Erratum: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))

S. Pereira; M. R. Correia; E. Pereira; K. P. O'Donnell; E. Alves; A. D. Sequeira; N. Franco; I. M. Watson; C. J. Deatcher

doi:10.1063/1.1519670

Erratum: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))

S. Pereira^*, M. R. Correia, E. Pereira, K. P. O'Donnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, C. J. Deatcher

^*Corresponding author for this work

Research output: Contribution to journal › Comment/debate › peer-review

7 Citations (Scopus)

Original language	English
Number of pages	1
Journal	Applied Physics Letters
Volume	81
Issue number	18
DOIs	https://doi.org/10.1063/1.1519670
Publication status	Published - 28 Oct 2002

Keywords

semiconductor quantum wells
wurtzite InGaN/GaN layers

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10.1063/1.1519670

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@article{af92cf5d54b44e7094350602195329a3,

title = "Erratum: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))",

keywords = "semiconductor quantum wells, wurtzite InGaN/GaN layers",

author = "S. Pereira and Correia, {M. R.} and E. Pereira and O'Donnell, {K. P.} and E. Alves and Sequeira, {A. D.} and N. Franco and Watson, {I. M.} and Deatcher, {C. J.}",

year = "2002",

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language = "English",

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journal = "Applied Physics Letters",

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T2 - Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))

AU - Pereira, S.

AU - Correia, M. R.

AU - Pereira, E.

AU - O'Donnell, K. P.

AU - Alves, E.

AU - Sequeira, A. D.

AU - Franco, N.

AU - Watson, I. M.

AU - Deatcher, C. J.

PY - 2002/10/28

Y1 - 2002/10/28

KW - semiconductor quantum wells

KW - wurtzite InGaN/GaN layers

UR - http://www.scopus.com/inward/record.url?scp=79956014302&partnerID=8YFLogxK

U2 - 10.1063/1.1519670

DO - 10.1063/1.1519670

M3 - Comment/debate

AN - SCOPUS:79956014302

SN - 0003-6951

VL - 81

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Erratum: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))

Keywords

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