The annealing of structure and defect density in silicon-implanted non-hydrogenated and hydrogenated amorphous silicon, a-Si and a-Si:H, is compared. In both materials, the annealing follows equilibrium-like trajectories of defect density versus Urbach energy. A comparison of implanted, as-grown, and light-soaked a-Si:H shows that these three materials are strained on an intermediate, extended, and local scale, respectively. Similar defect annealing rates in ion-implanted and light-soaked a-Si:H point to the same mechanism for relaxation, which most likely is associated with the diffusion of an atom or defect. Hydrogen is the most likely candidate, but more quantitative verification is needed.
|Number of pages||8|
|Journal||Journal of Non-Crystalline Solids|
|Publication status||Published - 1996|
|Event||16th International Conference on Amorphous Semiconductors - , United Kingdom|
Duration: 28 Aug 1995 → 1 Sep 1995
- amorphous silicon
- non-crystalline solids