Equilibration and stability in undoped amorphous silicon

S. Wagner, Helena Gleskova, J. Nakata

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The annealing of structure and defect density in silicon-implanted non-hydrogenated and hydrogenated amorphous silicon, a-Si and a-Si:H, is compared. In both materials, the annealing follows equilibrium-like trajectories of defect density versus Urbach energy. A comparison of implanted, as-grown, and light-soaked a-Si:H shows that these three materials are strained on an intermediate, extended, and local scale, respectively. Similar defect annealing rates in ion-implanted and light-soaked a-Si:H point to the same mechanism for relaxation, which most likely is associated with the diffusion of an atom or defect. Hydrogen is the most likely candidate, but more quantitative verification is needed.
Original languageEnglish
Pages (from-to)407-414
Number of pages8
JournalJournal of Non-Crystalline Solids
Volume198-200
DOIs
Publication statusPublished - 1996
Event16th International Conference on Amorphous Semiconductors - , United Kingdom
Duration: 28 Aug 19951 Sep 1995

Keywords

  • amorphous silicon
  • equilibration
  • non-crystalline solids

Fingerprint Dive into the research topics of 'Equilibration and stability in undoped amorphous silicon'. Together they form a unique fingerprint.

Cite this