Electrophotographically patterned thin-film silicon transistors

H. Gleskova, R. Könenkamp, S. Wagner, D. S. Shen

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The authors made amorphous silicon thin-film transistors on glass foil using exclusively electrophotographic printing for pattern formation, contact hole opening, and device isolation. Toner masks were applied by feeding the glass substrate through a photocopier, or from laser-printed patterns on transfer paper. This all-printed patterning is an important step toward demonstrating a low-cost large-area circuit processing technology.

LanguageEnglish
Pages264-266
Number of pages3
JournalIEEE Electron Device Letters
Volume17
Issue number6
DOIs
Publication statusPublished - 1996

Fingerprint

Silicon
Transistors
Glass
Thin films
Thin film transistors
Amorphous silicon
Metal foil
Printing
Masks
Networks (circuits)
Lasers
Substrates
Processing
Costs

Keywords

  • thin-film silicon transistors
  • silicon transistors
  • electrophotographic printing

Cite this

Gleskova, H. ; Könenkamp, R. ; Wagner, S. ; Shen, D. S. / Electrophotographically patterned thin-film silicon transistors. In: IEEE Electron Device Letters. 1996 ; Vol. 17, No. 6. pp. 264-266.
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Electrophotographically patterned thin-film silicon transistors. / Gleskova, H.; Könenkamp, R.; Wagner, S.; Shen, D. S.

In: IEEE Electron Device Letters, Vol. 17, No. 6, 1996, p. 264-266.

Research output: Contribution to journalArticle

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