Energy scaling, second Stokes oscillation and Raman gain-guiding in monolithic diamond Raman lasers

Vasili G. Savitski, Giorgos Demetriou, Sean Reilly, Hangyu Liu, Erdan Gu, Martin D. Dawson, Alan J. Kemp

Research output: Contribution to journalArticle

Abstract

Energy scaling of the 1st Stokes oscillation is compared in micro-lensed and plane-plane monolithic diamond Raman lasers under 532 nm pumping. A maximum Raman pulse energy of 92 µJ at 573 nm was achieved with the micro-lensed device, while in a plane-plane configuration the maximum Raman pulse energy was 3.1 mJ. 2nd Stokes generation at 620 nm in 2 and 1 mm long micro-lensed monolithic diamond Raman lasers is also reported. The best conversion efficiency from the pump at 532 nm, namely 63 %, was observed in a 2 mm long crystal at the pump pulse intensity of 4.5 GW/cm2. By measuring the output Raman laser beam caustic it was found that the 2nd Stokes intracavity beam radius at the output coupler of the micro-lensed device is at least two times smaller than that expected from the ABCD matrix calculations of the resonator mode. A Raman gain-guiding mechanism is suggested to explain this difference.
LanguageEnglish
Pages1-8
Number of pages8
JournalIEEE Journal of Quantum Electronics
Early online date11 Oct 2018
DOIs
Publication statusE-pub ahead of print - 11 Oct 2018

Fingerprint

Raman lasers
Diamonds
diamonds
Pumps
scaling
Pumping (laser)
oscillations
Lasers
pulses
pumps
Conversion efficiency
Laser beams
Resonators
Laser pulses
output
Crystals
couplers
energy
alkalies
pumping

Keywords

  • diamond Raman lasers
  • Raman scattering
  • solid lasers

Cite this

@article{5e3752a62e7d4917b9af7705f0e67e02,
title = "Energy scaling, second Stokes oscillation and Raman gain-guiding in monolithic diamond Raman lasers",
abstract = "Energy scaling of the 1st Stokes oscillation is compared in micro-lensed and plane-plane monolithic diamond Raman lasers under 532 nm pumping. A maximum Raman pulse energy of 92 µJ at 573 nm was achieved with the micro-lensed device, while in a plane-plane configuration the maximum Raman pulse energy was 3.1 mJ. 2nd Stokes generation at 620 nm in 2 and 1 mm long micro-lensed monolithic diamond Raman lasers is also reported. The best conversion efficiency from the pump at 532 nm, namely 63 {\%}, was observed in a 2 mm long crystal at the pump pulse intensity of 4.5 GW/cm2. By measuring the output Raman laser beam caustic it was found that the 2nd Stokes intracavity beam radius at the output coupler of the micro-lensed device is at least two times smaller than that expected from the ABCD matrix calculations of the resonator mode. A Raman gain-guiding mechanism is suggested to explain this difference.",
keywords = "diamond Raman lasers, Raman scattering, solid lasers",
author = "Savitski, {Vasili G.} and Giorgos Demetriou and Sean Reilly and Hangyu Liu and Erdan Gu and Dawson, {Martin D.} and Kemp, {Alan J.}",
note = "{\circledC} 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.",
year = "2018",
month = "10",
day = "11",
doi = "10.1109/JQE.2018.2875561",
language = "English",
pages = "1--8",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",

}

TY - JOUR

T1 - Energy scaling, second Stokes oscillation and Raman gain-guiding in monolithic diamond Raman lasers

AU - Savitski, Vasili G.

AU - Demetriou, Giorgos

AU - Reilly, Sean

AU - Liu, Hangyu

AU - Gu, Erdan

AU - Dawson, Martin D.

AU - Kemp, Alan J.

N1 - © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2018/10/11

Y1 - 2018/10/11

N2 - Energy scaling of the 1st Stokes oscillation is compared in micro-lensed and plane-plane monolithic diamond Raman lasers under 532 nm pumping. A maximum Raman pulse energy of 92 µJ at 573 nm was achieved with the micro-lensed device, while in a plane-plane configuration the maximum Raman pulse energy was 3.1 mJ. 2nd Stokes generation at 620 nm in 2 and 1 mm long micro-lensed monolithic diamond Raman lasers is also reported. The best conversion efficiency from the pump at 532 nm, namely 63 %, was observed in a 2 mm long crystal at the pump pulse intensity of 4.5 GW/cm2. By measuring the output Raman laser beam caustic it was found that the 2nd Stokes intracavity beam radius at the output coupler of the micro-lensed device is at least two times smaller than that expected from the ABCD matrix calculations of the resonator mode. A Raman gain-guiding mechanism is suggested to explain this difference.

AB - Energy scaling of the 1st Stokes oscillation is compared in micro-lensed and plane-plane monolithic diamond Raman lasers under 532 nm pumping. A maximum Raman pulse energy of 92 µJ at 573 nm was achieved with the micro-lensed device, while in a plane-plane configuration the maximum Raman pulse energy was 3.1 mJ. 2nd Stokes generation at 620 nm in 2 and 1 mm long micro-lensed monolithic diamond Raman lasers is also reported. The best conversion efficiency from the pump at 532 nm, namely 63 %, was observed in a 2 mm long crystal at the pump pulse intensity of 4.5 GW/cm2. By measuring the output Raman laser beam caustic it was found that the 2nd Stokes intracavity beam radius at the output coupler of the micro-lensed device is at least two times smaller than that expected from the ABCD matrix calculations of the resonator mode. A Raman gain-guiding mechanism is suggested to explain this difference.

KW - diamond Raman lasers

KW - Raman scattering

KW - solid lasers

UR - https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=3

U2 - 10.1109/JQE.2018.2875561

DO - 10.1109/JQE.2018.2875561

M3 - Article

SP - 1

EP - 8

JO - IEEE Journal of Quantum Electronics

T2 - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

ER -