Etch end-point detection of GaN-based devices using optical emission spectroscopy

H.S. Kim; Y.J. Sung; D.W. Kim; T. Kim; M.D. Dawson; G.Y. Yeom

doi:10.1016/S0921-5107(00)00798-4

Etch end-point detection of GaN-based devices using optical emission spectroscopy

H.S. Kim, Y.J. Sung, D.W. Kim, T. Kim, M.D. Dawson, G.Y. Yeom

Institute Of Photonics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES experiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A possibility of detecting etch end-point by OES was identified for both optoelectronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm).

Original language	English
Pages (from-to)	159-162
Number of pages	4
Journal	Materials Science and Engineering B
Volume	82
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00798-4
Publication status	Published - 22 May 2001

Keywords

etch end point detection (EPD)
OES
AlGaN/GaN
inductively-coupled cl-2/ar
cl-2/bcl3 plasmas
inp

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10.1016/S0921-5107(00)00798-4

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title = "Etch end-point detection of GaN-based devices using optical emission spectroscopy",

abstract = "In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES experiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A possibility of detecting etch end-point by OES was identified for both optoelectronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm).",

keywords = "etch end point detection (EPD), OES, AlGaN/GaN, inductively-coupled cl-2/ar, cl-2/bcl3 plasmas, inp",

author = "H.S. Kim and Y.J. Sung and D.W. Kim and T. Kim and M.D. Dawson and G.Y. Yeom",

year = "2001",

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doi = "10.1016/S0921-5107(00)00798-4",

language = "English",

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pages = "159--162",

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TY - JOUR

T1 - Etch end-point detection of GaN-based devices using optical emission spectroscopy

AU - Kim, H.S.

AU - Sung, Y.J.

AU - Kim, D.W.

AU - Kim, T.

AU - Dawson, M.D.

AU - Yeom, G.Y.

PY - 2001/5/22

Y1 - 2001/5/22

N2 - In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES experiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A possibility of detecting etch end-point by OES was identified for both optoelectronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm).

AB - In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES experiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A possibility of detecting etch end-point by OES was identified for both optoelectronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm).

KW - etch end point detection (EPD)

KW - OES

KW - AlGaN/GaN

KW - inductively-coupled cl-2/ar

KW - cl-2/bcl3 plasmas

KW - inp

U2 - 10.1016/S0921-5107(00)00798-4

DO - 10.1016/S0921-5107(00)00798-4

M3 - Article

SN - 0921-5107

VL - 82

SP - 159

EP - 162

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1-3

ER -

Etch end-point detection of GaN-based devices using optical emission spectroscopy

Abstract

Keywords

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