Erratum: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))

S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, C. J. Deatcher

Research output: Contribution to journalComment/debate

7 Citations (Scopus)
LanguageEnglish
Number of pages1
JournalApplied Physics Letters
Volume81
Issue number18
DOIs
Publication statusPublished - 28 Oct 2002

Keywords

  • semiconductor quantum wells
  • wurtzite InGaN/GaN layers

Cite this

@article{af92cf5d54b44e7094350602195329a3,
title = "Erratum: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913))",
keywords = "semiconductor quantum wells, wurtzite InGaN/GaN layers",
author = "S. Pereira and Correia, {M. R.} and E. Pereira and O'Donnell, {K. P.} and E. Alves and Sequeira, {A. D.} and N. Franco and Watson, {I. M.} and Deatcher, {C. J.}",
year = "2002",
month = "10",
day = "28",
doi = "10.1063/1.1519670",
language = "English",
volume = "81",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "18",

}

Erratum : Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (Appl. Phys. Lett. (2002) 80 (3913)). / Pereira, S.; Correia, M. R.; Pereira, E.; O'Donnell, K. P.; Alves, E.; Sequeira, A. D.; Franco, N.; Watson, I. M.; Deatcher, C. J.

In: Applied Physics Letters, Vol. 81, No. 18, 28.10.2002.

Research output: Contribution to journalComment/debate

TY - JOUR

T1 - Erratum

T2 - Applied Physics Letters

AU - Pereira, S.

AU - Correia, M. R.

AU - Pereira, E.

AU - O'Donnell, K. P.

AU - Alves, E.

AU - Sequeira, A. D.

AU - Franco, N.

AU - Watson, I. M.

AU - Deatcher, C. J.

PY - 2002/10/28

Y1 - 2002/10/28

KW - semiconductor quantum wells

KW - wurtzite InGaN/GaN layers

UR - http://www.scopus.com/inward/record.url?scp=79956014302&partnerID=8YFLogxK

U2 - 10.1063/1.1519670

DO - 10.1063/1.1519670

M3 - Comment/debate

VL - 81

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -