Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor

Alessandro Borghesi, Mario Ettore Giardini, Marco Marazzi, Adele Sassella, Giorgio De Santi

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Abstract

The optical functions of amorphous and polycrystalline silicon thin films deposited on single oxidized silicon substrates by chemical vapor deposition in a wide range of deposition temperatures have been determined using spectroscopic ellipsometry. The data analysis is performed by direct inversion of the experimental spectra, therefore, obtaining results independent of any film modeling. The optical results indicate that the film structure changes as the deposition temperature increases from amorphous to polycrystalline with different grain size and distribution.
Original languageEnglish
Pages (from-to)892-894
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number7
DOIs
Publication statusPublished - 17 Feb 1997

Keywords

  • ellipsometric characterization
  • amorphous
  • polycrystalline silicon films
  • single wafer reactor
  • optical functions
  • single oxidizedsilicon substrates
  • deposition temperatures
  • spectroscopicellipsometry
  • silicon
  • polycrystals
  • thin films
  • amorphous semiconductors
  • thin film deposition

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