Epitaxial growth of multiferroic YMnO3 on GaN

A. Posadas, J.-B. Yau, C. H. Ahn, J. Han, S. Gariglio, Karen Johnston, K. M. Rabe, J. B. Neaton

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Abstract

n this work, we report on the epitaxialgrowth of multiferroic YMnO3 on GaN. Both materials are hexagonal with a nominal lattice mismatch of 4%, yet x-ray diffraction reveals an unexpected 30° rotation between the unit cells of YMnO3 and GaN that results in a much larger lattice mismatch (10%) compared to the unrotated case. Estimates based on first principles calculations show that the bonding energy gained from the rotated atomic arrangement compensates for the increase in strain energy due to the larger lattice mismatch. Understanding the energy competition between chemical bonding energy and strain energy provides insight into the heteroepitaxialgrowth mechanisms of complex oxide-semiconductor systems
Original languageEnglish
Article number171915
JournalApplied Physics Letters
Volume87
Early online date21 Oct 2005
DOIs
Publication statusPublished - 2005

Keywords

  • epitaxial growth
  • YMnO3
  • GaN
  • multiferroic

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    Posadas, A., Yau, J-B., Ahn, C. H., Han, J., Gariglio, S., Johnston, K., Rabe, K. M., & Neaton, J. B. (2005). Epitaxial growth of multiferroic YMnO3 on GaN. Applied Physics Letters, 87, [171915]. https://doi.org/10.1063/1.2120903