Erratum: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))

S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, C. J. Deatcher

Research output: Contribution to journalComment/debate

7 Citations (Scopus)
Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume81
Issue number18
DOIs
Publication statusPublished - 28 Oct 2002

Keywords

  • semiconductor quantum wells
  • wurtzite InGaN/GaN layers

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