Europium doping of zincblende GaN by ion implantation

K. Lorenz, I.S. Roqan, N. Franco, K.P. O'Donnell, V. Darakchieva, E. Alves, C. Trager-Cowan, R.W. Martin, D.J. As, M. Panfilova, Fundacao para a Ciencia e Tecnologia (FCT), Portugal (Funder), HOYA Corporation (Funder), German Science Foundation (DFG) (Funder)

Research output: Contribution to journalArticle

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Abstract

Eu was implanted into high quality cubic (zincblende) GaN (ZB-GaN) layers grown by molecular beam epitaxy. Detailed structural characterization before and after implantation was performed by x-ray diffraction (XRD) and Rutherford backscattering/channeling spectrometry. A low concentration (<10%) of wurtzite phase inclusions was observed by XRD analysis in as-grown samples with their (0001) planes aligned with the {111} planes of the cubic lattice. Implantation of Eu causes an expansion of the lattice parameter in the implanted region similar to that observed for the c-lattice parameter of wurtzite GaN (W-GaN). For ZB-GaN:Eu, a large fraction of Eu ions is found on a high symmetry interstitial site aligned with the < 110 > direction, while a Ga substitutional site is observed for W-GaN:Eu. The implantation damage in ZB-GaN:Eu could partly be removed by thermal annealing, but an increase in the wurtzite phase fraction was observed at the same time. Cathodoluminescence, photoluminescence (PL), and PL excitation spectroscopy revealed several emission lines which can be attributed to distinct Eu-related optical centers in ZB-GaN and W-GaN inclusions.
LanguageEnglish
Article number113507
Number of pages5
JournalJournal of Applied Physics
Volume105
Issue number11
DOIs
Publication statusPublished - 2 Jun 2009

Fingerprint

zincblende
europium
ion implantation
implantation
photoluminescence
cathodoluminescence
wurtzite
spectroscopy
low concentrations
backscattering
x ray diffraction
molecular beam epitaxy
inclusions
damage
annealing
excitation

Keywords

  • EU-doped gan
  • cubic gan
  • optical activiation
  • lattice location
  • photoluminescence
  • growth
  • films
  • spectroscopy
  • epilayers
  • epitaxy

Cite this

Lorenz, K., Roqan, I. S., Franco, N., O'Donnell, K. P., Darakchieva, V., Alves, E., ... German Science Foundation (DFG) (Funder) (2009). Europium doping of zincblende GaN by ion implantation. Journal of Applied Physics, 105(11), [113507]. https://doi.org/10.1063/1.3138806
Lorenz, K. ; Roqan, I.S. ; Franco, N. ; O'Donnell, K.P. ; Darakchieva, V. ; Alves, E. ; Trager-Cowan, C. ; Martin, R.W. ; As, D.J. ; Panfilova, M. ; Fundacao para a Ciencia e Tecnologia (FCT), Portugal (Funder) ; HOYA Corporation (Funder) ; German Science Foundation (DFG) (Funder). / Europium doping of zincblende GaN by ion implantation. In: Journal of Applied Physics. 2009 ; Vol. 105, No. 11.
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abstract = "Eu was implanted into high quality cubic (zincblende) GaN (ZB-GaN) layers grown by molecular beam epitaxy. Detailed structural characterization before and after implantation was performed by x-ray diffraction (XRD) and Rutherford backscattering/channeling spectrometry. A low concentration (<10{\%}) of wurtzite phase inclusions was observed by XRD analysis in as-grown samples with their (0001) planes aligned with the {111} planes of the cubic lattice. Implantation of Eu causes an expansion of the lattice parameter in the implanted region similar to that observed for the c-lattice parameter of wurtzite GaN (W-GaN). For ZB-GaN:Eu, a large fraction of Eu ions is found on a high symmetry interstitial site aligned with the < 110 > direction, while a Ga substitutional site is observed for W-GaN:Eu. The implantation damage in ZB-GaN:Eu could partly be removed by thermal annealing, but an increase in the wurtzite phase fraction was observed at the same time. Cathodoluminescence, photoluminescence (PL), and PL excitation spectroscopy revealed several emission lines which can be attributed to distinct Eu-related optical centers in ZB-GaN and W-GaN inclusions.",
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author = "K. Lorenz and I.S. Roqan and N. Franco and K.P. O'Donnell and V. Darakchieva and E. Alves and C. Trager-Cowan and R.W. Martin and D.J. As and M. Panfilova and {Fundacao para a Ciencia e Tecnologia (FCT), Portugal (Funder)} and {HOYA Corporation (Funder)} and {German Science Foundation (DFG) (Funder)}",
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Lorenz, K, Roqan, IS, Franco, N, O'Donnell, KP, Darakchieva, V, Alves, E, Trager-Cowan, C, Martin, RW, As, DJ, Panfilova, M, Fundacao para a Ciencia e Tecnologia (FCT), Portugal (Funder), HOYA Corporation (Funder) & German Science Foundation (DFG) (Funder) 2009, 'Europium doping of zincblende GaN by ion implantation' Journal of Applied Physics, vol. 105, no. 11, 113507. https://doi.org/10.1063/1.3138806

Europium doping of zincblende GaN by ion implantation. / Lorenz, K.; Roqan, I.S.; Franco, N.; O'Donnell, K.P.; Darakchieva, V.; Alves, E.; Trager-Cowan, C.; Martin, R.W.; As, D.J.; Panfilova, M.; Fundacao para a Ciencia e Tecnologia (FCT), Portugal (Funder); HOYA Corporation (Funder); German Science Foundation (DFG) (Funder).

In: Journal of Applied Physics, Vol. 105, No. 11, 113507, 02.06.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Europium doping of zincblende GaN by ion implantation

AU - Lorenz, K.

AU - Roqan, I.S.

AU - Franco, N.

AU - O'Donnell, K.P.

AU - Darakchieva, V.

AU - Alves, E.

AU - Trager-Cowan, C.

AU - Martin, R.W.

AU - As, D.J.

AU - Panfilova, M.

AU - Fundacao para a Ciencia e Tecnologia (FCT), Portugal (Funder)

AU - HOYA Corporation (Funder)

AU - German Science Foundation (DFG) (Funder)

PY - 2009/6/2

Y1 - 2009/6/2

N2 - Eu was implanted into high quality cubic (zincblende) GaN (ZB-GaN) layers grown by molecular beam epitaxy. Detailed structural characterization before and after implantation was performed by x-ray diffraction (XRD) and Rutherford backscattering/channeling spectrometry. A low concentration (<10%) of wurtzite phase inclusions was observed by XRD analysis in as-grown samples with their (0001) planes aligned with the {111} planes of the cubic lattice. Implantation of Eu causes an expansion of the lattice parameter in the implanted region similar to that observed for the c-lattice parameter of wurtzite GaN (W-GaN). For ZB-GaN:Eu, a large fraction of Eu ions is found on a high symmetry interstitial site aligned with the < 110 > direction, while a Ga substitutional site is observed for W-GaN:Eu. The implantation damage in ZB-GaN:Eu could partly be removed by thermal annealing, but an increase in the wurtzite phase fraction was observed at the same time. Cathodoluminescence, photoluminescence (PL), and PL excitation spectroscopy revealed several emission lines which can be attributed to distinct Eu-related optical centers in ZB-GaN and W-GaN inclusions.

AB - Eu was implanted into high quality cubic (zincblende) GaN (ZB-GaN) layers grown by molecular beam epitaxy. Detailed structural characterization before and after implantation was performed by x-ray diffraction (XRD) and Rutherford backscattering/channeling spectrometry. A low concentration (<10%) of wurtzite phase inclusions was observed by XRD analysis in as-grown samples with their (0001) planes aligned with the {111} planes of the cubic lattice. Implantation of Eu causes an expansion of the lattice parameter in the implanted region similar to that observed for the c-lattice parameter of wurtzite GaN (W-GaN). For ZB-GaN:Eu, a large fraction of Eu ions is found on a high symmetry interstitial site aligned with the < 110 > direction, while a Ga substitutional site is observed for W-GaN:Eu. The implantation damage in ZB-GaN:Eu could partly be removed by thermal annealing, but an increase in the wurtzite phase fraction was observed at the same time. Cathodoluminescence, photoluminescence (PL), and PL excitation spectroscopy revealed several emission lines which can be attributed to distinct Eu-related optical centers in ZB-GaN and W-GaN inclusions.

KW - EU-doped gan

KW - cubic gan

KW - optical activiation

KW - lattice location

KW - photoluminescence

KW - growth

KW - films

KW - spectroscopy

KW - epilayers

KW - epitaxy

U2 - 10.1063/1.3138806

DO - 10.1063/1.3138806

M3 - Article

VL - 105

JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 113507

ER -

Lorenz K, Roqan IS, Franco N, O'Donnell KP, Darakchieva V, Alves E et al. Europium doping of zincblende GaN by ion implantation. Journal of Applied Physics. 2009 Jun 2;105(11). 113507. https://doi.org/10.1063/1.3138806