Electrophotographically patterned thin-film silicon transistors

H. Gleskova; R. Könenkamp; S. Wagner; D. S. Shen

doi:10.1109/55.496452

Electrophotographically patterned thin-film silicon transistors

H. Gleskova^*, R. Könenkamp, S. Wagner, D. S. Shen

^*Corresponding author for this work

Electronic And Electrical Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The authors made amorphous silicon thin-film transistors on glass foil using exclusively electrophotographic printing for pattern formation, contact hole opening, and device isolation. Toner masks were applied by feeding the glass substrate through a photocopier, or from laser-printed patterns on transfer paper. This all-printed patterning is an important step toward demonstrating a low-cost large-area circuit processing technology.

Original language	English
Pages (from-to)	264-266
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	6
DOIs	https://doi.org/10.1109/55.496452
Publication status	Published - 1996

Keywords

thin-film silicon transistors
silicon transistors
electrophotographic printing

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10.1109/55.496452

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title = "Electrophotographically patterned thin-film silicon transistors",

abstract = "The authors made amorphous silicon thin-film transistors on glass foil using exclusively electrophotographic printing for pattern formation, contact hole opening, and device isolation. Toner masks were applied by feeding the glass substrate through a photocopier, or from laser-printed patterns on transfer paper. This all-printed patterning is an important step toward demonstrating a low-cost large-area circuit processing technology.",

keywords = "thin-film silicon transistors , silicon transistors , electrophotographic printing",

author = "H. Gleskova and R. K{\"o}nenkamp and S. Wagner and Shen, {D. S.}",

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AU - Gleskova, H.

AU - Könenkamp, R.

AU - Wagner, S.

AU - Shen, D. S.

PY - 1996

Y1 - 1996

N2 - The authors made amorphous silicon thin-film transistors on glass foil using exclusively electrophotographic printing for pattern formation, contact hole opening, and device isolation. Toner masks were applied by feeding the glass substrate through a photocopier, or from laser-printed patterns on transfer paper. This all-printed patterning is an important step toward demonstrating a low-cost large-area circuit processing technology.

AB - The authors made amorphous silicon thin-film transistors on glass foil using exclusively electrophotographic printing for pattern formation, contact hole opening, and device isolation. Toner masks were applied by feeding the glass substrate through a photocopier, or from laser-printed patterns on transfer paper. This all-printed patterning is an important step toward demonstrating a low-cost large-area circuit processing technology.

KW - thin-film silicon transistors

KW - silicon transistors

KW - electrophotographic printing

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U2 - 10.1109/55.496452

DO - 10.1109/55.496452

M3 - Article

AN - SCOPUS:0030170499

VL - 17

SP - 264

EP - 266

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

Electrophotographically patterned thin-film silicon transistors

Abstract

Keywords

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