Equilibration and stability in undoped amorphous silicon

S. Wagner, Helena Gleskova, J. Nakata

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

The annealing of structure and defect density in silicon-implanted non-hydrogenated and hydrogenated amorphous silicon, a-Si and a-Si:H, is compared. In both materials, the annealing follows equilibrium-like trajectories of defect density versus Urbach energy. A comparison of implanted, as-grown, and light-soaked a-Si:H shows that these three materials are strained on an intermediate, extended, and local scale, respectively. Similar defect annealing rates in ion-implanted and light-soaked a-Si:H point to the same mechanism for relaxation, which most likely is associated with the diffusion of an atom or defect. Hydrogen is the most likely candidate, but more quantitative verification is needed.
Original languageEnglish
Pages (from-to)407-414
Number of pages8
JournalJournal of Non-Crystalline Solids
Volume198-200
DOIs
Publication statusPublished - 1996
Event16th International Conference on Amorphous Semiconductors - , United Kingdom
Duration: 28 Aug 1995 → 1 Sep 1995

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Amorphous silicon
amorphous silicon
Defect density
Annealing
defects
annealing
Defects
Silicon
Hydrogen
Trajectories
Ions
Atoms
trajectories
silicon
hydrogen
atoms
ions
energy

Keywords

  • amorphous silicon
  • equilibration
  • non-crystalline solids

Cite this

Wagner, S. ; Gleskova, Helena ; Nakata, J. / Equilibration and stability in undoped amorphous silicon. In: Journal of Non-Crystalline Solids. 1996 ; Vol. 198-200. pp. 407-414.
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Wagner, S, Gleskova, H & Nakata, J 1996, 'Equilibration and stability in undoped amorphous silicon', Journal of Non-Crystalline Solids, vol. 198-200, pp. 407-414. https://doi.org/10.1016/0022-3093(95)00702-4

Equilibration and stability in undoped amorphous silicon. / Wagner, S.; Gleskova, Helena; Nakata, J.

In: Journal of Non-Crystalline Solids, Vol. 198-200, 1996, p. 407-414.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Equilibration and stability in undoped amorphous silicon

AU - Wagner, S.

AU - Gleskova, Helena

AU - Nakata, J.

PY - 1996

Y1 - 1996

N2 - The annealing of structure and defect density in silicon-implanted non-hydrogenated and hydrogenated amorphous silicon, a-Si and a-Si:H, is compared. In both materials, the annealing follows equilibrium-like trajectories of defect density versus Urbach energy. A comparison of implanted, as-grown, and light-soaked a-Si:H shows that these three materials are strained on an intermediate, extended, and local scale, respectively. Similar defect annealing rates in ion-implanted and light-soaked a-Si:H point to the same mechanism for relaxation, which most likely is associated with the diffusion of an atom or defect. Hydrogen is the most likely candidate, but more quantitative verification is needed.

AB - The annealing of structure and defect density in silicon-implanted non-hydrogenated and hydrogenated amorphous silicon, a-Si and a-Si:H, is compared. In both materials, the annealing follows equilibrium-like trajectories of defect density versus Urbach energy. A comparison of implanted, as-grown, and light-soaked a-Si:H shows that these three materials are strained on an intermediate, extended, and local scale, respectively. Similar defect annealing rates in ion-implanted and light-soaked a-Si:H point to the same mechanism for relaxation, which most likely is associated with the diffusion of an atom or defect. Hydrogen is the most likely candidate, but more quantitative verification is needed.

KW - amorphous silicon

KW - equilibration

KW - non-crystalline solids

U2 - 10.1016/0022-3093(95)00702-4

DO - 10.1016/0022-3093(95)00702-4

M3 - Article

VL - 198-200

SP - 407

EP - 414

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

ER -

Wagner S, Gleskova H, Nakata J. Equilibration and stability in undoped amorphous silicon. Journal of Non-Crystalline Solids. 1996;198-200:407-414. https://doi.org/10.1016/0022-3093(95)00702-4

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