Epitaxial growth of multiferroic YMnO3 on GaN

A. Posadas, J.-B. Yau, C. H. Ahn, J. Han, S. Gariglio, Karen Johnston, K. M. Rabe, J. B. Neaton

Research output: Contribution to journalArticle

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Abstract

n this work, we report on the epitaxialgrowth of multiferroic YMnO3 on GaN. Both materials are hexagonal with a nominal lattice mismatch of 4%, yet x-ray diffraction reveals an unexpected 30° rotation between the unit cells of YMnO3 and GaN that results in a much larger lattice mismatch (10%) compared to the unrotated case. Estimates based on first principles calculations show that the bonding energy gained from the rotated atomic arrangement compensates for the increase in strain energy due to the larger lattice mismatch. Understanding the energy competition between chemical bonding energy and strain energy provides insight into the heteroepitaxialgrowth mechanisms of complex oxide-semiconductor systems
LanguageEnglish
Article number171915
JournalApplied Physics Letters
Volume87
Early online date21 Oct 2005
DOIs
Publication statusPublished - 2005

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Lattice mismatch
Epitaxial growth
Strain energy
energy
Diffraction
X rays
x ray diffraction
oxides
estimates
cells

Keywords

  • epitaxial growth
  • YMnO3
  • GaN
  • multiferroic

Cite this

Posadas, A., Yau, J-B., Ahn, C. H., Han, J., Gariglio, S., Johnston, K., ... Neaton, J. B. (2005). Epitaxial growth of multiferroic YMnO3 on GaN. Applied Physics Letters, 87, [171915]. https://doi.org/10.1063/1.2120903
Posadas, A. ; Yau, J.-B. ; Ahn, C. H. ; Han, J. ; Gariglio, S. ; Johnston, Karen ; Rabe, K. M. ; Neaton, J. B. . / Epitaxial growth of multiferroic YMnO3 on GaN. In: Applied Physics Letters. 2005 ; Vol. 87.
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Posadas, A, Yau, J-B, Ahn, CH, Han, J, Gariglio, S, Johnston, K, Rabe, KM & Neaton, JB 2005, 'Epitaxial growth of multiferroic YMnO3 on GaN' Applied Physics Letters, vol. 87, 171915. https://doi.org/10.1063/1.2120903

Epitaxial growth of multiferroic YMnO3 on GaN. / Posadas, A.; Yau, J.-B.; Ahn, C. H.; Han, J.; Gariglio, S.; Johnston, Karen; Rabe, K. M. ; Neaton, J. B. .

In: Applied Physics Letters, Vol. 87, 171915, 2005.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Epitaxial growth of multiferroic YMnO3 on GaN

AU - Posadas, A.

AU - Yau, J.-B.

AU - Ahn, C. H.

AU - Han, J.

AU - Gariglio, S.

AU - Johnston, Karen

AU - Rabe, K. M.

AU - Neaton, J. B.

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AB - n this work, we report on the epitaxialgrowth of multiferroic YMnO3 on GaN. Both materials are hexagonal with a nominal lattice mismatch of 4%, yet x-ray diffraction reveals an unexpected 30° rotation between the unit cells of YMnO3 and GaN that results in a much larger lattice mismatch (10%) compared to the unrotated case. Estimates based on first principles calculations show that the bonding energy gained from the rotated atomic arrangement compensates for the increase in strain energy due to the larger lattice mismatch. Understanding the energy competition between chemical bonding energy and strain energy provides insight into the heteroepitaxialgrowth mechanisms of complex oxide-semiconductor systems

KW - epitaxial growth

KW - YMnO3

KW - GaN

KW - multiferroic

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