevich, V.P.

AU - Newman, R.C.

AU - Hermansson, J.

AU - Kleverman, M.

AU - Lindstrom, J.L.

AU - Murin, L.I.

AU - Fukatah, N.

AU - Suezawa, M.

PY - 2001/12

Y1 - 2001/12

N2 - Local mode spectroscopy and ab initio modelling are used to investigate two trigonal defects found in carbon-rich Si into which H had been in-diffused. Isotopic shifts with D and 13C are reported along with the effect of uniaxial stress. Ab initio modelling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si, respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed.

AB - Local mode spectroscopy and ab initio modelling are used to investigate two trigonal defects found in carbon-rich Si into which H had been in-diffused. Isotopic shifts with D and 13C are reported along with the effect of uniaxial stress. Ab initio modelling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si, respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed.

KW - silicon

KW - hydrogen

KW - carbon

KW - impurity complexes

KW - absorption bands

KW - nanoscience

UR - http://www.sciencedirect.com/science/journal/09214526

U2 - 10.1016/S0921-4526(01)00719-0

DO - 10.1016/S0921-4526(01)00719-0

M3 - Article

SN - 0921-4526

VL - 308-310

SP - 197

EP - 201

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Evidence for H2* trapped by carbon impurities in silicon

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this