Electrostatic enhancement of light emitted by semiconductor quantum well

A. Krokhin, A. Neogi, A. Llopis, M. Mahat, L. Gumen, S. Pereira, I. Watson

Research output: Contribution to journalArticle

Abstract

Carrier dynamics in metal-semiconductor structures is driven by electrodynamic coupling of carriers to the evanescent field of surface plasmons. Useful modifications in electron and hole dynamics due to presence of metallic inclusions show promise for applications from light emitters to communications. However, this picture does not include contributions from electrostatics. We propose here an electrostatic mechanism for enhancement of light radiated from semiconductor emitter which is comparable in effect to plasmonic mechanism. Arising from Coulomb attraction of e-h pairs to their electrostatic images in metallic nanoparticles, this mechanism produces large carrier concentrations near the nanoparticle. A strong inhomogeneity in the carrier distribution and an increase in the internal quantum efficiency are predicted. In our experiments, this manifests as emission enhancement in InGaN quantum well (QW) radiating in the near-UV region. This fundamental mechanism provides a new perspective for improving the efficiency of broadband light emitters.

LanguageEnglish
Article number012014
Number of pages4
JournalJournal of Physics: Conference Series
Volume647
Issue number1
DOIs
Publication statusPublished - 13 Oct 2015

Fingerprint

quantum wells
electrostatics
emitters
augmentation
nanoparticles
plasmons
electrodynamics
attraction
quantum efficiency
inhomogeneity
communication
inclusions
broadband
metals
electrons

Keywords

  • electrostatic mechanism
  • broadband light emitters
  • metal-semiconductor structures

Cite this

Krokhin, A. ; Neogi, A. ; Llopis, A. ; Mahat, M. ; Gumen, L. ; Pereira, S. ; Watson, I. / Electrostatic enhancement of light emitted by semiconductor quantum well. In: Journal of Physics: Conference Series . 2015 ; Vol. 647, No. 1.
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Electrostatic enhancement of light emitted by semiconductor quantum well. / Krokhin, A.; Neogi, A.; Llopis, A.; Mahat, M.; Gumen, L.; Pereira, S.; Watson, I.

In: Journal of Physics: Conference Series , Vol. 647, No. 1, 012014, 13.10.2015.

Research output: Contribution to journalArticle

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AU - Krokhin, A.

AU - Neogi, A.

AU - Llopis, A.

AU - Mahat, M.

AU - Gumen, L.

AU - Pereira, S.

AU - Watson, I.

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AB - Carrier dynamics in metal-semiconductor structures is driven by electrodynamic coupling of carriers to the evanescent field of surface plasmons. Useful modifications in electron and hole dynamics due to presence of metallic inclusions show promise for applications from light emitters to communications. However, this picture does not include contributions from electrostatics. We propose here an electrostatic mechanism for enhancement of light radiated from semiconductor emitter which is comparable in effect to plasmonic mechanism. Arising from Coulomb attraction of e-h pairs to their electrostatic images in metallic nanoparticles, this mechanism produces large carrier concentrations near the nanoparticle. A strong inhomogeneity in the carrier distribution and an increase in the internal quantum efficiency are predicted. In our experiments, this manifests as emission enhancement in InGaN quantum well (QW) radiating in the near-UV region. This fundamental mechanism provides a new perspective for improving the efficiency of broadband light emitters.

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