Etch end-point detection of GaN-based devices using optical emission spectroscopy

H.S. Kim, Y.J. Sung, D.W. Kim, T. Kim, M.D. Dawson, G.Y. Yeom

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES experiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A possibility of detecting etch end-point by OES was identified for both optoelectronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm).
LanguageEnglish
Pages159-162
Number of pages4
JournalMaterials Science and Engineering B
Volume82
Issue number1-3
DOIs
Publication statusPublished - 22 May 2001

Fingerprint

Optical emission spectroscopy
optical emission spectroscopy
Etching
etching
products
optoelectronic devices
Nitrides
Optoelectronic devices
nitrides
Heterojunctions
electronics
Experiments
aluminum gallium nitride

Keywords

  • etch end point detection (EPD)
  • OES
  • AlGaN/GaN
  • inductively-coupled cl-2/ar
  • cl-2/bcl3 plasmas
  • inp

Cite this

Kim, H.S. ; Sung, Y.J. ; Kim, D.W. ; Kim, T. ; Dawson, M.D. ; Yeom, G.Y. / Etch end-point detection of GaN-based devices using optical emission spectroscopy. In: Materials Science and Engineering B. 2001 ; Vol. 82, No. 1-3. pp. 159-162.
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Etch end-point detection of GaN-based devices using optical emission spectroscopy. / Kim, H.S.; Sung, Y.J.; Kim, D.W.; Kim, T.; Dawson, M.D.; Yeom, G.Y.

In: Materials Science and Engineering B, Vol. 82, No. 1-3, 22.05.2001, p. 159-162.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Etch end-point detection of GaN-based devices using optical emission spectroscopy

AU - Kim, H.S.

AU - Sung, Y.J.

AU - Kim, D.W.

AU - Kim, T.

AU - Dawson, M.D.

AU - Yeom, G.Y.

PY - 2001/5/22

Y1 - 2001/5/22

N2 - In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES experiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A possibility of detecting etch end-point by OES was identified for both optoelectronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm).

AB - In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES experiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A possibility of detecting etch end-point by OES was identified for both optoelectronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm).

KW - etch end point detection (EPD)

KW - OES

KW - AlGaN/GaN

KW - inductively-coupled cl-2/ar

KW - cl-2/bcl3 plasmas

KW - inp

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JO - Materials Science and Engineering B

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