Abstract
| Language | English |
|---|---|
| Pages | 407-414 |
| Number of pages | 8 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 198-200 |
| DOIs | |
| Publication status | Published - 1996 |
| Event | 16th International Conference on Amorphous Semiconductors - , United Kingdom Duration: 28 Aug 1995 → 1 Sep 1995 |
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Keywords
- amorphous silicon
- equilibration
- non-crystalline solids
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Equilibration and stability in undoped amorphous silicon. / Wagner, S.; Gleskova, Helena; Nakata, J.
In: Journal of Non-Crystalline Solids, Vol. 198-200, 1996, p. 407-414.Research output: Contribution to journal › Article
TY - JOUR
T1 - Equilibration and stability in undoped amorphous silicon
AU - Wagner, S.
AU - Gleskova, Helena
AU - Nakata, J.
PY - 1996
Y1 - 1996
N2 - The annealing of structure and defect density in silicon-implanted non-hydrogenated and hydrogenated amorphous silicon, a-Si and a-Si:H, is compared. In both materials, the annealing follows equilibrium-like trajectories of defect density versus Urbach energy. A comparison of implanted, as-grown, and light-soaked a-Si:H shows that these three materials are strained on an intermediate, extended, and local scale, respectively. Similar defect annealing rates in ion-implanted and light-soaked a-Si:H point to the same mechanism for relaxation, which most likely is associated with the diffusion of an atom or defect. Hydrogen is the most likely candidate, but more quantitative verification is needed.
AB - The annealing of structure and defect density in silicon-implanted non-hydrogenated and hydrogenated amorphous silicon, a-Si and a-Si:H, is compared. In both materials, the annealing follows equilibrium-like trajectories of defect density versus Urbach energy. A comparison of implanted, as-grown, and light-soaked a-Si:H shows that these three materials are strained on an intermediate, extended, and local scale, respectively. Similar defect annealing rates in ion-implanted and light-soaked a-Si:H point to the same mechanism for relaxation, which most likely is associated with the diffusion of an atom or defect. Hydrogen is the most likely candidate, but more quantitative verification is needed.
KW - amorphous silicon
KW - equilibration
KW - non-crystalline solids
U2 - 10.1016/0022-3093(95)00702-4
DO - 10.1016/0022-3093(95)00702-4
M3 - Article
VL - 198-200
SP - 407
EP - 414
JO - Journal of Non-Crystalline Solids
T2 - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
ER -