Evidence for H2* trapped by carbon impurities in silicon

B. Hourahine, R. Jones, S. Öberg, P.R. Briddon, V.P. Markevich, R.C. Newman, J. Hermansson, M. Kleverman, J.L. Lindstrom, L.I. Murin, N. Fukatah, M. Suezawa

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Local mode spectroscopy and ab initio modelling are used to investigate two trigonal defects found in carbon-rich Si into which H had been in-diffused. Isotopic shifts with D and 13C are reported along with the effect of uniaxial stress. Ab initio modelling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si, respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed.
Original languageEnglish
Pages (from-to)197-201
Number of pages5
JournalPhysica B: Condensed Matter
Volume308-310
DOIs
Publication statusPublished - Dec 2001

Fingerprint

Silicon
Carbon
Impurities
impurities
Defects
carbon
defects
silicon
Hydrogen
vibration mode
hydrogen atoms
Spectroscopy
Atoms
shift
spectroscopy

Keywords

  • silicon
  • hydrogen
  • carbon
  • impurity complexes
  • absorption bands
  • nanoscience

Cite this

Hourahine, B., Jones, R., Öberg, S., Briddon, P. R., Markevich, V. P., Newman, R. C., ... Suezawa, M. (2001). Evidence for H2* trapped by carbon impurities in silicon. Physica B: Condensed Matter, 308-310, 197-201. https://doi.org/10.1016/S0921-4526(01)00719-0
Hourahine, B. ; Jones, R. ; Öberg, S. ; Briddon, P.R. ; Markevich, V.P. ; Newman, R.C. ; Hermansson, J. ; Kleverman, M. ; Lindstrom, J.L. ; Murin, L.I. ; Fukatah, N. ; Suezawa, M. / Evidence for H2* trapped by carbon impurities in silicon. In: Physica B: Condensed Matter. 2001 ; Vol. 308-310. pp. 197-201.
@article{3f21ef0a83384d2c85e2855d4e3e3f40,
title = "Evidence for H2* trapped by carbon impurities in silicon",
abstract = "Local mode spectroscopy and ab initio modelling are used to investigate two trigonal defects found in carbon-rich Si into which H had been in-diffused. Isotopic shifts with D and 13C are reported along with the effect of uniaxial stress. Ab initio modelling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si, respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed.",
keywords = "silicon, hydrogen, carbon, impurity complexes, absorption bands, nanoscience",
author = "B. Hourahine and R. Jones and S. {\"O}berg and P.R. Briddon and V.P. Markevich and R.C. Newman and J. Hermansson and M. Kleverman and J.L. Lindstrom and L.I. Murin and N. Fukatah and M. Suezawa",
year = "2001",
month = "12",
doi = "10.1016/S0921-4526(01)00719-0",
language = "English",
volume = "308-310",
pages = "197--201",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",

}

Hourahine, B, Jones, R, Öberg, S, Briddon, PR, Markevich, VP, Newman, RC, Hermansson, J, Kleverman, M, Lindstrom, JL, Murin, LI, Fukatah, N & Suezawa, M 2001, 'Evidence for H2* trapped by carbon impurities in silicon', Physica B: Condensed Matter, vol. 308-310, pp. 197-201. https://doi.org/10.1016/S0921-4526(01)00719-0

Evidence for H2* trapped by carbon impurities in silicon. / Hourahine, B.; Jones, R.; Öberg, S.; Briddon, P.R.; Markevich, V.P.; Newman, R.C.; Hermansson, J.; Kleverman, M.; Lindstrom, J.L.; Murin, L.I.; Fukatah, N.; Suezawa, M.

In: Physica B: Condensed Matter, Vol. 308-310, 12.2001, p. 197-201.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Evidence for H2* trapped by carbon impurities in silicon

AU - Hourahine, B.

AU - Jones, R.

AU - Öberg, S.

AU - Briddon, P.R.

AU - Markevich, V.P.

AU - Newman, R.C.

AU - Hermansson, J.

AU - Kleverman, M.

AU - Lindstrom, J.L.

AU - Murin, L.I.

AU - Fukatah, N.

AU - Suezawa, M.

PY - 2001/12

Y1 - 2001/12

N2 - Local mode spectroscopy and ab initio modelling are used to investigate two trigonal defects found in carbon-rich Si into which H had been in-diffused. Isotopic shifts with D and 13C are reported along with the effect of uniaxial stress. Ab initio modelling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si, respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed.

AB - Local mode spectroscopy and ab initio modelling are used to investigate two trigonal defects found in carbon-rich Si into which H had been in-diffused. Isotopic shifts with D and 13C are reported along with the effect of uniaxial stress. Ab initio modelling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si, respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed.

KW - silicon

KW - hydrogen

KW - carbon

KW - impurity complexes

KW - absorption bands

KW - nanoscience

UR - http://www.sciencedirect.com/science/journal/09214526

U2 - 10.1016/S0921-4526(01)00719-0

DO - 10.1016/S0921-4526(01)00719-0

M3 - Article

VL - 308-310

SP - 197

EP - 201

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -

Hourahine B, Jones R, Öberg S, Briddon PR, Markevich VP, Newman RC et al. Evidence for H2* trapped by carbon impurities in silicon. Physica B: Condensed Matter. 2001 Dec;308-310:197-201. https://doi.org/10.1016/S0921-4526(01)00719-0