In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES experiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A possibility of detecting etch end-point by OES was identified for both optoelectronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm).
- etch end point detection (EPD)
- inductively-coupled cl-2/ar
- cl-2/bcl3 plasmas
Kim, H. S., Sung, Y. J., Kim, D. W., Kim, T., Dawson, M. D., & Yeom, G. Y. (2001). Etch end-point detection of GaN-based devices using optical emission spectroscopy. Materials Science and Engineering B, 82(1-3), 159-162. https://doi.org/10.1016/S0921-5107(00)00798-4