Erratum: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))

S. Pereira*, M. R. Correia, E. Pereira, K. P. O'Donnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, C. J. Deatcher

*Corresponding author for this work

Research output: Contribution to journalComment/debatepeer-review

7 Citations (Scopus)
Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume81
Issue number18
DOIs
Publication statusPublished - 28 Oct 2002

Keywords

  • semiconductor quantum wells
  • wurtzite InGaN/GaN layers

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