Europium-doped GaN(Mg): beyond the limits of the light-emitting diode

K.P. O'Donnell, P.R. Edwards, M.J. Kappers, K. Lorenz, E.J. Alves, M.X. Boćkowski

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Rare-earth doped III-N semiconductors have been studied for decades on account of their possible application in visible light-emitting diodes (LED) with built-in utility as red (e.g. Eu), green (Er) and blue (Tm) monochromatic sources (O'Donnell and Dierolf (eds.), Topics in Applied Physics, Vol. 124 (Springer, Dordrecht, 2010) [1]). However, to date, no commercial devices have been introduced on the basis of these materials. Recently, we discovered thermally activated hysteresis in the emission spectrum of p-type GaN thin films that were co-doped with Mg and Eu (O'Donnell et al., Proc. ICPS31, Zurich, July 2012 [2]). We have also reported an unexpected Zeeman splitting and induced magnetic moment of Eu3+ ions in GaN (Kachkanov et al., Scientific Rep. 2, 969 (2012) and MRS Proc. 1290–i03–06 (2011) [3, 4]). These findings encourage speculation on taking the study of RE-doped III-N beyond the limited goal of improving LED efficiency into the realm of novel magneto-optic and quantum-optical devices. In particular we will describe in this presentation the spectroscopy of ion-implanted and annealed GaN(Mg): Eu samples and the possible exploitation of the Mg acceptor in GaN as a qubit.
Original languageEnglish
Pages (from-to)662–665
Number of pages4
JournalPhysica Status Solidi C
Issue number3-4
Early online date7 Feb 2014
Publication statusPublished - Apr 2014


  • GaN
  • rare earth doping
  • luminescence hysteresis
  • qubit

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