Erratum: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))

S. Pereira; M. R. Correia; E. Pereira; K. P. O'Donnell; E. Alves; A. D. Sequeira; N. Franco; I. M. Watson; C. J. Deatcher

doi:10.1063/1.1519670

Erratum: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))

S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, C. J. Deatcher

Research output: Contribution to journal › Comment/debate › peer-review

7 Citations (Scopus)

Original language	English
Number of pages	1
Journal	Applied Physics Letters
Volume	81
Issue number	18
DOIs	https://doi.org/10.1063/1.1519670
Publication status	Published - 28 Oct 2002

Keywords

semiconductor quantum wells
wurtzite InGaN/GaN layers

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10.1063/1.1519670

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@article{af92cf5d54b44e7094350602195329a3,

title = "Erratum: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))",

keywords = "semiconductor quantum wells, wurtzite InGaN/GaN layers",

author = "S. Pereira and Correia, {M. R.} and E. Pereira and O'Donnell, {K. P.} and E. Alves and Sequeira, {A. D.} and N. Franco and Watson, {I. M.} and Deatcher, {C. J.}",

year = "2002",

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doi = "10.1063/1.1519670",

language = "English",

volume = "81",

journal = "Applied Physics Letters",

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T2 - Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))

AU - Pereira, S.

AU - Correia, M. R.

AU - Pereira, E.

AU - O'Donnell, K. P.

AU - Alves, E.

AU - Sequeira, A. D.

AU - Franco, N.

AU - Watson, I. M.

AU - Deatcher, C. J.

PY - 2002/10/28

Y1 - 2002/10/28

KW - semiconductor quantum wells

KW - wurtzite InGaN/GaN layers

UR - http://www.scopus.com/inward/record.url?scp=79956014302&partnerID=8YFLogxK

U2 - 10.1063/1.1519670

DO - 10.1063/1.1519670

M3 - Comment/debate

AN - SCOPUS:79956014302

VL - 81

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -

Erratum: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))

Keywords

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