Emission dynamics of red emitting InGaN/GaN single quantum wells

F. Chen, A.N. Cartwright, C. Liu, I.M. Watson

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Emission dynamics of two InGaN/GaN single quantum well red emitters were investigated through time-resolved photoluminescence (PL) spectroscopy. A clear phase separation, where a higher energy (blue) emission and a lower energy (red) emission appear simultaneously, was observed. The maximum position of blue emission is consistent with the bandgap value of the InGaN quantum well. As the time after pulsed excitation increases, the higher energy emission decreased more rapidly than that of the lower energy emission. In addition, the temperature dependence of the peak position of lower energy emission showed an initial redshift followed by a blueshift, reflecting the thermal distribution and transfer of localized carriers within different potential minima.
Original languageEnglish
Pages (from-to)2787-2790
Number of pages3
JournalPhysica Status Solidi C
Volume2
Issue number7
DOIs
Publication statusPublished - 2005

Keywords

  • molecular-beam epitaxy
  • luminescence
  • excitons
  • alloys
  • diodes
  • band
  • blue

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