Eu-Mg defects and donor-acceptor pairs in GaN: photodissociation and the excitation transfer problem

A K Singh, K P O'Donnell, P R Edwards, K Lorenz, J H Leach, M Boćkowski

Research output: Contribution to journalArticle

  • 2 Citations

Abstract

We have investigated temperature-dependent photoluminescence (TDPL) profiles of Eu3+ ions implanted in an HVPE-grown bulk GaN sample doped with Mg and of donor-acceptor pairs (DAP) involving the shallow Mg acceptor in GaN(Mg) (unimplanted) and GaN(Mg):Eu samples. Below 125 K, the TDPL of Eu3+ in GaN(Mg):Eu correlates with that of the DAP. Below 75 K, the intensity of Eu3+ emission saturates, indicating a limitation of the numbers of Eu-Mg defects available to receive excitation transferred from the host, while the DAP continues to increase, albeit more slowly in the implanted than the unimplanted sample. Prolonged exposure to UV light at low temperature results in the photodissociation of Eu-Mg defects, in their Eu1(Mg) configuration, with a corresponding increase in shallow DAP emission and the emergence of emission from unassociated EuGa (Eu2) defects.
LanguageEnglish
Article number065106
Number of pages5
JournalJournal of Physics D: Applied Physics
Volume51
Issue number6
DOIs
StatePublished - 22 Jan 2018

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Photodissociation
photodissociation
Defects
defects
Photoluminescence
excitation
photoluminescence
Ultraviolet radiation
Temperature
Ions
temperature
profiles
configurations
ions

Keywords

  • temperature-dependent photoluminescence
  • photodissociation
  • donor–acceptor pairs

Cite this

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title = "Eu-Mg defects and donor-acceptor pairs in GaN: photodissociation and the excitation transfer problem",
abstract = "We have investigated temperature-dependent photoluminescence (TDPL) profiles of Eu3+ ions implanted in an HVPE-grown bulk GaN sample doped with Mg and of donor-acceptor pairs (DAP) involving the shallow Mg acceptor in GaN(Mg) (unimplanted) and GaN(Mg):Eu samples. Below 125 K, the TDPL of Eu3+ in GaN(Mg):Eu correlates with that of the DAP. Below 75 K, the intensity of Eu3+ emission saturates, indicating a limitation of the numbers of Eu-Mg defects available to receive excitation transferred from the host, while the DAP continues to increase, albeit more slowly in the implanted than the unimplanted sample. Prolonged exposure to UV light at low temperature results in the photodissociation of Eu-Mg defects, in their Eu1(Mg) configuration, with a corresponding increase in shallow DAP emission and the emergence of emission from unassociated EuGa (Eu2) defects.",
keywords = "temperature-dependent photoluminescence, photodissociation, donor–acceptor pairs",
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year = "2018",
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language = "English",
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Eu-Mg defects and donor-acceptor pairs in GaN : photodissociation and the excitation transfer problem. / Singh, A K ; O'Donnell, K P; Edwards, P R; Lorenz, K; Leach, J H; Boćkowski, M.

In: Journal of Physics D: Applied Physics, Vol. 51, No. 6, 065106, 22.01.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Eu-Mg defects and donor-acceptor pairs in GaN

T2 - Journal of Physics D: Applied Physics

AU - Singh,A K

AU - O'Donnell,K P

AU - Edwards,P R

AU - Lorenz,K

AU - Leach,J H

AU - Boćkowski,M

PY - 2018/1/22

Y1 - 2018/1/22

N2 - We have investigated temperature-dependent photoluminescence (TDPL) profiles of Eu3+ ions implanted in an HVPE-grown bulk GaN sample doped with Mg and of donor-acceptor pairs (DAP) involving the shallow Mg acceptor in GaN(Mg) (unimplanted) and GaN(Mg):Eu samples. Below 125 K, the TDPL of Eu3+ in GaN(Mg):Eu correlates with that of the DAP. Below 75 K, the intensity of Eu3+ emission saturates, indicating a limitation of the numbers of Eu-Mg defects available to receive excitation transferred from the host, while the DAP continues to increase, albeit more slowly in the implanted than the unimplanted sample. Prolonged exposure to UV light at low temperature results in the photodissociation of Eu-Mg defects, in their Eu1(Mg) configuration, with a corresponding increase in shallow DAP emission and the emergence of emission from unassociated EuGa (Eu2) defects.

AB - We have investigated temperature-dependent photoluminescence (TDPL) profiles of Eu3+ ions implanted in an HVPE-grown bulk GaN sample doped with Mg and of donor-acceptor pairs (DAP) involving the shallow Mg acceptor in GaN(Mg) (unimplanted) and GaN(Mg):Eu samples. Below 125 K, the TDPL of Eu3+ in GaN(Mg):Eu correlates with that of the DAP. Below 75 K, the intensity of Eu3+ emission saturates, indicating a limitation of the numbers of Eu-Mg defects available to receive excitation transferred from the host, while the DAP continues to increase, albeit more slowly in the implanted than the unimplanted sample. Prolonged exposure to UV light at low temperature results in the photodissociation of Eu-Mg defects, in their Eu1(Mg) configuration, with a corresponding increase in shallow DAP emission and the emergence of emission from unassociated EuGa (Eu2) defects.

KW - temperature-dependent photoluminescence

KW - photodissociation

KW - donor–acceptor pairs

UR - http://iopscience.iop.org/journal/0022-3727

U2 - 10.1088/1361-6463/aaa1cc

DO - 10.1088/1361-6463/aaa1cc

M3 - Article

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JO - Journal of Physics D: Applied Physics

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SN - 0022-3727

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