Emission dynamics of red emitting InGaN/GaN single quantum wells

F. Chen, A.N. Cartwright, C. Liu, I.M. Watson

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Emission dynamics of two InGaN/GaN single quantum well red emitters were investigated through time-resolved photoluminescence (PL) spectroscopy. A clear phase separation, where a higher energy (blue) emission and a lower energy (red) emission appear simultaneously, was observed. The maximum position of blue emission is consistent with the bandgap value of the InGaN quantum well. As the time after pulsed excitation increases, the higher energy emission decreased more rapidly than that of the lower energy emission. In addition, the temperature dependence of the peak position of lower energy emission showed an initial redshift followed by a blueshift, reflecting the thermal distribution and transfer of localized carriers within different potential minima.
LanguageEnglish
Pages2787-2790
Number of pages3
JournalPhysica Status Solidi C
Volume2
Issue number7
DOIs
Publication statusPublished - 2005

Fingerprint

quantum wells
energy
emitters
photoluminescence
temperature dependence
spectroscopy
excitation

Keywords

  • molecular-beam epitaxy
  • luminescence
  • excitons
  • alloys
  • diodes
  • band
  • blue

Cite this

Chen, F. ; Cartwright, A.N. ; Liu, C. ; Watson, I.M. / Emission dynamics of red emitting InGaN/GaN single quantum wells. In: Physica Status Solidi C. 2005 ; Vol. 2, No. 7. pp. 2787-2790.
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Emission dynamics of red emitting InGaN/GaN single quantum wells. / Chen, F.; Cartwright, A.N.; Liu, C.; Watson, I.M.

In: Physica Status Solidi C, Vol. 2, No. 7, 2005, p. 2787-2790.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Emission dynamics of red emitting InGaN/GaN single quantum wells

AU - Chen, F.

AU - Cartwright, A.N.

AU - Liu, C.

AU - Watson, I.M.

PY - 2005

Y1 - 2005

N2 - Emission dynamics of two InGaN/GaN single quantum well red emitters were investigated through time-resolved photoluminescence (PL) spectroscopy. A clear phase separation, where a higher energy (blue) emission and a lower energy (red) emission appear simultaneously, was observed. The maximum position of blue emission is consistent with the bandgap value of the InGaN quantum well. As the time after pulsed excitation increases, the higher energy emission decreased more rapidly than that of the lower energy emission. In addition, the temperature dependence of the peak position of lower energy emission showed an initial redshift followed by a blueshift, reflecting the thermal distribution and transfer of localized carriers within different potential minima.

AB - Emission dynamics of two InGaN/GaN single quantum well red emitters were investigated through time-resolved photoluminescence (PL) spectroscopy. A clear phase separation, where a higher energy (blue) emission and a lower energy (red) emission appear simultaneously, was observed. The maximum position of blue emission is consistent with the bandgap value of the InGaN quantum well. As the time after pulsed excitation increases, the higher energy emission decreased more rapidly than that of the lower energy emission. In addition, the temperature dependence of the peak position of lower energy emission showed an initial redshift followed by a blueshift, reflecting the thermal distribution and transfer of localized carriers within different potential minima.

KW - molecular-beam epitaxy

KW - luminescence

KW - excitons

KW - alloys

KW - diodes

KW - band

KW - blue

UR - http://dx.doi.org/10.1002/pssc.200461499

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DO - 10.1002/pssc.200461499

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JO - Physica Status Solidi C

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