Etch end-point detection of GaN-based devices using optical emission spectroscopy

H.S. Kim, Y.J. Sung, D.W. Kim, T. Kim, M.D. Dawson, G.Y. Yeom

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES experiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A possibility of detecting etch end-point by OES was identified for both optoelectronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm).
Original languageEnglish
Pages (from-to)159-162
Number of pages4
JournalMaterials Science and Engineering B
Volume82
Issue number1-3
DOIs
Publication statusPublished - 22 May 2001

Keywords

  • etch end point detection (EPD)
  • OES
  • AlGaN/GaN
  • inductively-coupled cl-2/ar
  • cl-2/bcl3 plasmas
  • inp

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